Compensation for distortion in contact lithography
    5.
    发明授权
    Compensation for distortion in contact lithography 失效
    接触光刻中的失真补偿

    公开(公告)号:US07613538B2

    公开(公告)日:2009-11-03

    申请号:US11492365

    申请日:2006-07-24

    摘要: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

    摘要翻译: 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统,被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统,被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

    Compensation for distortion in contact lithography
    6.
    发明申请
    Compensation for distortion in contact lithography 失效
    接触光刻中的失真补偿

    公开(公告)号:US20080021587A1

    公开(公告)日:2008-01-24

    申请号:US11492365

    申请日:2006-07-24

    IPC分类号: G06F17/50 G06F19/00

    摘要: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

    摘要翻译: 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统,被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统,被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

    Memristive device
    10.
    发明授权
    Memristive device 有权
    忆阻器

    公开(公告)号:US08547727B2

    公开(公告)日:2013-10-01

    申请号:US13119932

    申请日:2008-12-12

    IPC分类号: G11C11/00

    摘要: A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.

    摘要翻译: 忆阻路由设备包括忆阻矩阵,响应于编程电场而与忆阻矩阵一起移动的移动掺杂物,并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件,其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域,然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。