Nanowire-based photodetectors
    1.
    发明申请
    Nanowire-based photodetectors 有权
    基于纳米线的光电探测器

    公开(公告)号:US20080310790A1

    公开(公告)日:2008-12-18

    申请号:US11699291

    申请日:2007-01-29

    IPC分类号: G02B6/12 G02B6/00

    摘要: Various embodiments of the present invention are directed to nanowire-based photodetectors that can be used to convert information encoded in a channel of electromagnetic radiation into a photocurrent encoding the same information. In one embodiment of the present invention, a photodetector comprises a waveguide configured to transmit one or more channels of electromagnetic radiation. The photodetector includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The photodetector also includes a number of nanowires. Each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is embedded in the waveguide.

    摘要翻译: 本发明的各种实施例涉及可用于将在电磁辐射通道中编码的信息转换成编码相同信息的光电流的基于纳米线的光电检测器。 在本发明的一个实施例中,光电检测器包括被配置为传输一个或多个电磁辐射通道的波导。 光电检测器包括第一端子和第二端子。 第一端子和第二端子位于波导的相对侧上。 光电检测器还包括许多纳米线。 每个纳米线将第一端子与第二端子互连,并且每个纳米线的一部分嵌入在波导中。

    Nanowire-based photodetectors
    2.
    发明授权
    Nanowire-based photodetectors 有权
    基于纳米线的光电探测器

    公开(公告)号:US07720326B2

    公开(公告)日:2010-05-18

    申请号:US11699291

    申请日:2007-01-29

    IPC分类号: G02B6/00 H01L31/02

    摘要: Various embodiments of the present invention are directed to nanowire-based photodetectors that can be used to convert information encoded in a channel of electromagnetic radiation into a photocurrent encoding the same information. In one embodiment of the present invention, a photodetector comprises a waveguide configured to transmit one or more channels of electromagnetic radiation. The photodetector includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The photodetector also includes a number of nanowires. Each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is embedded in the waveguide.

    摘要翻译: 本发明的各种实施例涉及可用于将在电磁辐射通道中编码的信息转换成编码相同信息的光电流的基于纳米线的光电检测器。 在本发明的一个实施例中,光电检测器包括被配置为传输一个或多个电磁辐射通道的波导。 光电检测器包括第一端子和第二端子。 第一端子和第二端子位于波导的相对侧上。 光电检测器还包括许多纳米线。 每个纳米线将第一端子与第二端子互连,并且每个纳米线的一部分嵌入在波导中。

    Nanowire-based modulators
    3.
    发明申请
    Nanowire-based modulators 有权
    基于纳米线的调制器

    公开(公告)号:US20080181551A1

    公开(公告)日:2008-07-31

    申请号:US11699092

    申请日:2007-01-29

    IPC分类号: G02B6/00

    CPC分类号: G02B6/12007 G02F1/025

    摘要: Various embodiments of the present invention are directed to nanowire-based modulators that can be used to encode information in a carrier channel of electromagnetic radiation. In one embodiment of the present invention, the modulator includes a waveguide configured to transmit one or more channels of electromagnetic radiation. The modulator includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The modulator also includes a number of nanowires, wherein each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is operatively coupled to the waveguide. The nanowires modulate the one or more channels when an electrical signal of appreciable magnitude is applied to the first terminal and the second terminal.

    摘要翻译: 本发明的各种实施例涉及可用于编码电磁辐射的载波信道中的信息的基于纳米线的调制器。 在本发明的一个实施例中,调制器包括配置成传输一个或多个电磁辐射通道的波导。 调制器包括第一端子和第二端子。 第一端子和第二端子位于波导的相对侧上。 调制器还包括多个纳米线,其中每个纳米线将第一端子与第二端子互连,并且每个纳米线的一部分可操作地耦合到波导。 当具有相当大幅度的电信号被施加到第一端子和第二端子时,纳米线调制一个或多个通道。

    Nanowire-based modulators
    4.
    发明授权
    Nanowire-based modulators 有权
    基于纳米线的调制器

    公开(公告)号:US07711213B2

    公开(公告)日:2010-05-04

    申请号:US11699092

    申请日:2007-01-29

    IPC分类号: G02B1/035 G02B1/01 G02B1/295

    CPC分类号: G02B6/12007 G02F1/025

    摘要: Various embodiments of the present invention are directed to nanowire-based modulators that can be used to encode information in a carrier channel of electromagnetic radiation. In one embodiment of the present invention, the modulator includes a waveguide configured to transmit one or more channels of electromagnetic radiation. The modulator includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The modulator also includes a number of nanowires, wherein each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is operatively coupled to the waveguide. The nanowires modulate the one or more channels when an electrical signal of appreciable magnitude is applied to the first terminal and the second terminal.

    摘要翻译: 本发明的各种实施例涉及可用于编码电磁辐射的载波信道中的信息的基于纳米线的调制器。 在本发明的一个实施例中,调制器包括配置成传输一个或多个电磁辐射通道的波导。 调制器包括第一端子和第二端子。 第一端子和第二端子位于波导的相对侧上。 调制器还包括多个纳米线,其中每个纳米线将第一端子与第二端子互连,并且每个纳米线的一部分可操作地耦合到波导。 当具有相当大幅度的电信号施加到第一端子和第二端子时,纳米线调制一个或多个通道。

    Integrated circuits having photonic interconnect layers and methods for fabricating same
    5.
    发明授权
    Integrated circuits having photonic interconnect layers and methods for fabricating same 有权
    具有光互连层的集成电路及其制造方法

    公开(公告)号:US07778501B2

    公开(公告)日:2010-08-17

    申请号:US11732549

    申请日:2007-04-03

    IPC分类号: G02B6/12

    摘要: Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer.

    摘要翻译: 本发明的各种实施例涉及具有光子互连层的集成电路和用于制造集成电路的方法。 在本发明的一个实施例中,集成电路包括电子器件层和一个或多个光子互连层。 电子器件层包括一个或多个电子器件,并且电子器件层附着到中间层的表面。 光子互连层中的一个附着到中间层的相对表面,并且每个光子互连层具有与电子器件层的至少一个电子器件通信的至少一个光子器件。

    Integrated circuits having photonic interconnect layers and methods for fabricating same
    6.
    发明申请
    Integrated circuits having photonic interconnect layers and methods for fabricating same 有权
    具有光互连层的集成电路及其制造方法

    公开(公告)号:US20080246106A1

    公开(公告)日:2008-10-09

    申请号:US11732549

    申请日:2007-04-03

    IPC分类号: H01L31/0232

    摘要: Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer.

    摘要翻译: 本发明的各种实施例涉及具有光子互连层的集成电路和用于制造集成电路的方法。 在本发明的一个实施例中,集成电路包括电子器件层和一个或多个光子互连层。 电子器件层包括一个或多个电子器件,并且电子器件层附着到中间层的表面。 光子互连层中的一个附着到中间层的相对表面,并且每个光子互连层具有与电子器件层的至少一个电子器件通信的至少一个光子器件。

    Method and structure for low stress oxide VCSEL
    8.
    发明申请
    Method and structure for low stress oxide VCSEL 审中-公开
    低应力氧化物VCSEL的方法和结构

    公开(公告)号:US20070091961A1

    公开(公告)日:2007-04-26

    申请号:US11246739

    申请日:2005-10-07

    IPC分类号: H01S5/00

    摘要: The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing the DBR oxide stress.

    摘要翻译: 横向氧化的VCSEL结构的蚀刻侧壁涂覆有电介质膜,以在氧化过程中抑制DBR层的氧化。 虽然DBR镜层的氧化没有完全消除,但是被氧化的DBR镜层的数量显着降低,从而减少DBR氧化物应力。