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1.发明授权公开(公告)号：US09276204B2
公开(公告)日：2016-03-01
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
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2.发明申请公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
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公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入 或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。
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公开(公告)号：US20130100726A1
公开(公告)日：2013-04-25
申请号：US13278581
申请日：2011-10-21
申请人： Wei Yi , Feng Miao , Jianhua Yang
发明人： Wei Yi , Feng Miao , Jianhua Yang
CPC分类号： G11C13/0069 , G11C11/56 , G11C11/5678 , G11C11/5685 , G11C13/00 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C27/005 , G11C29/50008 , G11C2013/0076 , G11C2013/0078 , G11C2013/0083 , G11C2013/009 , G11C2213/15
摘要： The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.
摘要翻译： 本公开提供了一种包括多级存储器单元的数据存储设备。 数据存储设备可以包括被配置为将数据写入多级存储器单元的电路。 写入电路可以包括被配置为实现连续可调切换的顺应性电路。 写入电路可以被配置为选择用于切换的顺应性模式，所述兼容性模式从包括当前顺应性和电压一致性的组中选择。
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公开(公告)号：US08830727B2
公开(公告)日：2014-09-09
申请号：US13278581
申请日：2011-10-21
申请人： Wei Yi , Feng Miao , Jianhua Yang
发明人： Wei Yi , Feng Miao , Jianhua Yang
CPC分类号： G11C13/0069 , G11C11/56 , G11C11/5678 , G11C11/5685 , G11C13/00 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C27/005 , G11C29/50008 , G11C2013/0076 , G11C2013/0078 , G11C2013/0083 , G11C2013/009 , G11C2213/15
摘要： The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.
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公开(公告)号：US09165645B2
公开(公告)日：2015-10-20
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。 在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道 费米玻璃材料。
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公开(公告)号：US08546785B2
公开(公告)日：2013-10-01
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US20110240951A1
公开(公告)日：2011-10-06
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US09257645B2
公开(公告)日：2016-02-09
申请号：US14232521
申请日：2011-07-14
申请人： Jianhua Yang , Minxian Max Zhang , Feng Miao
发明人： Jianhua Yang , Minxian Max Zhang , Feng Miao
CPC分类号： H01L45/1608 , G11C13/0007 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.
摘要翻译： 忆阻器包括第一电极; 第二电极; 以及介于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括用于在所述开关层中形成至少一个开关沟道的电半导体或标称绝缘和弱离子开关复合金属氧化物相。 还提供了形成忆阻器的方法。
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公开(公告)号：US20140167042A1
公开(公告)日：2014-06-19
申请号：US14232521
申请日：2011-07-14
申请人： Jianhua Yang , Minxian Max Zhang , Feng Miao
发明人： Jianhua Yang , Minxian Max Zhang , Feng Miao
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0007 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.
摘要翻译： 忆阻器包括第一电极; 第二电极; 以及介于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括用于在所述开关层中形成至少一个开关沟道的电半导体或标称绝缘和弱离子开关混合金属氧化物相。 还提供了形成忆阻器的方法。
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