公开(公告)号：US20070178249A1

公开(公告)日：2007-08-02

申请号：US11623815

申请日：2007-01-17

申请人： Min-Woo Song ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Ju-Youn Kim ,  Jung-Min Park

发明人： Min-Woo Song ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Ju-Youn Kim ,  Jung-Min Park

IPC分类号： H05H1/24

CPC分类号： C23C16/34 ,  C23C16/56

摘要： Provided is a method of forming a metal layer using metal-organic chemical vapor deposition (MOCVD). The method includes using MOCVD to form on a dielectric layer a metal layer having a first thickness, performing a first plasma process on the metal layer, using the MOCVD process to form a metal layer having a second thickness on the metal layer having the first thickness and performing a second plasma process on the metal layer having the second thickness, wherein the second plasma process has an energy level greater than the energy level of the first plasma process.

摘要翻译： 提供了使用金属有机化学气相沉积（MOCVD）形成金属层的方法。 该方法包括使用MOCVD在电介质层上形成具有第一厚度的金属层，在金属层上执行第一等离子体处理，使用MOCVD工艺在具有第一厚度的金属层上形成具有第二厚度的金属层 以及对具有所述第二厚度的所述金属层执行第二等离子体处理，其中所述第二等离子体工艺具有大于所述第一等离子体工艺的能级的能级。

公开(公告)号：US20070175495A1

公开(公告)日：2007-08-02

申请号：US11668805

申请日：2007-01-30

申请人： Weon-Hong Kim ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Min-Woo Song ,  Ju-Youn Kim ,  Jung-Min Park

发明人： Weon-Hong Kim ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Min-Woo Song ,  Ju-Youn Kim ,  Jung-Min Park

IPC分类号： B08B6/00 ,  C23F1/00 ,  C23C16/00

CPC分类号： C23C16/4405 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32458

摘要： An apparatus for treating plasma includes an inner chamber, an outer chamber receiving the inner chamber and including a gas supplier that supplies a gas into the inner chamber, an inner electrode disposed in the inner chamber, and a plasma generator supplying power independently to the inner electrode and the inner chamber.

摘要翻译： 一种用于处理等离子体的设备包括内室，外室，其接收内室，并且包括供应气体供给到内室中的气体供给器，设置在内室中的内电极和等离子发生器独立地向内供应电力 电极和内室。

公开(公告)号：US20070264821A1

公开(公告)日：2007-11-15

申请号：US11785305

申请日：2007-04-17

申请人： Ju-Youn Kim ,  Seok-Jun Won ,  Rak-Hwan Kim ,  Min-Woo Song ,  Weon-Hong Kim ,  Jung-Min Park

发明人： Ju-Youn Kim ,  Seok-Jun Won ,  Rak-Hwan Kim ,  Min-Woo Song ,  Weon-Hong Kim ,  Jung-Min Park

IPC分类号： H01L21/44

CPC分类号： H01L21/32051 ,  H01L28/75

摘要： A method of forming a semiconductor device may include forming a first conductive metal compound layer on a substrate using a metal organic chemical vapor deposition (MOCVD) process and/or forming a second conductive metal compound layer on the first conductive metal compound layer using a physical vapor deposition (PVD) process. The first and second conductive metal compound layers may be formed while reducing or preventing the exposure of the first conductive metal compound layer to oxygen atoms, thus reducing degradation of the first conductive metal compound layer.

摘要翻译： 形成半导体器件的方法可以包括：使用金属有机化学气相沉积（MOCVD）工艺在衬底上形成第一导电金属化合物层和/或在第一导电金属化合物层上形成第二导电金属化合物层，使用物理 气相沉积（PVD）工艺。 可以在减少或防止第一导电金属化合物层暴露于氧原子的同时形成第一和第二导电金属化合物层，从而减少第一导电金属化合物层的劣化。

公开(公告)号：US20070186857A1

公开(公告)日：2007-08-16

申请号：US11700785

申请日：2007-02-01

申请人： Ju-Youn Kim ,  Seok-Jun Won ,  Weon-Hong Kim

发明人： Ju-Youn Kim ,  Seok-Jun Won ,  Weon-Hong Kim

IPC分类号： B08B6/00 ,  C23C16/00

CPC分类号： C23C16/4405 ,  C23C16/45591

摘要： Example embodiments relate to an apparatus and method for manufacturing a semiconductor device. Other example embodiments relate to a plasma processing apparatus having an in-situ cleaning function and a method of using the same. The plasma processing apparatus may include an outer chamber, an inner chamber installed in the outer chamber, a gas supply unit for supplying a process gas or a cleaning gas into the inner chamber, an electrode positioned in the inner chamber, an electrode plasma power supply for applying power to the electrode, a first flexible member connecting the inner chamber and the outer chamber and having a first connector therein electrically connected to the inner chamber and/or a first chamber plasma power supply connected to the first connector and applying power to the inner chamber through the first connector.

摘要翻译： 示例实施例涉及用于制造半导体器件的装置和方法。 其他示例性实施例涉及具有原位清洁功能的等离子体处理设备及其使用方法。 等离子体处理装置可以包括外室，安装在外室的内室，用于向内室供给处理气体或清洁气体的气体供给单元，位于内室的电极，电极等离子体电源 用于向所述电极施加电力;第一柔性构件，其连接所述内室和所述外室，并且具有电连接到所述内室的第一连接器和/或连接到所述第一连接器的第一室等离子体电源， 内室通过第一连接器。

公开(公告)号：US20070166913A1

公开(公告)日：2007-07-19

申请号：US11606891

申请日：2006-12-01

申请人： Seok-Jun Won ,  Ju-Youn Kim ,  Weon-Hong Kim

发明人： Seok-Jun Won ,  Ju-Youn Kim ,  Weon-Hong Kim

IPC分类号： H01L21/8244

CPC分类号： H01L29/94 ,  C23C16/308 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45542 ,  H01L28/60

摘要： There is provided a method of forming a semiconductor device. A dielectric layer including a metal (e.g., a gate insulating layer and/or a tunnel insulating layer) may be formed on a substrate, and a metal nitride layer containing more metal component than nitrogen may be formed on the dielectric layer by PEALD. The metal nitride layer may be formed by alternately supplying a metal source including the metal and an NH3 gas, and providing plasma during a supplying of the NH3 gas. Because a material included in the dielectric layer and that included in the electrode formed thereon react with each other by a high temperature process, characteristics of the semiconductor device may be reduced or prevented from being degraded.

摘要翻译： 提供了形成半导体器件的方法。 可以在衬底上形成包括金属（例如，栅极绝缘层和/或隧道绝缘层）的电介质层，并且可以通过PEALD在电介质层上形成包含比氮更多的金属成分的金属氮化物层。 金属氮化物层可以通过交替地供给包括金属和NH 3气体的金属源来形成，并且在供给NH 3气体时提供等离子体。 由于包含在电介质层中并且包括在其中形成的电极中的材料通过高温处理彼此反应，所以可以降低或防止半导体器件的特性劣化。

公开(公告)号：US09553094B2

公开(公告)日：2017-01-24

申请号：US15069920

申请日：2016-03-14

申请人： Wei-Hsiung Tseng ,  Ju-Youn Kim ,  Seok-Jun Won ,  Jong-Ho Lee ,  Hye-Lan Lee ,  Yong-Ho Ha

发明人： Wei-Hsiung Tseng ,  Ju-Youn Kim ,  Seok-Jun Won ,  Jong-Ho Lee ,  Hye-Lan Lee ,  Yong-Ho Ha

IPC分类号： H01L27/092 ,  H01L29/49 ,  H01L29/43

CPC分类号： H01L27/0924 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L21/845 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/435 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6681 ,  H01L29/7848

摘要： Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽; 在第一沟槽中形成高k电介质层; 在高k电介质层上依次形成扩散层和阻挡层; 随后进行退火; 退火后，依次去除阻挡层和扩散层; 在高k电介质层上形成第一阻挡层; 在第一阻挡层上依次形成功函数调整层和栅极导体; 并在栅极导体上形成覆盖层。

公开(公告)号：US09287181B2

公开(公告)日：2016-03-15

申请号：US14592842

申请日：2015-01-08

申请人： Wei-Hsiung Tseng ,  Ju-Youn Kim ,  Seok-Jun Won ,  Jong-Ho Lee ,  Hye-Lan Lee ,  Yong-Ho Ha

发明人： Wei-Hsiung Tseng ,  Ju-Youn Kim ,  Seok-Jun Won ,  Jong-Ho Lee ,  Hye-Lan Lee ,  Yong-Ho Ha

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/165

CPC分类号： H01L27/0924 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L21/845 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/435 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6681 ,  H01L29/7848

摘要： Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽; 在第一沟槽中形成高k电介质层; 在高k电介质层上依次形成扩散层和阻挡层; 随后进行退火; 退火后，依次去除阻挡层和扩散层; 在高k电介质层上形成第一阻挡层; 在第一阻挡层上依次形成功函数调整层和栅极导体; 并在栅极导体上形成覆盖层。

公开(公告)号：US09721952B2

公开(公告)日：2017-08-01

申请号：US15077941

申请日：2016-03-23

申请人： Ju-Youn Kim ,  Kwang-You Seo

发明人： Ju-Youn Kim ,  Kwang-You Seo

IPC分类号： H01L21/76 ,  H01L29/78 ,  H01L21/28 ,  H01L21/33 ,  H01L21/82 ,  H01L29/51 ,  H01L27/092 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L27/092 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/82385 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/7856

摘要： A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

公开(公告)号：US20160204109A1

公开(公告)日：2016-07-14

申请号：US15077941

申请日：2016-03-23

申请人： Ju-Youn Kim ,  Kwang-You SEO

发明人： Ju-Youn Kim ,  Kwang-You SEO

IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L29/423

CPC分类号： H01L27/092 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/82385 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/7856

摘要： A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

公开(公告)号：US20140061814A1

公开(公告)日：2014-03-06

申请号：US13905715

申请日：2013-05-30

申请人： Ju-Youn Kim ,  Shigenobu Maeda ,  Bong-Seok Kim

发明人： Ju-Youn Kim ,  Shigenobu Maeda ,  Bong-Seok Kim

IPC分类号： H01L27/088 ,  H01L27/092

CPC分类号： H01L27/0883 ,  H01L21/823462 ,  H01L21/823857 ,  H01L22/14 ,  H01L22/20 ,  H01L27/092

摘要： A semiconductor device comprises: a semiconductor substrate comprising a first region and a second region; and first and second transistors on the first and second regions, respectively, wherein the first transistor comprises a first gate insulating layer pattern, the second transistor comprises a second gate insulating layer pattern, the first and second transistors both comprise a work function adjustment film pattern and a gate metal pattern, wherein the work function adjustment film pattern of the first transistor comprises the same material as the work function adjustment film pattern of the second transistor and the gate metal pattern of the first transistor comprises the same material as gate metal pattern of the second transistor, and a concentration of a metal contained in the first gate insulating layer pattern to adjust a threshold voltage of the first transistor is different from a concentration of the metal contained in the second gate insulating layer pattern to adjust a threshold voltage of the second transistor.

摘要翻译： 半导体器件包括：半导体衬底，包括第一区域和第二区域; 以及分别在第一和第二区域上的第一和第二晶体管，其中第一晶体管包括第一栅极绝缘层图案，第二晶体管包括第二栅极绝缘层图案，第一和第二晶体管都包括功函数调整膜图案 以及栅极金属图案，其中所述第一晶体管的功函数调整膜图案具有与所述第二晶体管的功函数调整膜图案相同的材料，并且所述第一晶体管的栅极金属图案包括与栅极金属图案相同的材料 所述第二晶体管和包含在所述第一栅极绝缘层图案中的金属的浓度以调节所述第一晶体管的阈值电压与所述第二栅极绝缘层图案中包含的金属的浓度不同，以调整所述第二晶体管的阈值电压 第二晶体管。