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公开(公告)号:US20230129628A1
公开(公告)日:2023-04-27
申请号:US17510212
申请日:2021-10-25
发明人: Simon Dong , Hope Chiu , Weiting Jiang , Elley Zhang , Kent Yang , Hua Tan , Jerry Tang , Rui Guo
IPC分类号: H01L23/552 , H01L23/00 , H01L23/538
摘要: A semiconductor device package includes a multi-layer substrate including a bottom layer and a top layer. One or more dies are mounted on and electrically coupled to the top layer of the substrate. An electromagnetic interference (EMI) shield encapsulates the substrate and the semiconductor dies. A first plurality of conductive stubs is positioned around edges of the top layer of the substrate. Each of the conductive stubs includes an edge portion having a first thickness and in contact with the EMI shield. A second plurality of conductive stubs is positioned around edges of the bottom layer of the substrate. Each of the second plurality of conductive stubs includes an edge portion having a second thickness less than the first thickness and in contact with the EMI shield.
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公开(公告)号:US20230102959A1
公开(公告)日:2023-03-30
申请号:US17490279
申请日:2021-09-30
发明人: Hope Chiu , Hua Tan , Kent Yang , Weiting Jiang , Jerry Tang , Simon Dong , Yuequan Shi , Rosy Zhao
摘要: A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.
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