摘要:
A radiation detecting system including a radiation detecting section having one or more radiation detecting circuits and a circuit adjustment section for adjusting other circuitry to be protected. Radiation detecting circuits are provided to detect a pulse of radiation and/or a total radiation dose accumulation.
摘要:
A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.
摘要:
A differential logic circuit (20, 120, 220, 320, 420 and 520) designed to ensure stability of the output of the circuit. The logic circuit includes a differential load structure (22, 122, 222, 322, 422) that is connected to evaluate transistors (50, 52, 54, 56). In several embodiments, the outputs of the load transistors (30, 32) in the differential load structure are connected to the bodies of the evaluate transistors. In the other embodiments, the outputs of the load transistors in the differential structure are connected to one of the gates of a double-gated evaluate transistors. Level-shifting output buffers (160, 178) are used in connection with the embodiments of the invention that do not include double-gated evaluate transistors.
摘要:
A multigated FET having reduced diffusion capacitance, self-compensating effective channel length, improved short channel effects control, and enhanced density. Forming the FET by providing a plurality of separated insulated gates on a substrate, including forming insulating material on at least four surfaces of each of the gates, forming a dielectric layer on the substrate between the insulated gates, depositing and planarizing a layer of conductive material on and between the insulated gates down to the insulating material on the top surface of the insulated gates, and implanting diffusion regions into the substrate, adjacent to and beneath a portion of two distal ones of the plurality of insulated gates.
摘要:
A circuit includes a resistance-capacitance (RC) structure connected to a first set of transistors and a second set of transistors that perform the same logical function as the first set of transistors. The first set of transistors have thinner gate oxides than the second set of transistors. The RC structure drains an electric field from the first set of transistors, such that the first set of transistors are on only during initial transistor switching. In other words, the RC structure turns off the first set of transistors after transistor switching is completed. Also, the first set of transistors and the second set of transistors share common inputs and outputs. The first set of transistors exhibit higher tunneling currents than the second set of transistors. The thinner gate oxides of the first set of transistors cause the first set of transistors to exhibit higher device currents than the second set of transistors. The RC structure includes a capacitor connected to a gate of the first set of transistors and a resistor connected to the capacitor and to ground.
摘要:
A circuit for selectively controlling the slew rate of a signal on a data line. A capacitor is connected at one end to a common terminal of a power supply and to a switching circuit. The switching circuit advantageously connects the capacitor to the data line in response to a control pulse, capacitively loading the data line so that slew rate is decreased. When the control pulse assumes a different state, the capacitor is connected by the switching circuit to a terminal of a power supply, and acts as a decoupling capacitor. The dual role of the capacitor provides for efficient circuit layout by utilizing one component in two functions.
摘要:
A semiconductor device and method of manufacturing is disclosed which has a tensile and/or compressive strain applied thereto. The method includes forming at least one trench in a material; and filling the at least one trench by an oxidation process thereby forming a strain concentration in a channel of a device. The structure includes a gate structure having a channel and a first oxidized trench on a first of the channel, respectively. The first oxidized trench creates a strain component in the channel to increase device performance.
摘要:
At least one conductive via structure is formed from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer to a bottom semiconductor layer. The shallow trench isolation structure laterally abuts at least two field effect transistors that function as a radio frequency (RF) switch. The at least one conductive via structure and the at interconnect-level metal line may provide a low resistance electrical path from the induced charge layer in a bottom semiconductor layer to electrical ground, discharging the electrical charge in the induced charge layer. The discharge of the charge in the induced charge layer thus reduces capacitive coupling between the semiconductor devices and the bottom semiconductor layer, and thus secondary coupling between components electrically disconnected by the RF switch is reduced.
摘要:
Manufacturing a semiconductor structure including: forming a seed material on an insulator layer; forming a graphene field effect transistor (FET) on the seed material; and forming an air gap under the graphene FET by removing the seed material.
摘要:
The disclosure relates generally to nano-filters and methods of forming same, and methods of filtration. The nano-filter includes a substrate and at least one nanowire structure located between an inlet and an outlet. The nanowire structure may include a plurality of vertically stacked horizontal nanowires.