Structured scintillator and systems employing structured scintillators
    1.
    发明申请
    Structured scintillator and systems employing structured scintillators 有权
    结构闪烁体和采用结构闪烁体的系统

    公开(公告)号:US20070164223A1

    公开(公告)日:2007-07-19

    申请号:US11334718

    申请日:2006-01-18

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.

    摘要翻译: 结构化闪烁体和采用结构闪烁体的检测系统。 更具体地,公开了一种包括具有多个隔离结构的闪烁体材料的结构闪烁体。 结构可以是圆锥形的。 该结构可以形成在基本上透明的材料层上,该层被图案化以形成多个隔离区域。 可以在隔离区域的顶部上形成结构以提供在其间具有间隔的隔离的闪烁体结构。 隔离区域和闪烁体结构可以与底层检测装置对准。

    Structured scintillator and systems employing structured scintillators
    2.
    发明授权
    Structured scintillator and systems employing structured scintillators 有权
    结构闪烁体和采用结构闪烁体的系统

    公开(公告)号:US07521685B2

    公开(公告)日:2009-04-21

    申请号:US11334718

    申请日:2006-01-18

    IPC分类号: G01T1/20 H01L27/148

    CPC分类号: G01T1/2018

    摘要: A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.

    摘要翻译: 结构化闪烁体和采用结构闪烁体的检测系统。 更具体地,公开了一种包括具有多个隔离结构的闪烁体材料的结构闪烁体。 结构可以是圆锥形的。 该结构可以形成在基本上透明的材料层上,该层被图案化以形成多个隔离区域。 可以在隔离区域的顶部上形成结构以提供在其间具有间隔的隔离的闪烁体结构。 隔离区域和闪烁体结构可以与底层检测装置对准。

    Thin-film transistor and diode array for an imager panel or the like
    3.
    发明申请
    Thin-film transistor and diode array for an imager panel or the like 有权
    用于成像器面板的薄膜晶体管和二极管阵列等

    公开(公告)号:US20070122948A1

    公开(公告)日:2007-05-31

    申请号:US11291602

    申请日:2005-11-30

    IPC分类号: H01L33/00 H01L21/84

    摘要: Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

    摘要翻译: 简而言之,根据一个或多个实施例,可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。 薄膜晶体管阵列可以具有形成的一个或多个通孔,用于增加光电二极管阵列与薄膜晶体管阵列的粘附。 通孔可以包括具有阶梯结构的侧壁。 薄膜晶体管阵列可以包括第一金属化层和第二金属化层。 第三金属化层可以添加到薄膜晶体管阵列中,其中光电二极管阵列的二极管可以接触第三金属化层。 光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。

    Storage capacitor design for a solid state imager
    4.
    发明申请
    Storage capacitor design for a solid state imager 有权
    存储电容设计为固态成像仪

    公开(公告)号:US20050078231A1

    公开(公告)日:2005-04-14

    申请号:US10687407

    申请日:2003-10-14

    CPC分类号: H01L27/14658

    摘要: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    摘要翻译: 存储电容设计为固态成像仪。 成像器包括以成像阵列图案设置在基板上的若干像素。 每个像素包括耦合到薄膜开关晶体管的光电传感器。 若干扫描线沿着第一轴相对于衬底设置在第一水平面上,并且几个数据线沿着成像阵列的第二轴线设置在第二水平处。 沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。 每个像素包括与光电传感器并联耦合的存储电容器,存储电容器包括存储电容器电极和电容器公共电极。

    DIRECT CSI SCINTILLATOR COATING FOR IMPROVED DIGITAL X-RAY DETECTOR ASSEMBLY LONGEVITY
    5.
    发明申请
    DIRECT CSI SCINTILLATOR COATING FOR IMPROVED DIGITAL X-RAY DETECTOR ASSEMBLY LONGEVITY 有权
    改进的数字X射线探测器的直接CSI扫描仪涂层组件长度

    公开(公告)号:US20050285045A1

    公开(公告)日:2005-12-29

    申请号:US10719117

    申请日:2003-11-21

    CPC分类号: G01T1/2928 G01T1/2002

    摘要: The present invention provides an X-ray detector assembly and a fabrication method, where the X-ray detector assembly comprises a scintillator material disposed on a detector matrix array disposed on a detector substrate; an encapsulating coating disposed on the scintillator material; a moisture resistant cover disposed over the detector substrate and the encapsulating coating, and an adhesive material disposed between the detector substrate and the moisture resistant cover so as to form a moisture vapor barrier. The adhesive material is disposed so that it is not in contact with the encapsulating coating. The fabrication method of the X-ray detector assembly includes the steps of disposing the encapsulating coating on the scintillator material and a portion of the detector substrate and removing the encapsulating coating from the portion of the detector substrate.

    摘要翻译: 本发明提供一种X射线检测器组件和制造方法,其中X射线检测器组件包括设置在设置在检测器基板上的检测器矩阵阵列上的闪烁体材料; 设置在闪烁体材料上的封装涂层; 设置在检测器基板和封装涂层之上的防潮盖,以及设置在检测器基板和防潮盖之间的粘合材料,以形成湿气阻挡层。 粘合剂材料被设置成使其不与封装涂层接触。 X射线检测器组件的制造方法包括以下步骤:将封装涂层设置在闪烁体材料和检测器基板的一部分上,并从检测器基板的部分移除封装涂层。

    Thin-film transistor and diode array for an imager panel or the like
    6.
    发明授权
    Thin-film transistor and diode array for an imager panel or the like 有权
    用于成像器面板的薄膜晶体管和二极管阵列等

    公开(公告)号:US07759680B2

    公开(公告)日:2010-07-20

    申请号:US11291602

    申请日:2005-11-30

    IPC分类号: H01L31/00

    摘要: Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

    摘要翻译: 简而言之,根据一个或多个实施例,可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。 薄膜晶体管阵列可以具有形成的一个或多个通孔,用于增加光电二极管阵列与薄膜晶体管阵列的粘附。 通孔可以包括具有阶梯结构的侧壁。 薄膜晶体管阵列可以包括第一金属化层和第二金属化层。 第三金属化层可以添加到薄膜晶体管阵列中,其中光电二极管阵列的二极管可以接触第三金属化层。 光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。

    Thin film transistor for imaging system
    7.
    发明申请
    Thin film transistor for imaging system 审中-公开
    用于成像系统的薄膜晶体管

    公开(公告)号:US20060131669A1

    公开(公告)日:2006-06-22

    申请号:US11021526

    申请日:2004-12-22

    IPC分类号: H01L31/062

    摘要: An annular thin film transistor includes an annular source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of the semiconductor material within the annular source electrode, and an active channel between the drain electrode and the annular source electrode, wherein a surface of the active channel comprises exposed semiconductor material. Further, a serpentine thin film transistor includes a serpentine source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of semiconductor material and substantially within a recess formed by the serpentine source electrode, wherein the drain electrode is configured to substantially conform to the recess, and an active channel between the drain electrode and the serpentine source electrode, wherein the active channel has a substantially consistent length, and wherein a surface of the active channel comprises exposed semiconductor material.

    摘要翻译: 环形薄膜晶体管包括设置在半导体材料层之上的环形源电极,设置在环形源极内的半导体材料层之上的漏电极以及漏电极和环形源电极之间的有源沟道, 其中所述有源沟道的表面包括暴露的半导体材料。 此外,蛇形薄膜晶体管包括设置在半导体材料层上方的蛇形源极电极,设置在半导体材料层上方并且基本上在由蛇形源极电极形成的凹部内的漏电极,其中漏电极被配置为 基本上符合凹部,以及在漏电极和蛇形源电极之间的有源沟道,其中有源沟道具有基本一致的长度,并且其中有源沟道的表面包括暴露的半导体材料。

    Photodiode for imaging system and method of making
    8.
    发明申请
    Photodiode for imaging system and method of making 有权
    用于成像系统的光电二极管及其制造方法

    公开(公告)号:US20060065843A1

    公开(公告)日:2006-03-30

    申请号:US10955295

    申请日:2004-09-30

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: A photo-detector having a common electrode comprising a conductive material configured in a non-solid pattern in which there are gaps where there is no conductive material. In one embodiment, the distance (d) or (d′) between conductive portions of the common electrode is in a range from about 3 microns to about 5 microns. Alternatively, in one embodiment, the patterned common electrode covers between 20% to 70% of the surface of the respective photosensor element. A method for making the same is also provided.

    摘要翻译: 一种具有公共电极的光检测器,其包括以非固体图案配置的导电材料,其中存在不存在导电材料的间隙。 在一个实施方案中,公共电极的导电部分之间的距离(d)或(d')在约3微米至约5微米的范围内。 或者,在一个实施例中,图案化的公共电极覆盖相应光电传感器元件的表面的20%至70%之间。 还提供了制造该方法的方法。

    EDDY CURRENT ARRAY PROBES WITH ENHANCED DRIVE FIELDS
    9.
    发明申请
    EDDY CURRENT ARRAY PROBES WITH ENHANCED DRIVE FIELDS 审中-公开
    EDDY电流阵列探头与增强型驱动器

    公开(公告)号:US20070222439A1

    公开(公告)日:2007-09-27

    申请号:US11759604

    申请日:2007-06-07

    IPC分类号: G01N27/90 G01N27/72

    CPC分类号: G01N27/902

    摘要: Several eddy current array probes (ECAP) with enhanced drive coil configurations are described. In one arrangement, an ECAP includes a number of EC channels and a number of drive coils. Each of the drive coils is provided for a respective one of the EC channels. The drive coils have alternating polarity with respect to neighboring drive coils. In another arrangement, an ECAP for detecting flaws in a number of scanning and orientation configurations includes at least one substrate, a number of sense coils arranged on the substrate(s), and a drive coil encompassing all of the sense coils. In another arrangement, an ECAP includes substrate, sense coils arranged in at least two rows, and at least one drive line. One drive line is provided for each pair of rows and disposed between the rows.

    摘要翻译: 描述了具有增强的驱动线圈配置的几个涡流阵列探针(ECAP)。 在一种布置中,ECAP包括多个EC通道和多个驱动线圈。 驱动线圈中的每一个为EC通道中的相应一个提供。 驱动线圈相对于相邻的驱动线圈具有交替的极性。 在另一种布置中,用于检测多个扫描和取向配置中的缺陷的ECAP包括至少一个基板,布置在基板上的多个感测线圈以及包围所有感测线圈的驱动线圈。 在另一种布置中,ECAP包括布置成至少两行的衬底,感测线圈和至少一个驱动线。 为每对行提供一条驱动线,并设置在行之间。

    Solid-state radiation imager with back-side irradiation
    10.
    发明申请
    Solid-state radiation imager with back-side irradiation 有权
    固体辐射成像仪具有背面照射

    公开(公告)号:US20050072931A1

    公开(公告)日:2005-04-07

    申请号:US10681767

    申请日:2003-10-06

    CPC分类号: G01T1/2018

    摘要: A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.

    摘要翻译: 具有背面照射的固态成像仪。 本发明提供了一种固态成像器,其包括适于接收入射辐射的基本上辐射透明的衬底。 辐射通过基片和像素化的感光元件阵列到闪烁体材料,其吸收辐射。 感光元件的像素化阵列接收光子,并测量与闪烁体材料的辐射相互作用产生的光量。 有了这个成像器,传播和模糊就越少,从而形象越好。 在另一个实施例中,存在设置在像素化的感光元件阵列和闪烁体材料之间的基本上透明的材料。 基本上透明的材料吸收并基本上阻挡电子进入感光元件的像素化阵列的有源区域。 这使得成像器能够根据其规格执行更长的时间。