摘要:
A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.
摘要:
A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.
摘要:
Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
摘要:
Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.
摘要:
The present invention provides an X-ray detector assembly and a fabrication method, where the X-ray detector assembly comprises a scintillator material disposed on a detector matrix array disposed on a detector substrate; an encapsulating coating disposed on the scintillator material; a moisture resistant cover disposed over the detector substrate and the encapsulating coating, and an adhesive material disposed between the detector substrate and the moisture resistant cover so as to form a moisture vapor barrier. The adhesive material is disposed so that it is not in contact with the encapsulating coating. The fabrication method of the X-ray detector assembly includes the steps of disposing the encapsulating coating on the scintillator material and a portion of the detector substrate and removing the encapsulating coating from the portion of the detector substrate.
摘要:
Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
摘要:
An annular thin film transistor includes an annular source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of the semiconductor material within the annular source electrode, and an active channel between the drain electrode and the annular source electrode, wherein a surface of the active channel comprises exposed semiconductor material. Further, a serpentine thin film transistor includes a serpentine source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of semiconductor material and substantially within a recess formed by the serpentine source electrode, wherein the drain electrode is configured to substantially conform to the recess, and an active channel between the drain electrode and the serpentine source electrode, wherein the active channel has a substantially consistent length, and wherein a surface of the active channel comprises exposed semiconductor material.
摘要:
A photo-detector having a common electrode comprising a conductive material configured in a non-solid pattern in which there are gaps where there is no conductive material. In one embodiment, the distance (d) or (d′) between conductive portions of the common electrode is in a range from about 3 microns to about 5 microns. Alternatively, in one embodiment, the patterned common electrode covers between 20% to 70% of the surface of the respective photosensor element. A method for making the same is also provided.
摘要:
Several eddy current array probes (ECAP) with enhanced drive coil configurations are described. In one arrangement, an ECAP includes a number of EC channels and a number of drive coils. Each of the drive coils is provided for a respective one of the EC channels. The drive coils have alternating polarity with respect to neighboring drive coils. In another arrangement, an ECAP for detecting flaws in a number of scanning and orientation configurations includes at least one substrate, a number of sense coils arranged on the substrate(s), and a drive coil encompassing all of the sense coils. In another arrangement, an ECAP includes substrate, sense coils arranged in at least two rows, and at least one drive line. One drive line is provided for each pair of rows and disposed between the rows.
摘要:
A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.