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公开(公告)号：US11631814B2
公开(公告)日：2023-04-18
申请号：US17376295
申请日：2021-07-15
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Katherine Rose Jinkins , Padma Gopalan
Abstract: Methods of forming films of aligned carbon nanotubes on a substrate surface are provided. The films are deposited from carbon nanotubes that have been concentrated and confined at a two-dimensional liquid/liquid interface. The liquid/liquid interface is formed by a dispersion of organic material-coated carbon nanotubes that flows over the surface of an immiscible liquid within a flow channel. Within the interface, the carbon nanotubes self-organize via liquid crystal phenomena and globally align along the liquid flow direction. By translating the interface across the substrate, large-area, wafer-scale films of aligned carbon nanotubes can be deposited on the surface of the substrate in a continuous and scalable process.
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公开(公告)号：US11618681B2
公开(公告)日：2023-04-04
申请号：US17360108
申请日：2021-06-28
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Austin James Way , Robert Michael Jacobberger
IPC: C01B32/186 , C30B29/54 , C30B29/02 , C30B29/60 , B82Y40/00
Abstract: Methods for the bottom-up growth of graphene nanoribbons are provided. The methods utilize small aromatic molecular seeds to initiate the anisotropic chemical vapor deposition (CVD) growth of graphene nanoribbons having low size polydispersities on the surface of a growth substrate. The aromatic molecular seeds include polycyclic aromatic hydrocarbons (PAHs), functionalized derivatives of PAHs, heterocyclic aromatic molecules, and metal complexes of heterocyclic aromatic molecules.
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公开(公告)号：US20220255001A1
公开(公告)日：2022-08-11
申请号：US17591711
申请日：2022-02-03
Applicant: Wisconsin Alumni Research Foundation
Inventor： Padma Gopalan , Jonathan H. Dwyer , Katherine Jinkins , Michael Scott Arnold
IPC: H01L51/00
Abstract: Methods for forming films of aligned carbon nanotubes are provided. Also provided are the films formed by the methods and electronic devices that incorporate the films as active layers. The films are formed by flowing a suspension of carbon nanotubes over a substrate surface that is chemically and topographically patterned. The methods provide a rapid and scalable means of forming films of densely packed and aligned carbon nanotubes over large surface areas.
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公开(公告)号：US09728734B2
公开(公告)日：2017-08-08
申请号：US15154170
申请日：2016-05-13
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Padma Gopalan , Gerald Joseph Brady , Yongho Joo
CPC classification number: H01L51/0558 , B82Y10/00 , B82Y40/00 , C01B32/159 , C01B32/16 , C01B32/166 , C01B32/168 , C01B2202/02 , C01B2202/08 , H01L51/0003 , H01L51/0048 , H01L51/0512
Abstract: High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
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公开(公告)号：US20170062229A1
公开(公告)日：2017-03-02
申请号：US15215016
申请日：2016-07-20
Inventor： Paul Franklin Nealey , Tzu-Hsuan Chang , Shisheng Xiong , Zhenqiang Ma , Michael Scott Arnold , Robert Jacobberger
IPC: H01L21/308 , H01J37/32 , C09D153/00 , C23C16/455
CPC classification number: G03F7/165 , B82Y30/00 , B82Y40/00 , C08K3/04 , C08L53/00 , C09D153/00 , C23C16/0227 , C23C16/26 , G03F7/0002 , G03F7/002 , G03F7/168 , H01J37/32009 , H01J2237/334 , H01L21/02527 , H01L21/02568 , H01L21/0271 , H01L21/3081 , H01L21/3086
Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
Abstract translation: 本文提供了关于原子层化学图案和相关组合物的定向自组装（DSA）的方法。 原子层化学图案可以由诸如石墨烯的二维材料形成。 原子层化学图案提供高分辨率，低缺陷指向的自组装。 例如，可以使用石墨烯图案上的DSA实现在三维图案（例如聚合物刷）上可实现的DSA的分辨率的十倍。 原子层化学图案上的嵌段共聚物的组装也可以促进随后的蚀刻，因为原子层化学图案比常规图案材料更容易蚀刻。
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Patent Agency Ranking
公开(公告)号：US20220411268A1
公开(公告)日：2022-12-29
申请号：US17360108
申请日：2021-06-28
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Austin James Way , Robert Michael Jacobberger
IPC: C01B32/186 , C30B29/54 , C30B29/02 , C30B29/60
Abstract: Methods for the bottom-up growth of graphene nanoribbons are provided. The methods utilize small aromatic molecular seeds to initiate the anisotropic chemical vapor deposition (CVD) growth of graphene nanoribbons having low size polydispersities on the surface of a growth substrate. The aromatic molecular seeds include polycyclic aromatic hydrocarbons (PAHs), functionalized derivatives of PAHs, heterocyclic aromatic molecules, and metal complexes of heterocyclic aromatic molecules.
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公开(公告)号：US20220306475A1
公开(公告)日：2022-09-29
申请号：US17209944
申请日：2021-03-23
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Robert Michael Jacobberger , Padma Gopalan , Jonathan H. Dwyer
IPC: C01B32/194 , C09D133/12
Abstract: Methods of transferring nanostructures from a first substrate to another substrate using a copolymer polymerized from one or more non-crosslinking monomers and one or more comonomers bearing crosslinkable groups as a transfer medium are provided. Relative to a poly(methyl methacrylate) homopolymer, the crosslinkable copolymers bond more strongly to the first substrate and, as a result, are able to transfer even very narrow nanostructures between substrates with high transfer yields.
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公开(公告)号：US09673399B2
公开(公告)日：2017-06-06
申请号：US15196325
申请日：2016-06-29
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Harold T. Evensen , Gerald Joseph Brady , Padma Gopalan , Yongho Joo
IPC: H01L51/00 , C01B31/02 , C09D11/52 , C09D11/106 , B05D1/18 , H01L29/06 , B05D1/20 , C09D11/037 , H01L51/05
CPC classification number: H01L51/0039 , B05D1/18 , B05D1/202 , C01B32/16 , C01B32/174 , C01B2202/02 , C09D11/037 , C09D11/106 , C09D11/52 , H01L51/0007 , H01L51/0043 , H01L51/0048 , H01L51/0558 , H01L51/0566
Abstract: High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is continuously supplied to the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
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公开(公告)号：US20170012228A1
公开(公告)日：2017-01-12
申请号：US15118058
申请日：2015-02-11
Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION
Inventor： Michael Scott Arnold , Padma Gopalan , Gerald Joseph Brady , Yongho Joo , Harold T. Evensen
CPC classification number: H01L51/0558 , C01B32/168 , C01B2202/02 , H01L51/0003 , H01L51/0039 , H01L51/0048 , H01L51/0049
Abstract: High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Abstract translation: 提供具有高度纳米管取向度的半导体单壁碳纳米管的高密度膜。 还提供了制造将膜和场效应晶体管（FET）合并为导电沟道材料的方法。 单壁碳纳米管是从含有溶解的单壁碳纳米管的薄层有机溶剂沉积的，该溶解的单壁碳纳米管分散在水性介质的表面上，在接触固体基质时引起蒸发自组装。
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公开(公告)号：US20160368773A1
公开(公告)日：2016-12-22
申请号：US15184036
申请日：2016-06-16
Applicant: Wisconsin Alumni Research Foundation
Inventor： Michael Scott Arnold , Padma Gopalan , Nathaniel S. Safron , Myungwoong Kim
IPC: C01B31/04
CPC classification number: C01B32/182 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/32 , Y10S977/734 , Y10S977/843 , Y10S977/932 , Y10T428/24802
Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.
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