摘要:
The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
摘要:
The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
摘要:
The present invention provides a micro thermoelectric gas sensor having a thermoelectric conversion section, a microheater, a catalyst layer formed on the microheater and to be heated by the microheater, which acts as a catalyst for catalytic combustion of a combustible gas, and a sensor detection section with an electrode pattern therefore formed on a membrane of a predetermined thickness, and a method for forming a micropattern of a functional material of a catalyst or resistor in a predetermined position on a substrate in a state in which the microstructure of the functional material remains controlled.
摘要:
The present invention provides a method of manufacturing a porous thick film of an oxide that has extremely few cracks and can be satisfactorily used as an oxygen partial pressure detecting part of an oxygen sensor. The present invention relates to a method of manufacturing such a porous thick film as an oxygen partial pressure detecting part of a resistive oxygen sensor comprising taking a fine particle powder of an oxide containing cerium oxide as a raw material powder, preparing a paste containing the oxide, printing the paste onto a substrate by screen printing, calcining and sintering, the method comprising a step of carrying out heat treatment to effect particle growth from the average particle diameter of the raw material powder to a particle diameter less than the average particle diameter of the ultimately obtained thick film, a step of mixing the particle growth-effected powder with a solvent, a step of dispersing agglomerated particles in the solvent, a step of removing a precipitate, a step of evaporating off the solvent, and a step of mixing the resulting oxide with an organic binder to obtain the paste.
摘要:
A resistance-type oxygen sensor which is provided to be used mainly for measuring the oxygen gas partial pressure of automobile exhaust gas, and which has a short output response time in response to changes in oxygen partial pressure, low resistivity of the oxide semiconductor, and low temperature dependence of the resistivity.In a resistance-type oxygen sensor, in which the oxygen gas detection part comprises an oxide semiconductor, the oxide semiconductor is an oxide comprising cerium ions and hafnium ions, the amount of substance of cerium ions as a percentage of the amount of substance of positive ions is 60 mol % or more, the amount of substance of hafnium ions as a percentage of the amount of substance of positive ions is 3 to 30 mol %, and the hafnium ions are an oxide in solid solution in the parent phase.
摘要:
A resistance-type oxygen sensor which is provided to be used mainly for measuring the oxygen gas partial pressure of automobile exhaust gas, and which has a short output response time in response to changes in oxygen partial pressure, low resistivity of the oxide semiconductor, and low temperature dependence of the resistivity. In a resistance-type oxygen sensor, in which the oxygen gas detection part comprises an oxide semiconductor, the oxide semiconductor is an oxide comprising cerium ions and hafnium ions, the amount of substance of cerium ions as a percentage of the amount of substance of positive ions is 60 mol % or more, the amount of substance of hafnium ions as a percentage of the amount of substance of positive ions is 3 to 30 mol %, and the hafnium ions are an oxide in solid solution in the parent phase.
摘要:
The present invention provides a resistance-type oxygen sensor, and an oxygen sensor device and an air/fuel ratio control system using same. The present invention relates to a resistance-type oxygen sensor with suppressed temperature dependence, wherein: (1) a gas detection unit composed of an oxide semiconductor with a resistance value varying according to temperature and the oxygen partial pressure of atmospheric gas and a temperature compensation unit composed of a conductor with suppressed dependence of a resistance value on oxygen partial pressure are connected in series; (2) the temperature compensation unit is composed of an oxygen ion conductor; and (3) an electrode for electric contact with the temperature compensation unit is exposed to the atmospheric gas and is a porous body; an oxygen sensor device and an air/fuel ratio control system.
摘要:
The present invention is to provide a process for producing a dispersion of fine core/shell type metal oxide particles and the dispersion thereby produced, the present invention are a process for producing a dispersion of fine core/shell type metal oxide particles comprising the steps of mixing a metal salt and a polymer in an organic solvent to obtain a mixture and heating this mixture under reflux at a prescribed temperature to precipitate metal oxide, wherein the metal salt is a nitrate salt or acetate salt and the particle diameter of the fine core/shell type metal oxide particles is adjusted using the molecular weight of the polymer, and a dispersion of fine core/shell type metal oxide particles obtained by the process, which does not undergo sedimentation even after standing for at least one day, and exhibits long-term stability, and a powder thereof.
摘要:
The present invention provides a resistance-type oxygen sensor, and an oxygen sensor device and an air/fuel ratio control system using same. The present invention relates to a resistance-type oxygen sensor with suppressed temperature dependence, wherein: (1) a gas detection unit composed of an oxide semiconductor with a resistance value varying according to temperature and the oxygen partial pressure of atmospheric gas and a temperature compensation unit composed of a conductor with suppressed dependence of a resistance value on oxygen partial pressure are connected in series; (2) the temperature compensation unit is composed of an oxygen ion conductor; and (3) an electrode for electric contact with the temperature compensation unit is exposed to the atmospheric gas and is a porous body; an oxygen sensor device and an air/fuel ratio control system.
摘要:
An object of the present invention is to provide a core-shell-type cerium oxide microparticle, a dispersion solution comprising the microparticle, and a process for production of the microparticle or dispersion solution, and to achieve the object, the present invention provides a core-shell-type cerium oxide microparticle which has an average particle diameter of 30 to 200 nm and a coefficient of variation therein no greater than 0.25, and in which the secondary particle forming the core portion is spherical in shape and a polymer is attached to its surface, a dispersion solution of this cerium oxide microparticle and a dry powder from the cerium oxide microparticle dispersion solution, and a process of producing a core-shell-type cerium oxide microparticle or a dispersion solution thereof, which comprises the steps of: mixing a cerium salt and a polymer in an organic solvent to obtain a mixture; and heating this mixture under reflux at a prescribed temperature to precipitate core-shell-type cerium oxide microparticles, wherein the cerium salt is cerium nitrate and the particle diameter of the microparticles is adjusted using the molecular weight of the polymer.