Thermoelectric transducing material thin film, sensor device, and its manufacturing method
    1.
    发明授权
    Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
    热电转换材料薄膜,传感器装置及其制造方法

    公开(公告)号:US07282384B2

    公开(公告)日:2007-10-16

    申请号:US10532825

    申请日:2003-11-11

    IPC分类号: H01L21/203 H01L35/34

    CPC分类号: H01L35/22 G01N27/16

    摘要: The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.

    摘要翻译: 本发明提供一种SiGe系薄膜,该薄膜的制造方法以及该薄膜的应用。 本发明涉及通过溅射制造SiGe系半导体薄膜,作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法, 局部温差成为电信号,其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法,其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜,其作为热电转换材料成分的一部分,该热电转换材料成分是其信号源是温差的传感器装置的组成元件,并将局部温差转换成 电信号,通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

    Thermoelectric transducing material thin film, sensor device, and its manufacturing method
    2.
    发明申请
    Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
    热电转换材料薄膜,传感器装置及其制造方法

    公开(公告)号:US20060063291A1

    公开(公告)日:2006-03-23

    申请号:US10532825

    申请日:2003-11-11

    IPC分类号: H01L21/363 H01L29/12

    CPC分类号: H01L35/22 G01N27/16

    摘要: The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.

    摘要翻译: 本发明提供一种SiGe系薄膜,该薄膜的制造方法以及该薄膜的应用。 本发明涉及通过溅射制造SiGe系半导体薄膜,作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法, 局部温差成为电信号,其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法,其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜,其作为热电转换材料成分的一部分,该热电转换材料成分是其信号源是温差的传感器装置的组成元件,并将局部温度差转换成 电信号,通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

    Micro Thermoelectric Type Gas Sensor
    3.
    发明申请
    Micro Thermoelectric Type Gas Sensor 审中-公开
    微型热电式气体传感器

    公开(公告)号:US20070212263A1

    公开(公告)日:2007-09-13

    申请号:US10593255

    申请日:2005-03-16

    IPC分类号: G01N27/16

    CPC分类号: G01N27/16

    摘要: The present invention provides a micro thermoelectric gas sensor having a thermoelectric conversion section, a microheater, a catalyst layer formed on the microheater and to be heated by the microheater, which acts as a catalyst for catalytic combustion of a combustible gas, and a sensor detection section with an electrode pattern therefore formed on a membrane of a predetermined thickness, and a method for forming a micropattern of a functional material of a catalyst or resistor in a predetermined position on a substrate in a state in which the microstructure of the functional material remains controlled.

    摘要翻译: 本发明提供一种具有热电转换部,微加热器,形成在微加热器上并被微加热器加热的催化剂层的微型热电气体传感器,其作为可燃气体的催化燃烧用催化剂,以及传感器检测 由此形成在预定厚度的膜上的电极图案的方法,以及在功能材料的微观结构保留的状态下在基板上的预定位置形成催化剂或电阻器的功能材料的微图案的方法 受控。

    Process for producing oxygen partial pressure detecting part of resistance oxygen sensor
    4.
    发明申请
    Process for producing oxygen partial pressure detecting part of resistance oxygen sensor 审中-公开
    电阻氧传感器氧分压检测部分生产工艺

    公开(公告)号:US20060057292A1

    公开(公告)日:2006-03-16

    申请号:US10540873

    申请日:2003-12-22

    IPC分类号: B05D3/02 C08J7/04

    CPC分类号: G01N27/125

    摘要: The present invention provides a method of manufacturing a porous thick film of an oxide that has extremely few cracks and can be satisfactorily used as an oxygen partial pressure detecting part of an oxygen sensor. The present invention relates to a method of manufacturing such a porous thick film as an oxygen partial pressure detecting part of a resistive oxygen sensor comprising taking a fine particle powder of an oxide containing cerium oxide as a raw material powder, preparing a paste containing the oxide, printing the paste onto a substrate by screen printing, calcining and sintering, the method comprising a step of carrying out heat treatment to effect particle growth from the average particle diameter of the raw material powder to a particle diameter less than the average particle diameter of the ultimately obtained thick film, a step of mixing the particle growth-effected powder with a solvent, a step of dispersing agglomerated particles in the solvent, a step of removing a precipitate, a step of evaporating off the solvent, and a step of mixing the resulting oxide with an organic binder to obtain the paste.

    摘要翻译: 本发明提供一种制造氧化物的多孔厚膜的方法,其具有极少的裂纹,可以令人满意地用作氧传感器的氧分压检测部。 本发明涉及一种电阻式氧传感器的氧分压检测部分的多孔厚膜的制造方法,其特征在于,将含有氧化铈的氧化物的微粒粉末作为原料粉末,制备含有氧化物 通过丝网印刷,煅烧和烧结将糊料印刷在基材上,该方法包括进行热处理以使颗粒生长从原料粉末的平均粒径到小于平均粒径的粒径的步骤 最终获得的厚膜,将颗粒生长粉末与溶剂混合的步骤,将附聚颗粒分散在溶剂中的步骤,除去沉淀物的步骤,蒸发溶剂的步骤和混合步骤 得到的氧化物与有机粘合剂得到糊状物。

    Resistive type oxygen sensor and air/fuel ratio control system using it
    5.
    发明授权
    Resistive type oxygen sensor and air/fuel ratio control system using it 有权
    电阻式氧传感器和空/燃比控制系统使用它

    公开(公告)号:US07578974B2

    公开(公告)日:2009-08-25

    申请号:US11252721

    申请日:2005-10-19

    IPC分类号: G01N30/96

    CPC分类号: G01N27/125

    摘要: A resistance-type oxygen sensor which is provided to be used mainly for measuring the oxygen gas partial pressure of automobile exhaust gas, and which has a short output response time in response to changes in oxygen partial pressure, low resistivity of the oxide semiconductor, and low temperature dependence of the resistivity.In a resistance-type oxygen sensor, in which the oxygen gas detection part comprises an oxide semiconductor, the oxide semiconductor is an oxide comprising cerium ions and hafnium ions, the amount of substance of cerium ions as a percentage of the amount of substance of positive ions is 60 mol % or more, the amount of substance of hafnium ions as a percentage of the amount of substance of positive ions is 3 to 30 mol %, and the hafnium ions are an oxide in solid solution in the parent phase.

    摘要翻译: 一种电阻型氧传感器,其主要用于测量汽车废气的氧气分压,并且响应于氧分压的变化,氧化物半导体的低电阻率而具有短的输出响应时间,以及 电阻率的低温依赖性。 在其中氧气检测部分包含氧化物半导体的电阻型氧传感器中,氧化物半导体是包含铈离子和铪离子的氧化物,铈离子的物质的量作为阳性物质的量的百分比 离子为60摩尔%以上,作为正离子的物质的量的百分比,铪离子的含量为3〜30摩尔%,铪离子为母相的固溶体中的氧化物。

    Resistive type oxygen sensor and air/fuel ratio control system using it

    公开(公告)号:US20060081473A1

    公开(公告)日:2006-04-20

    申请号:US11252721

    申请日:2005-10-19

    IPC分类号: G01N27/26

    CPC分类号: G01N27/125

    摘要: A resistance-type oxygen sensor which is provided to be used mainly for measuring the oxygen gas partial pressure of automobile exhaust gas, and which has a short output response time in response to changes in oxygen partial pressure, low resistivity of the oxide semiconductor, and low temperature dependence of the resistivity. In a resistance-type oxygen sensor, in which the oxygen gas detection part comprises an oxide semiconductor, the oxide semiconductor is an oxide comprising cerium ions and hafnium ions, the amount of substance of cerium ions as a percentage of the amount of substance of positive ions is 60 mol % or more, the amount of substance of hafnium ions as a percentage of the amount of substance of positive ions is 3 to 30 mol %, and the hafnium ions are an oxide in solid solution in the parent phase.

    Resistance type oxygen sensor and oxygen sensor device using it and air/fuel ratio control system
    7.
    发明申请
    Resistance type oxygen sensor and oxygen sensor device using it and air/fuel ratio control system 有权
    电阻式氧气传感器和氧传感器装置使用它和空/燃比控制系统

    公开(公告)号:US20050236271A1

    公开(公告)日:2005-10-27

    申请号:US10517771

    申请日:2003-06-25

    IPC分类号: G01N27/12 G01N27/26

    CPC分类号: G01N27/12

    摘要: The present invention provides a resistance-type oxygen sensor, and an oxygen sensor device and an air/fuel ratio control system using same. The present invention relates to a resistance-type oxygen sensor with suppressed temperature dependence, wherein: (1) a gas detection unit composed of an oxide semiconductor with a resistance value varying according to temperature and the oxygen partial pressure of atmospheric gas and a temperature compensation unit composed of a conductor with suppressed dependence of a resistance value on oxygen partial pressure are connected in series; (2) the temperature compensation unit is composed of an oxygen ion conductor; and (3) an electrode for electric contact with the temperature compensation unit is exposed to the atmospheric gas and is a porous body; an oxygen sensor device and an air/fuel ratio control system.

    摘要翻译: 本发明提供一种电阻型氧传感器,以及氧传感器装置和使用该氧传感器装置的空/燃比控制系统。 本发明涉及一种具有抑制温度依赖性的电阻型氧传感器,其中:(1)气体检测单元,其由具有根据温度变化的电阻值和大气气体的氧分压的温度补偿 由具有抑制的电阻值对氧分压的依赖性的导体构成的单元串联连接; (2)温度补偿单元由氧离子导体构成; 和(3)与温度补偿单元电接触的电极暴露于大气中,是多孔体; 氧传感器装置和空/燃比控制系统。

    Resistance type oxygen sensor and oxygen sensor device using it and air/fuel ratio control system
    9.
    发明授权
    Resistance type oxygen sensor and oxygen sensor device using it and air/fuel ratio control system 有权
    电阻式氧气传感器和氧传感器装置使用它和空/燃比控制系统

    公开(公告)号:US07236083B2

    公开(公告)日:2007-06-26

    申请号:US10517771

    申请日:2003-06-25

    IPC分类号: H01C7/00

    CPC分类号: G01N27/12

    摘要: The present invention provides a resistance-type oxygen sensor, and an oxygen sensor device and an air/fuel ratio control system using same. The present invention relates to a resistance-type oxygen sensor with suppressed temperature dependence, wherein: (1) a gas detection unit composed of an oxide semiconductor with a resistance value varying according to temperature and the oxygen partial pressure of atmospheric gas and a temperature compensation unit composed of a conductor with suppressed dependence of a resistance value on oxygen partial pressure are connected in series; (2) the temperature compensation unit is composed of an oxygen ion conductor; and (3) an electrode for electric contact with the temperature compensation unit is exposed to the atmospheric gas and is a porous body; an oxygen sensor device and an air/fuel ratio control system.

    摘要翻译: 本发明提供一种电阻型氧传感器,以及氧传感器装置和使用该氧传感器装置的空/燃比控制系统。 本发明涉及一种具有抑制温度依赖性的电阻型氧传感器,其中:(1)气体检测单元,其由具有根据温度变化的电阻值和大气气体的氧分压的温度补偿 由具有抑制的电阻值对氧分压的依赖性的导体构成的单元串联连接; (2)温度补偿单元由氧离子导体构成; 和(3)与温度补偿单元电接触的电极暴露于大气中,是多孔体; 氧传感器装置和空/燃比控制系统。