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    Mixed organosiloxane networks for tunable surface properties for blanket substrates for indirect printing methods
    4.
    发明授权
    Mixed organosiloxane networks for tunable surface properties for blanket substrates for indirect printing methods 有权
    用于间接印刷方法的橡皮布基材的可调表面性质的混合有机硅氧烷网络

    公开(公告)号：US09109140B2

    公开(公告)日：2015-08-18

    申请号：US13746634

    申请日：2013-01-22

    Applicant: XEROX CORPORATION

    Inventor： Brynn Mary Dooley ,  Carolyn P. Moorlag ,  Anthony James Wigglesworth ,  Adrien Pierre Cote ,  Yu Qi ,  Barkev Keoshkerian

    IPC: B41J2/01 ,  C09D183/04 ,  B41J2/005 ,  B41J2/21

    CPC classification number: C09D183/04 ,  B41J2/0057 ,  B41J2/2107 ,  B41J2002/012 ,  C08G77/14 ,  C08G77/24 ,  C09D183/08

    Abstract: A crosslinked siloxane composition contains the polymerization product of a mixture containing from about 2 to about 12 alkoxysilane precursor materials, where at least one of the alkoxysilane precursor materials is a hydrophilic alkoxysilane precursor material, and at least one of the alkoxysilane precursor materials is a hydrophobic alkoxysilane precursor material. A method of printing an image to a substrate involves applying an inkjet ink to an intermediate transfer member using an inkjet printhead, spreading the ink onto the transfer member, inducing a property change of the ink, and transferring the ink to a substrate, where the intermediate transfer member comprises a crosslinked siloxane composition containing the polymerization product of a mixture comprising from about 2 to about 12 alkoxysilane precursor materials, where at least one of the precursor materials is hydrophilic and at least one is hydrophobic.

    Abstract translation: 交联的硅氧烷组合物包含含有约2至约12个烷氧基硅烷前体材料的混合物的聚合产物，其中至少一种烷氧基硅烷前体材料是亲水性烷氧基硅烷前体材料，并且至少一种烷氧基硅烷前体材料是疏水性的 烷氧基硅烷前体材料。 将图像印刷到基板的方法包括使用喷墨打印头将喷墨油墨施加到中间转印部件上，将墨水扩散到转印部件上，引起墨水的特性变化，并将墨水转印到基底上，其中 中间转移构件包含含有包含约2至约12个烷氧基硅烷前体材料的混合物的聚合产物的交联硅氧烷组合物，其中至少一种前体材料是亲水性的并且至少一种是疏水性的。

    DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS
    6.
    发明申请
    DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS 审中-公开
    薄膜晶体管的电介质组成

    公开(公告)号：US20140114002A1

    公开(公告)日：2014-04-24

    申请号：US14142035

    申请日：2013-12-27

    Applicant: Xerox Corporation

    Inventor： Yiliang Wu ,  Ping Liu ,  Anthony James Wigglesworth ,  Nan-Xing Hu

    IPC: H01B3/46

    CPC classification number: H01L21/02126 ,  H01B3/306 ,  H01B3/42 ,  H01B3/447 ,  H01B3/46 ,  H01L21/02118 ,  H01L21/02282 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

    Abstract: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

    Abstract translation: 诸如薄膜晶体管的电子器件包括由电介质组合物形成的衬底和电介质层。 电介质组合物包括电介质材料，交联剂和热酸发生剂。 在特定实施例中，介电材料包括较低介电常数材料和较高介电常数材料。 当沉积时，较低k电介质材料和较高介电材料形成分离相。 热酸发生器允许电介质层在相对较低的温度和/或更短的时间段内固化，允许选择否则通过电介质层的固化而变形的较低成本的基底材料。

    Semiconductor composites comprising carbon nanotubes and diketopyrrolopyrrole-thiophene based copolymers
    7.
    发明授权
    Semiconductor composites comprising carbon nanotubes and diketopyrrolopyrrole-thiophene based copolymers 有权
    包含碳纳米管和二酮吡咯并吡咯 - 噻吩基共聚物的半导体复合材料

    公开(公告)号：US09214258B2

    公开(公告)日：2015-12-15

    申请号：US13706836

    申请日：2012-12-06

    Applicant: XEROX CORPORATION

    Inventor： Yiliang Wu ,  Anthony James Wigglesworth ,  Ping Liu

    IPC: H01B1/24 ,  H01L51/00 ,  H01L51/05 ,  B82Y30/00

    CPC classification number: H01B1/24 ,  B82Y30/00 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/784 ,  Y10S977/932 ,  Y10S977/936

    Abstract: A semiconductor composition includes a semiconducting polymer containing a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. An electronic device contains a semiconductor layer including a semiconductor composition having a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. A semiconductor composition contains a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety, a solvent selected from the group consisting of tetrachloroethane, dichlorobenzene, chlorobenzene, chlorotoluene, and a mixture thereof, and a carbon nanotube.

    Abstract translation: 半导体组合物包括含有二酮吡咯并吡咯（DKPP）部分的半导体聚合物和分散在半导体聚合物中的碳纳米管。 电子器件含有包含半导体组合物的半导体层，该半导体组合物具有包含二酮吡咯并吡咯（DKPP）部分的半导体聚合物和分散在该半导体聚合物中的碳纳米管。 半导体组合物含有包含二酮吡咯并吡咯（DKPP）部分的半导体聚合物，选自四氯乙烷，二氯苯，氯苯，氯甲苯及其混合物的溶剂和碳纳米管。

    Copolythiophene semiconductors for electronic device applications
    9.
    发明授权
    Copolythiophene semiconductors for electronic device applications 有权
    用于电子设备应用的共聚噻吩半导体

    公开(公告)号：US08569443B1

    公开(公告)日：2013-10-29

    申请号：US13718308

    申请日：2012-12-18

    Applicant: Xerox Corporation

    Inventor： Ping Liu ,  Yiliang Wu ,  Cameron Derry ,  Anthony James Wigglesworth ,  Nan-Xing Hu

    IPC: C08G75/00

    CPC classification number: C08G75/00

    Abstract: A semiconducting copolythiophene composition that includes repeating units obtained from the copolymerization of compounds of Formula (2): and Formula (3): in which the copolythiophene has at least two repeating units (possessing side chains, such as alkyl side chains), which are arranged in manner such that the side chains on the polythiophene backbone are distributed non-uniformly, is described. Electronic devices incorporating such copolythiophene compositions are also described.

    Abstract translation: 一种半导体共聚噻吩组合物，其包含由式（2）：和式（3）的化合物的共聚获得的重复单元：其中共聚噻吩具有至少两个重复单元（具有侧链，如烷基侧链），它们是 以使得聚噻吩主链上的侧链不均匀分布的方式进行描述。 还描述了包含这种共聚噻吩组合物的电子器件。

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