Method and apparatus for determining dielectric layer properties
    1.
    发明授权
    Method and apparatus for determining dielectric layer properties 有权
    用于确定介电层性质的方法和装置

    公开(公告)号:US08004290B1

    公开(公告)日:2011-08-23

    申请号:US12061447

    申请日:2008-04-02

    IPC分类号: G01R27/26 G01R31/26

    摘要: A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.

    摘要翻译: 公开了一种用于确定介电层性质的方法和装置。 绝缘层厚度,电介质泄漏或其他电信息等介质层性质可以针对半导体或导电基片上的多层膜堆叠来确定。 薄膜叠层可以包括在基底和半导体或导电材料的中间层之间的第一介电层,以及布置成中间层位于第一和第二介电层之间的第二介电层。 电介质层的性质可以通过以下步骤来确定:a)在第二介电层的暴露表面上的一个或多个局部区域沉积电荷; b)执行所述一个或多个局部区域处的电量的测量; 以及c)从所述一个或多个测量确定所述第二电介质层的特性。