公开(公告)号：US08400825B2

公开(公告)日：2013-03-19

申请号：US13491891

申请日：2012-06-08

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US20120250405A1

公开(公告)日：2012-10-04

申请号：US13491891

申请日：2012-06-08

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US20100034008A1

公开(公告)日：2010-02-11

申请号：US12199126

申请日：2008-08-27

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/22

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US08223532B2

公开(公告)日：2012-07-17

申请号：US12199126

申请日：2008-08-27

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US07876595B2

公开(公告)日：2011-01-25

申请号：US12233760

申请日：2008-09-19

申请人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

发明人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

IPC分类号： G11C19/00

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.

摘要翻译： 具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反 到第一个方向。 第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。 每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。 铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。

公开(公告)号：US20100073984A1

公开(公告)日：2010-03-25

申请号：US12233760

申请日：2008-09-19

申请人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E. Anderson ,  Hongyue Liu

发明人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E. Anderson ,  Hongyue Liu

IPC分类号： G11C19/00

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.

摘要翻译： 具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反 到第一个方向。 第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。 每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。 铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。

公开(公告)号：US20090316462A1

公开(公告)日：2009-12-24

申请号：US12144705

申请日：2008-06-24

申请人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

发明人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

IPC分类号： G11C19/08

CPC分类号： G11C19/0808 ,  G11C11/14 ,  Y10S977/933

摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。

公开(公告)号：US08102691B2

公开(公告)日：2012-01-24

申请号：US12144705

申请日：2008-06-24

申请人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

发明人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  G11C11/14 ,  Y10S977/933

摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。

公开(公告)号：US20110006275A1

公开(公告)日：2011-01-13

申请号：US12501533

申请日：2009-07-13

申请人： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

发明人： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

IPC分类号： H01L45/00 ,  H01L21/20

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1608

摘要： A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

摘要翻译： 电阻式感测存储单元包括一层结晶的镨钙锰氧化物和一层无定形的镨钙锰氧化物，其设置在形成电阻式感测存储堆的结晶镨钙锰氧化物层上。 第一和第二电极由电阻式感测存储器堆分隔开。 电阻式感测存储单元还可以包括从无定形镨钙锰氧化物层的层分离结晶镨钙锰氧化物层的氧扩散阻挡层。 方法包括沉积形成电阻式感测存储器叠层的结晶镨钙锰氧化物层上的无定形镨钙锰氧化物。

公开(公告)号：US07838066B2

公开(公告)日：2010-11-23

申请号：US11961705

申请日：2007-12-20

申请人： Tong Zhao ,  Andreas Roelofs ,  Cedric Stephane Bedoya

发明人： Tong Zhao ,  Andreas Roelofs ,  Cedric Stephane Bedoya

IPC分类号： B05D3/04

CPC分类号： G11B9/02 ,  B29C71/02 ,  B29C2071/022 ,  H01L27/11502

摘要： A single annealing process simultaneously creates local areas of ferroelectric imprint that can be used as markers, and areas with low leakage current that exhibit ideal symmetric switching on ferroelectric recording media.

摘要翻译： 单个退火过程同时产生可用作标记的铁电印记的局部区域，以及在铁电记录介质上表现出理想的对称开关的具有低漏电流的区域。