Active pixel having reduced dark current in a CMOS image sensor
    1.
    发明授权
    Active pixel having reduced dark current in a CMOS image sensor 有权
    有源像素在CMOS图像传感器中具有降低的暗电流

    公开(公告)号:US07105878B2

    公开(公告)日:2006-09-12

    申请号:US10945538

    申请日:2004-09-20

    IPC分类号: H01L31/062 H01L31/113

    CPC分类号: H01L27/14643 H01L27/1463

    摘要: The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. The protective structure has a photodiode contact formed therein to electrically connect the photodiode to the pixel output transistor.

    摘要翻译: 有源像素包括光电二极管,复位晶体管和像素输出晶体管。 光电二极管基本上覆盖有保护结构,从而保护光电二极管的整个表面免受损坏。 这实质上消除了潜在的漏电流源,这导致暗电流。 保护结构具有形成在其中的光电二极管接头,以将光电二极管电连接到像素输出晶体管。

    Active pixel having reduced dark current in a CMOS image sensor
    2.
    发明申请
    Active pixel having reduced dark current in a CMOS image sensor 有权
    有源像素在CMOS图像传感器中具有降低的暗电流

    公开(公告)号:US20050062085A1

    公开(公告)日:2005-03-24

    申请号:US10945538

    申请日:2004-09-20

    IPC分类号: H01L27/146 H01L31/062

    CPC分类号: H01L27/14643 H01L27/1463

    摘要: The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. The protective structure has a photodiode contact formed therein to electrically connect the photodiode to the pixel output transistor.

    摘要翻译: 有源像素包括光电二极管,复位晶体管和像素输出晶体管。 光电二极管基本上覆盖有保护结构,从而保护光电二极管的整个表面免受损坏。 这实质上消除了潜在的漏电流源,这导致暗电流。 保护结构具有形成在其中的光电二极管接头,以将光电二极管电连接到像素输出晶体管。

    Sacrificial protective layer for image sensors and method of using
    3.
    发明申请
    Sacrificial protective layer for image sensors and method of using 有权
    图像传感器牺牲保护层及使用方法

    公开(公告)号:US20050130337A1

    公开(公告)日:2005-06-16

    申请号:US10734099

    申请日:2003-12-11

    IPC分类号: H01L21/00

    摘要: A method for protecting an image sensor die is disclosed. The method comprises forming a plurality of image sensor die having micro-lenses onto a semiconductor wafer. Then, a protective layer is formed over the image sensor die. After the protective layer has been formed, and without any removal step of the protective layer, the wafer is diced to separate the plurality of image sensor die. Finally, the image sensor die are mounted onto an integrated circuit package and the protective layer is removed.

    摘要翻译: 公开了一种用于保护图像传感器裸片的方法。 该方法包括在半导体晶片上形成具有微透镜的多个图像传感器裸片。 然后,在图像传感器芯片上形成保护层。 在形成保护层之后,并且没有保护层的任何去除步骤,切割晶片以分离多个图像传感器管芯。 最后,将图像传感器芯片安装到集成电路封装上,并且去除保护层。