Control of removal profile in electrochemically assisted CMP
    4.
    发明授权
    Control of removal profile in electrochemically assisted CMP 失效
    电化学辅助CMP中去除曲线的控制

    公开(公告)号:US06991526B2

    公开(公告)日:2006-01-31

    申请号:US10244697

    申请日:2002-09-16

    IPC分类号: B24B1/00 C25F7/00

    CPC分类号: B24B37/042 B23H5/08

    摘要: Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.

    摘要翻译: 本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。 一方面,用于研磨衬底的装置包括对电极和位于衬底和对电极之间的衬垫以及位于衬底和对电极之间的衬垫。 电介质插入件位于对电极和衬底之间。 电介质插入件具有多个区域,每个区域允许在对电极和衬底之间分开的电流密度。 在另一个实施例中,用于抛光包括导电层的衬底的装置包括与材料层相对的对电极。 对电极包括多个电绝缘的导电元件。 电连接器分别耦合到每个导电元件。