HIGH EFFICIENCY UV CURING SYSTEM
    6.
    发明申请
    HIGH EFFICIENCY UV CURING SYSTEM 审中-公开
    高效UV固化系统

    公开(公告)号:US20090162259A1

    公开(公告)日:2009-06-25

    申请号:US12393851

    申请日:2009-02-26

    IPC分类号: B01J19/08

    摘要: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV sources per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV sources can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

    摘要翻译: 紫外线(UV)固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域,所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV源被耦合到盖的壳体覆盖,将通过窗口的UV光发射到位于处理区域内的衬底上。 UV源可以是利用诸如微波或射频之类的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用,基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。

    High efficiency UV curing system
    7.
    发明授权
    High efficiency UV curing system 有权
    高效UV固化系统

    公开(公告)号:US07663121B2

    公开(公告)日:2010-02-16

    申请号:US11424368

    申请日:2006-06-15

    IPC分类号: G01N23/00

    摘要: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

    摘要翻译: 紫外线(UV)固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域,所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV灯泡被耦合到盖的壳体覆盖,将通过窗口的UV光发射到位于处理区域内的衬底上。 UV灯泡可以是利用诸如微波或射频的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用,基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。

    Multifunctional heater/chiller pedestal for wide range wafer temperature control
    8.
    发明授权
    Multifunctional heater/chiller pedestal for wide range wafer temperature control 有权
    多功能加热器/冷水机座,适用于宽幅晶圆温度控制

    公开(公告)号:US08274017B2

    公开(公告)日:2012-09-25

    申请号:US12641819

    申请日:2009-12-18

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67109 H01L21/68792

    摘要: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

    摘要翻译: 本发明的实施例一般涉及半导体处理室,更具体地说,涉及用于半导体处理室的加热支撑基座。 在一个实施例中,提供了一种用于半导体处理室的基座。 基座包括基板支撑件,该基板支撑件包括导电材料并且具有用于接收基板的支撑表面,封装在基板支撑件内的电阻加热器,在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口, 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件,所述冷却通道组件设置在所述轴体内,用于经由内部冷却路径从所述基座移除热量,其中所述基板支撑件具有位于 加热元件和环形冷却通道。

    MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL
    9.
    发明申请
    MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL 有权
    多功能加热器/冷却器用于宽范围的温度控制

    公开(公告)号:US20110147363A1

    公开(公告)日:2011-06-23

    申请号:US12641819

    申请日:2009-12-18

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67109 H01L21/68792

    摘要: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

    摘要翻译: 本发明的实施例一般涉及半导体处理室,更具体地说,涉及用于半导体处理室的加热支撑基座。 在一个实施例中,提供了一种用于半导体处理室的基座。 基座包括基板支撑件,该基板支撑件包括导电材料并且具有用于接收基板的支撑表面,封装在基板支撑件内的电阻加热器,在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口, 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件,所述冷却通道组件设置在所述轴体内,用于经由内部冷却路径从所述基座移除热量,其中所述基板支撑件具有位于 加热元件和环形冷却通道。

    INCREASED TOOL UTILIZATION/REDUCTION IN MWBC FOR UV CURING CHAMBER
    10.
    发明申请
    INCREASED TOOL UTILIZATION/REDUCTION IN MWBC FOR UV CURING CHAMBER 有权
    紫外线固化室MWBC中增加工具的使用/减少

    公开(公告)号:US20070298362A1

    公开(公告)日:2007-12-27

    申请号:US11562043

    申请日:2006-11-21

    IPC分类号: F27D3/00 F27D11/00

    CPC分类号: F27B17/0025 H01L21/67115

    摘要: A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.

    摘要翻译: 泵衬套用于引导吹扫气体的层流穿过工件以去除在加工过程中由工件脱气或以其它方式产生的污染物或物质。 泵衬套可以采取具有多个注入口的环的形式,例如与多个接收端口相对的各种形状和/或尺寸的狭缝,以提供层流。 吹扫气体的流动足以承载来自处理室的污染物或去气物质,以便防止在室的部件上收集污染物。 可以通过例如辐射源的传导和辐射来加热泵衬垫,以防止物质在衬套上的冷凝。 泵衬垫也可以被阳极化处理或以其它方式加工,以便增加衬套的发射率。