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公开(公告)号:US20110287607A1
公开(公告)日:2011-11-24
申请号:US13076238
申请日:2011-03-30
申请人: Yasu Osako , Bong Cho , Daragh Finn , Andrew Hooper , James O'Brien
发明人: Yasu Osako , Bong Cho , Daragh Finn , Andrew Hooper , James O'Brien
CPC分类号: B23K26/364 , B23K26/0608 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/67092
摘要: Laser singulation of electronic devices from semiconductor substrates including wafers is performed using up to 3 lasers from 2 wavelength ranges. Using up to 3 lasers from 2 wavelength ranges permits laser singulation of wafers held by die attach film while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers from 2 wavelength ranges permits efficient dicing of semiconductor wafers while avoiding debris and thermal problems associated with laser processing die attach tape.
摘要翻译: 使用来自2个波长范围的3个激光器来执行包括晶片的半导体基板的电子器件的激光切割。 使用2个波长范围的多达3个激光器可以激光切割由芯片附着膜保持的晶片,同时避免单波长切割引起的问题。 特别地,使用2个波长范围的多达3个激光器可以有效切割半导体晶片,同时避免与激光加工芯片附着带相关的碎片和热问题。
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公开(公告)号:US20110240616A1
公开(公告)日:2011-10-06
申请号:US12753367
申请日:2010-04-02
申请人: Yasu Osako , Daragh Finn
发明人: Yasu Osako , Daragh Finn
IPC分类号: B23K26/00
CPC分类号: H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/38 , B23K26/40 , B23K2103/50 , B23K2103/56
摘要: An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.
摘要翻译: 用于将电子衬底分离成骰子的改进方法使用激光器首先在衬底中形成切口,然后通过改变激光器参数来倒角切口的边缘。 倒角通过减少残余损伤并消除由初始激光切割引起的碎片而增加冲模强度,而不需要额外的工艺步骤,附加设备或消耗品。
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公开(公告)号:US08383984B2
公开(公告)日:2013-02-26
申请号:US12753367
申请日:2010-04-02
申请人: Yasu Osako , Daragh Finn
发明人: Yasu Osako , Daragh Finn
IPC分类号: B23K26/00
CPC分类号: H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/38 , B23K26/40 , B23K2103/50 , B23K2103/56
摘要: An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.
摘要翻译: 用于将电子衬底分离成骰子的改进方法使用激光器首先在衬底中形成切口,然后通过改变激光器参数来倒角切口的边缘。 倒角通过减少残余损伤并消除由初始激光切割引起的碎片而增加冲模强度,而不需要额外的工艺步骤,附加设备或消耗品。
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公开(公告)号:US08894868B2
公开(公告)日:2014-11-25
申请号:US13267813
申请日:2011-10-06
申请人: Andy Hooper , Daragh Finn , Tim Webb , Lynn Sheehan , Kenneth Pettigrew , Yu Chong Tai
发明人: Andy Hooper , Daragh Finn , Tim Webb , Lynn Sheehan , Kenneth Pettigrew , Yu Chong Tai
IPC分类号: H01L21/302 , B23K26/00 , B44C1/22 , H01L21/306 , H01L21/3065 , B23K26/36 , B23K26/38 , B23K26/40 , H01L21/768
CPC分类号: B23K26/00 , B23K26/364 , B23K26/382 , B23K26/389 , B23K26/40 , B23K2101/35 , B23K2103/50 , B23K2103/52 , B44C1/22 , H01L21/30604 , H01L21/3065 , H01L21/76898 , Y10S438/94 , Y10T428/24273
摘要: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.
摘要翻译: 在衬底内形成孔径(例如通孔,盲孔,沟槽,对准特征等)的方法包括用激光束照射衬底以形成具有侧壁的激光加工特征。 然后对激光加工的特征进行处理以改变激光加工特征的至少一个特征(例如,侧壁表面粗糙度,直径,锥度,纵横比,横截面轮廓等)。 可以通过使用含有HNO 3,HF和任选的乙酸的蚀刻剂溶液进行各向同性的湿蚀刻工艺来处理激光加工的特征以形成孔。
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公开(公告)号:US20130089701A1
公开(公告)日:2013-04-11
申请号:US13267813
申请日:2011-10-06
申请人: Andy Hooper , Daragh Finn , Tim Webb , Lynn Sheehan , Kenneth Pettigrew , Yu Chong Tai
发明人: Andy Hooper , Daragh Finn , Tim Webb , Lynn Sheehan , Kenneth Pettigrew , Yu Chong Tai
IPC分类号: B23K26/00 , B44C1/22 , H01L21/306 , B32B3/24
CPC分类号: B23K26/00 , B23K26/364 , B23K26/382 , B23K26/389 , B23K26/40 , B23K2101/35 , B23K2103/50 , B23K2103/52 , B44C1/22 , H01L21/30604 , H01L21/3065 , H01L21/76898 , Y10S438/94 , Y10T428/24273
摘要: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.
摘要翻译: 在衬底内形成孔径(例如通孔,盲孔,沟槽,对准特征等)的方法包括用激光束照射衬底以形成具有侧壁的激光加工特征。 然后对激光加工的特征进行处理以改变激光加工特征的至少一个特征(例如,侧壁表面粗糙度,直径,锥度,纵横比,横截面轮廓等)。 可以通过使用含有HNO 3,HF和任选的乙酸的蚀刻剂溶液进行各向同性的湿蚀刻工艺来处理激光加工的特征以形成孔。
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