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    Method of forming a pattern
    2.
    发明授权
    Method of forming a pattern 失效
    形成图案的方法

    公开(公告)号：US06569595B1

    公开(公告)日：2003-05-27

    申请号：US09512286

    申请日：2000-02-24

    申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

    发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

    IPC分类号： G03F700

    CPC分类号： G03F7/091

    摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.

    摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由 在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子， 氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

    Method of forming a pattern
    4.
    发明授权
    Method of forming a pattern 失效
    形成图案的方法

    公开(公告)号：US06420271B2

    公开(公告)日：2002-07-16

    申请号：US09814839

    申请日：2001-03-23

    申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

    发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

    IPC分类号： H01L214763

    CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

    摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

    摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

    PATTERN FORMING METHOD
    5.
    发明申请
    PATTERN FORMING METHOD 审中-公开
    图案形成方法

    公开(公告)号：US20100304568A1

    公开(公告)日：2010-12-02

    申请号：US12752684

    申请日：2010-04-01

    申请人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

    发明人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

    IPC分类号： H01L21/302 ,  G03F7/20

    CPC分类号： G03F1/34 ,  G03F7/095 ,  H01L21/0274 ,  H01L21/31144

    摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.

    摘要翻译： 图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度， 通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置， 以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂 剩下第二光致抗蚀剂。

    SUBSTRATE PROCESSING APPARATUS AND METHOD
    6.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND METHOD 失效
    基板加工装置和方法

    公开(公告)号：US20090226624A1

    公开(公告)日：2009-09-10

    申请号：US12466525

    申请日：2009-05-15

    申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    IPC分类号： B05D1/02 ,  B05B7/00 ,  B05B13/04 ,  B05C5/00 ,  B05B15/02

    CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

    摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

    摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

    PATTERNING METHOD
    7.
    发明申请
    PATTERNING METHOD 审中-公开
    绘图方法

    公开(公告)号：US20090123878A1

    公开(公告)日：2009-05-14

    申请号：US12256240

    申请日：2008-10-22

    申请人： Seiro MIYOSHI ,  Eishi Shiobara

    发明人： Seiro MIYOSHI ,  Eishi Shiobara

    IPC分类号： G03F7/20

    CPC分类号： H01L21/31144 ,  G03F7/11 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/28017 ,  H01L21/32139

    摘要： A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.

    摘要翻译： 图案化方法包括：在工件基板上形成第一膜; 在第一膜上形成第二膜，第二膜是相对于第一膜的EUV（极紫外）光具有较低的光吸收系数的硅膜; 在第二膜上形成抗蚀剂膜; 用EUV光选择性地照射抗蚀剂膜; 并开发抗蚀膜。

    Substrate processing apparatus and method
    8.
    发明授权
    Substrate processing apparatus and method 失效
    基板加工装置及方法

    公开(公告)号：US07779777B2

    公开(公告)日：2010-08-24

    申请号：US12466525

    申请日：2009-05-15

    申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    IPC分类号： B05B15/02 ,  B05B3/00 ,  B05B1/28 ,  B05B13/02

    CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

    摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

    摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

    Substrate processing apparatus and method
    9.
    发明申请
    Substrate processing apparatus and method 审中-公开
    基板加工装置及方法

    公开(公告)号：US20070266936A1

    公开(公告)日：2007-11-22

    申请号：US11798132

    申请日：2007-05-10

    申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    IPC分类号： B05C11/02

    CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

    摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

    摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。