公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

公开(公告)号：US6025117A

公开(公告)日：2000-02-15

申请号：US986517

申请日：1997-12-08

申请人： Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasuhiko Sato ,  Seiro Miyoshi ,  Toru Ushirogouchi ,  Sawako Yoshikawa ,  Hideto Matsuyama ,  Yasunobu Onishi ,  Masaki Narita ,  Toshiro Hiraoka

发明人： Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasuhiko Sato ,  Seiro Miyoshi ,  Toru Ushirogouchi ,  Sawako Yoshikawa ,  Hideto Matsuyama ,  Yasunobu Onishi ,  Masaki Narita ,  Toshiro Hiraoka

IPC分类号： C08G77/60 ,  C08G83/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/00

CPC分类号： C08G83/003 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/091

摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.

摘要翻译： 具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。 聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。 在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。 聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

公开(公告)号：US5994007A

公开(公告)日：1999-11-30

申请号：US213373

申请日：1998-12-17

申请人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

发明人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/203 ,  G03F7/091 ,  G03F7/093 ,  Y10S430/143

摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.

摘要翻译： 公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光 将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

公开(公告)号：US06569595B1

公开(公告)日：2003-05-27

申请号：US09512286

申请日：2000-02-24

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

IPC分类号： G03F700

CPC分类号： G03F7/091

摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由 在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子， 氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：US20070042297A1

公开(公告)日：2007-02-22

申请号：US11316898

申请日：2005-12-27

申请人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

摘要翻译： 根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为 第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触 第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

公开(公告)号：US07026099B2

公开(公告)日：2006-04-11

申请号：US10419921

申请日：2003-04-22

申请人： Hirokazu Kato ,  Yasunobu Onishi ,  Eishi Shiobara ,  Daisuke Kawamura ,  Hiroko Nakamura

发明人： Hirokazu Kato ,  Yasunobu Onishi ,  Eishi Shiobara ,  Daisuke Kawamura ,  Hiroko Nakamura

IPC分类号： G03F7/00

CPC分类号： H01L21/0279 ,  G03F7/0035 ,  H01L21/0275 ,  H01L21/0277 ,  H01L21/0278

摘要： A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.

公开(公告)号：US07968272B2

公开(公告)日：2011-06-28

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03C5/04

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US07687227B2

公开(公告)日：2010-03-30

申请号：US11316898

申请日：2005-12-27

申请人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

摘要翻译： 根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为 第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触 第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。