-
公开(公告)号：US07602020B2
公开(公告)日：2009-10-13
申请号：US11522376
申请日：2006-09-18
IPC分类号： H01L27/12
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially—in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film.
摘要翻译： 薄膜晶体管器件通过引入硅化物膜来降低源极和漏极之间的基本上的电阻，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 使用金属的硅半导体的暴露表面，并且从上侧或从绝缘体基板侧向金属膜照射强光如激光束，以允许金属涂层与硅反应以获得硅化物膜 。
-
公开(公告)号：US06790749B2
公开(公告)日：2004-09-14
申请号：US10241624
申请日：2002-09-12
IPC分类号： H01L2120
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： An object of this invention is to provide a semiconductor device manufacturing method in which a semiconductor film is formed over a substrate, the semiconductor film is crystallized by irradiating a laser light, a silicon oxide film is formed in contact with the crystalline semiconductor film by using organic silane, a gate electrode is formed in contact with the silicon oxide film, an impurity element is introduced into the crystalline semiconductor film, the impurity element is activated, an interlayer insulating film is formed over the gate electrode, and then a wiring comprising aluminum is formed over the interlayer insulating film.
摘要翻译： 本发明的目的是提供一种半导体器件的制造方法，其中半导体膜形成在衬底上，半导体膜通过照射激光而结晶，通过使用通过使用氧化硅膜与晶体半导体膜接触形成氧化硅膜 有机硅烷，形成与氧化硅膜接触的栅电极，将杂质元素引入晶体半导体膜中，杂质元素被激活，在栅电极上形成层间绝缘膜，然后将包含铝的布线 形成在层间绝缘膜上。
-
公开(公告)号：US07109108B2
公开(公告)日：2006-09-19
申请号：US10938500
申请日：2004-09-13
IPC分类号： H01L21/4763
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.
摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘附到暴露的源极和漏极区域，并且允许金属与硅反应来获得。 可以实现高性能TFT。 金属硅化物层实现与源极和漏极的良好接触，并且由于其具有比硅更低的电阻率，所以源极和漏极区域之间的寄生电阻可以显着降低。
-
公开(公告)号：US5962897A
公开(公告)日：1999-10-05
申请号：US886139
申请日：1997-06-30
IPC分类号： H01L21/336 , H01L21/70 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/786 , H01L27/01 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device incorporates a silicide film contacting the source and drain. The silicide layer substantially reduces parasitic resistance between the source and drain of the device, improving the performance of the TFT. The silicide layer may be formed by covering the silicon semiconductor with a metal and irradiating the metal with a laser to initiate a reaction with the adjacent silicon to produce a silicide film. The layer may also be formed by rigidly adhering a metal coating to the exposed source and drain regions using a triangular-shaped insulator, and allowing the metal to react with silicon.
摘要翻译： 薄膜晶体管器件包括接触源极和漏极的硅化物膜。 硅化物层大大降低了器件的源极和漏极之间的寄生电阻，从而改善了TFT的性能。 可以通过用金属覆盖硅半导体并用激光照射金属以引发与相邻硅的反应以形成硅化物膜来形成硅化物层。 该层还可以通过使用三角形绝缘体将金属涂层刚性粘附到暴露的源极和漏极区域并且允许金属与硅反应而形成。
-
公开(公告)号：US5627384A
公开(公告)日：1997-05-06
申请号：US636820
申请日：1996-04-23
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/78 , H01L29/786 , H01L29/76
CPC分类号： H01L27/12 , H01L29/41733 , H01L29/66757 , H01L29/78621
摘要： Method of improving making contact with the source/drain regions of thin-film transistors. A substantially triangular insulator determines contacts with the source/drain regions by a self-aligning process. The width of this insulator can be determined without performing mask alignment. Furthermore, the width can be reduced. Therefore, the sheet resistance of the source/drain regions presents no serious problems.
摘要翻译： 改善与薄膜晶体管的源/漏区接触的方法。 基本上三角形的绝缘体通过自对准工艺确定与源极/漏极区的接触。 可以在不执行掩模对准的情况下确定该绝缘体的宽度。 此外，可以减小宽度。 因此，源极/漏极区域的薄层电阻没有严重的问题。
-
公开(公告)号：US20050037549A1
公开(公告)日：2005-02-17
申请号：US10938500
申请日：2004-09-13
IPC分类号： H01L21/336 , H01L21/70 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/786 , H01L21/00
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon. A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.
摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘附到暴露的源极和漏极区域，并且允许金属与硅反应来获得。 可以实现高性能TFT。 金属硅化物层实现与源极和漏极的良好接触，并且由于其具有比硅更低的电阻率，所以源极和漏极区域之间的寄生电阻可以显着降低。
-
公开(公告)号：US06455875B2
公开(公告)日：2002-09-24
申请号：US09387054
申请日：1999-08-31
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially in resistance between the source and the drain regions by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed surface of the source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 &mgr;m or less in width, and allowing the metal to react with silicon. Accordingly, a high performance TFT is realized since the metal silicide layer achieves favorable contact with the source and drain regions, and, since it has lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.
摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极区域之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的工艺制造，阳极氧化栅极接触，覆盖 使用金属的硅半导体的暴露表面，并且从上侧或从绝缘体基板侧向金属膜照射强光如激光束，以允许金属涂层与硅反应以获得硅化物膜 。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘附到源极和漏极区域的露出表面而获得，并且允许金属与硅反应 。 因此，由于金属硅化物层与源极和漏极区域达到良好的接触，所以实现了高性能TFT，并且由于其具有比硅更低的电阻率，因此可以显着降低源极和漏极区域之间的寄生电阻。
-
公开(公告)号：US5897344A
公开(公告)日：1999-04-27
申请号：US779114
申请日：1997-01-06
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/78 , H01L29/786 , H01L21/00
CPC分类号： H01L27/12 , H01L29/41733 , H01L29/66757 , H01L29/78621
摘要： Method of improving making contact with the source/drain regions of thin-film transistors. A substantially triangular insulator determines contacts with the source/drain regions by a self-aligning process. The width of this insulator can be determined without performing mask alignment. Furthermore, the width can be reduced. Therefore, the sheet resistance of the source/drain regions presents no serious problems.
摘要翻译： 改善与薄膜晶体管的源/漏区接触的方法。 基本上三角形的绝缘体通过自对准工艺确定与源极/漏极区的接触。 可以在不执行掩模对准的情况下确定该绝缘体的宽度。 此外，可以减小宽度。 因此，源极/漏极区域的薄层电阻没有严重的问题。
-
公开(公告)号：US08017506B2
公开(公告)日：2011-09-13
申请号：US12604879
申请日：2009-10-23
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.
摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露出硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘接到暴露的源极和漏极区域，并且允许金属与硅反应的方式获得。
-
公开(公告)号：US07723788B2
公开(公告)日：2010-05-25
申请号：US12369578
申请日：2009-02-11
IPC分类号： H01L27/12
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.
摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘接到暴露的源极和漏极区域，并且允许金属与硅反应的方式获得。
-
-
-
-
-
-
-
-
-
搜索结果
523 条记录 (耗时 0.022 秒)