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公开(公告)号：US20090050475A1
公开(公告)日：2009-02-26
申请号：US12259391
申请日：2008-10-28
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm−10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm〜10重量％的Zr和Ti中的任一种或两者的铪合金靶，平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US20060189164A1
公开(公告)日：2006-08-24
申请号：US10548347
申请日：2004-02-21
IPC分类号： H01L23/58 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02181 , C22C27/00 , C23C14/3414 , H01L21/02266 , H01L21/31645 , Y10S148/158
摘要： Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 350 from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 本发明提供一种铪合金靶，其含有Zr和Ti中的任一种或两者，其总量为100重量ppm-10重量％，其中平均晶粒尺寸为1-100微米，Fe，Cr和Ni的杂质分别为 1％以下，{002}的平面{002}和三面{103}，{014}和{015}的习惯平面比在55％以内，为55％以上，总和的变化 这四个平面的强度比取决于位置的20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US08262816B2
公开(公告)日：2012-09-11
申请号：US12259396
申请日：2008-10-28
IPC分类号： C22C14/00
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
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公开(公告)号：US20090000704A1
公开(公告)日：2009-01-01
申请号：US12204069
申请日：2008-09-04
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
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公开(公告)号：US20090057142A1
公开(公告)日：2009-03-05
申请号：US12259396
申请日：2008-10-28
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf; wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶; 其平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1wtppm以下，平面{002}和三个平面{103} {014}和{ 位于距离{002}的35°以内的倾角为55％以上，并且根据位置的这四个平面的强度比的总和的变化为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US08241438B2
公开(公告)日：2012-08-14
申请号：US12259391
申请日：2008-10-28
IPC分类号： C22C14/00
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶，其中平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US08062440B2
公开(公告)日：2011-11-22
申请号：US12204069
申请日：2008-09-04
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶，其中平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US07605481B2
公开(公告)日：2009-10-20
申请号：US10575888
申请日：2004-10-14
申请人： Yasuhiro Yamakoshi , Ryo Suzuki
发明人： Yasuhiro Yamakoshi , Ryo Suzuki
IPC分类号： H01L23/48
CPC分类号： C23C14/3414 , C22C19/03
摘要： The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.
摘要翻译： 本发明涉及包含1至30原子％的Cu的镍合金溅射靶; 2〜25at％的选自V，Cr，Al，Si，Ti和Mo中的至少一种元素; 残留的Ni和不可避免的杂质，以抑制焊料凸块与衬底层或衬垫之间的Sn扩散。 提供了一种用于形成与无铅Sn焊料或Sn-Pb焊料凸块具有优异润湿性的阻挡层的镍合金溅射靶和镍合金薄膜，并且能够抑制作为焊接成分的Sn的扩散并有效地防止 在诸如半导体晶片或电子电路的基板或其上形成的布线或电极的基板层或焊盘上形成无铅Sn焊料或Sn-Pb焊料凸块时与基板层的反应。
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公开(公告)号：US07459036B2
公开(公告)日：2008-12-02
申请号：US10548347
申请日：2004-01-21
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 本发明提供一种铪合金靶，其含有Zr和Ti中的任一种或两者，其总量为100重量ppm-10重量％，其中平均晶粒尺寸为1-100微米，Fe，Cr和Ni的杂质分别为 1％以下，与{002}相差35°以内的平面{002}和3个平面{103}，{014}和{015}的习惯平面比为55％以上，总和 根据位置的这四个平面的强度比的总和为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US20070074790A1
公开(公告)日：2007-04-05
申请号：US10575888
申请日：2004-10-14
申请人： Yasuhiro Yamakoshi , Ryo Suzuki
发明人： Yasuhiro Yamakoshi , Ryo Suzuki
IPC分类号： C22C19/03
CPC分类号： C23C14/3414 , C22C19/03
摘要： The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.
摘要翻译： 本发明涉及包含1至30原子％的Cu的镍合金溅射靶; 2〜25at％的选自V，Cr，Al，Si，Ti和Mo中的至少一种元素; 残留的Ni和不可避免的杂质，以抑制焊料凸块与衬底层或衬垫之间的Sn扩散。 提供了一种用于形成与无铅Sn焊料或Sn-Pb焊料凸块具有优异润湿性的阻挡层的镍合金溅射靶和镍合金薄膜，并且能够抑制作为焊接成分的Sn的扩散并有效地防止 在诸如半导体晶片或电子电路的基板或其上形成的布线或电极的基板层或焊盘上形成无铅Sn焊料或Sn-Pb焊料凸块时与基板层的反应。
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