-
1.发明授权Reduced-projection exposure system with chromatic aberration correction system including diffractive lens such as holographic lens 失效具有色差校正系统的减少投影曝光系统，包括全息透镜等衍射透镜
公开(公告)号：US5324953A
公开(公告)日：1994-06-28
申请号：US12775
申请日：1993-02-03
CPC分类号： G03F9/70 , G02B27/0037 , G02B27/4211 , G02B27/4222 , G02B5/32
摘要： A novel exposure system includes a reduced-projection lens optimized for a predetermined single exposure wavelength and a chromatic aberration correction system for TTL (Through The Lens) alignment with broadband light. The correction system includes a holographic lens which dispersion has a negative number in contrast to a conventional glass lens which has a positive dispersion number. By employing a holographic lens, the total optical length of an alignment system can be made short enough to avoid the necessity of installing a mirror therein, thus realizing a highly accurate alignment system.
摘要翻译： 一种新颖的曝光系统包括针对预定的单一曝光波长优化的缩小投影透镜和用于与宽带光进行TTL（透镜））对准的色差校正系统。 校正系统包括与具有正色散数的常规玻璃透镜相反的色散具有负数的全息透镜。 通过采用全息透镜，可以使对准系统的总光学长度足够短以避免在其中安装反射镜，从而实现高精度的对准系统。
-
公开(公告)号：US4819033A
公开(公告)日：1989-04-04
申请号：US113514
申请日：1987-10-28
CPC分类号： G03F7/70558 , G03F7/2006 , G03F7/70041 , G03F7/70058
摘要： An illumination apparatus is disclosed which is suitable for use in a projection/exposure system for projecting an image of a circuit pattern of a reticle on a semiconductor wafer through a projection lens. The illumination apparatus includes an excimer laser for emitting a pulsed laser beam, an optical system for illuminating the reticle with a plurality of laser pulses emitted from the excimer laser so that laser pulses having passed through the reticle impinge on the semiconductor wafer in different directions through the projection lens, and a light intensity control device for controlling the light intensity of each of the laser pulses so that the laser pulses equally contribute to the reaction of a light sensitive material which is provided on the semiconductor wafer, with light.
摘要翻译： 公开了一种适用于投影/曝光系统的照明装置，用于通过投影透镜在半导体晶片上投射标线片的电路图案的图像。 照明装置包括用于发射脉冲激光束的准分子激光器，用于从准分子激光器发射的多个激光脉冲照射标线片的光学系统，使得已经穿过掩模版的激光脉冲以不同方向穿过半导体晶片 投影透镜和用于控制每个激光脉冲的光强度的光强度控制装置，使得激光脉冲同样有助于设置在半导体晶片上的光敏材料与光的反应。
-
公开(公告)号：US4993837A
公开(公告)日：1991-02-19
申请号：US301962
申请日：1989-01-25
IPC分类号： G01B11/00 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
CPC分类号： G03F9/70
摘要： A method and a system for pattern detection are disclosed in which a laser beam high in directivity is emitted from a laser beam source, the laser beam emitted from the laser beam source is irradiated on an uneven pattern to be detected on an object, the light component of a frequency corresponding to the cut-off frequency of an objective lens is removed from the light reflected from the object when an image of the pattern on the object is formed through an objective lens, the optical image thus formed is received by a photoelectric converting device for producing a signal waveform representing the pattern free of a signal of the frequency corresponding to the cut-off frequency, and the pattern is detected from a signal produced from the photoelectric converting device.
摘要翻译： 公开了一种用于图案检测的方法和系统，其中从激光束源发射高方向性的激光束，从激光束源发射的激光束照射在待检测物体上的不均匀图案上，光 当通过物镜形成物体上的图案的图像时，从物体反射的光中除去与物镜的截止频率相对应的频率的分量，由此形成的光学图像由光电 用于产生表示没有与截止频率相对应的频率的信号的模式的信号波形的转换装置，并且根据从光电转换装置产生的信号检测图案。
-
公开(公告)号：US06335146B1
公开(公告)日：2002-01-01
申请号：US09542071
申请日：2000-04-03
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F700
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.
摘要翻译： 半导体器件的制造方法包括以下步骤：从光源发射准分子激光，形成特定形状的准分子激光器，照射具有特定形状的准分子激光器的移相器方法的掩模上的图案，以及曝光 具有通过掩模的准分子激光器的晶片上的抗蚀剂。 显影晶片上的抗蚀剂，蚀刻晶片以形成图案。
-
公开(公告)号：US4795261A
公开(公告)日：1989-01-03
申请号：US944524
申请日：1986-12-22
CPC分类号： G03F9/7076
摘要： A reduction projection type aligner in a reduction projection exposing device for exposing a circuit pattern on a mask through a reduction projection lens onto a wafer by the step and repeat of the wafer, which comprises: a light source for irradiating coherent irradiation light, a reflection mirror for reflecting the coherent irradiation light irradiated from the light source, a detection optical system for detecting an interference pattern by optically causing interference between an alignment pattern reflection light obtained by entering the coherent irradiation light irradiated from the light source through the reduction projection lens to the alignment pattern portion of the wafer, which is then reflected at the alignment pattern portion and then passed through the reduction projection lens and a reflection light reflected at the reflection mirror, and means for aligning a mask and a wafer relatively by detecting the position of the wafer by the video image signals in the interference pattern detected by the detection optical system.
摘要翻译： 一种还原投影型对准器，用于通过晶片的步骤和重复将通过还原投影透镜将还原投影透镜上的电路图案曝露在晶片上的还原投影曝光装置中，包括：用于照射相干照射光的光源，反射 用于反射从光源照射的相干照射光的反射镜;检测光学系统，用于通过光学地引起通过将从光源经过还原投影透镜照射的相干照射光进入的对准图案反射光之间的干涉，检测干涉图案， 晶片的对准图案部分然后在对准图案部分反射然后通过还原投影透镜和在反射镜处反射的反射光，以及用于通过检测掩模和晶片的位置相对地对准掩模和晶片的位置 晶片由视频信号在干涉中 检测光学系统检测到的图案。
-
公开(公告)号：US4668089A
公开(公告)日：1987-05-26
申请号：US684292
申请日：1984-12-20
CPC分类号： G03F9/7049
摘要： An exposure apparatus comprises a light source, a mask plate having an exposure pattern area section and an alignment/reflection area section, a projection lens, a movable stage for holding a workpiece having a workpiece alignment mark, an alignment control and a driver for the movable stage. Before the exposure pattern area section is illuminated by the light source to be projected through the projection lens onto the workpiece, the workpiece is properly aligned with the mask. Alignment between the mask plate and the workpiece is performed by the effective use of the alignment/reflection area section specifically arranged and having a specific structure. The alignment/reflection area section is on that surface of the mask plate which does not face the light source and includes a reflection portion for conducting light from another light source to the workpiece and conducting light scattered from the workpiece and passing through the projection lens to the alignment control and a mask alignment mark portion of providing, when illuminated, an image of the mask alignment mark portion to the alignment control so that it detects the positional relation between the mask alignment mark portion and the workpiece alignment mark and produces a control signal for achieving alignment between the mask plate and the workpiece.
摘要翻译： 曝光装置包括光源，具有曝光图案区域部分和对准/反射区域部分的掩模板，投影透镜，用于保持具有工件对准标记的工件的可动台，对准控制和用于 活动舞台。 在通过投影透镜投射到工件上的光源照射曝光图案区域部分之前，工件与掩模正确对准。 掩模板与工件之间的对准通过有效地使用具体排列并具有特定结构的对准/反射区域部分进行。 对准/反射区域在掩模板的不面向光源的表面上，并且包括用于将来自另一光源的光传导到工件的反射部分，并且传导从工件散射的光并通过投影透镜到 对准控制和掩模对准标记部分，当照明时，将掩模对准标记部分的图像提供给对准控制，使得其检测掩模对准标记部分和工件对准标记之间的位置关系，并产生控制信号 以实现掩模板和工件之间的对准。
-
公开(公告)号：US06485891B1
公开(公告)日：2002-11-26
申请号：US09542072
申请日：2000-04-03
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F720
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.
摘要翻译： 一种半导体器件的制造方法，包括以下步骤：从光源发射准分子激光器，用从光源发射的准分子激光器照射掩模上的图案，并通过过滤器，将抗蚀剂暴露在基板上 半导体与准分子激光器通过掩模，并且根据暴露于准分子激光器的抗蚀剂的一部分在衬底上形成图案。
-
公开(公告)号：US4676637A
公开(公告)日：1987-06-30
申请号：US790475
申请日：1985-10-23
申请人： Sachio Uto , Masataka Shiba , Yoshitada Oshida
发明人： Sachio Uto , Masataka Shiba , Yoshitada Oshida
IPC分类号： H01L21/027 , B65G1/00 , G01N21/21 , G01N21/88 , G01N21/94 , G01N21/956 , G03F1/84 , G03F7/20 , H01L21/30 , H01L21/66 , G01N21/00
CPC分类号： G03F7/70741 , G01N21/94 , G03F7/70866 , G01N2021/9563 , G01N21/21
摘要： A plurality of substrate assemblies each including a substrate such as a reticle or photomask used for exposure and frames, mounted to the opposite surfaces of the substrate, to which foreign particle deposition preventive films are applied are stored in a magazine. By using a transport unit, a substrate assembly is taken out of the magazine, transported from the magazine to a mask table disposed at an exposure position and set at the mask table. A foreign particle detector is provided near the transport unit to optically detect foreign particles present on the foreign particle deposition preventive film of the substrate assembly. The substrate assembly set at the mask table is aligned to a wafer. A light beam is irradiated on the substrate assembly aligned relative to the wafer and a circuit pattern formed on the substrate is projected upon the wafer through a projection optical system to expose the wafer to the light beam through the circuit pattern.
摘要翻译： 多个基板组件，其各自包括安装到基板的相反表面上的诸如用于曝光的掩模版或光掩模的基板和施加有外来颗粒沉积预防膜的相对表面的基板组件。 通过使用传送单元，将基板组件从盒中取出，从盒传送到设置在曝光位置并设置在掩模台上的掩模台。 在输送单元附近设有异物检测器，以光学检测存在于基板组件的异物颗粒沉积防止膜上的异物。 设置在掩模台上的基板组件与晶片对准。 将光束照射在相对于晶片对准的基板组件上，并且通过投影光学系统将形成在基板上的电路图案投影到晶片上，以通过电路图案将晶片暴露于光束。
-
公开(公告)号：US07598020B2
公开(公告)日：2009-10-06
申请号：US11117492
申请日：2005-04-29
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： H01L21/00
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.
摘要翻译： 一种半导体器件的制造方法，包括以下步骤：通过物镜将半导体器件的基板上的光图案投射到半导体器件的基板上，使其抗蚀剂曝光，使由光图形曝光的抗蚀剂显影形成 具有抗蚀剂的晶片图案，并且蚀刻其上形成有抗蚀剂的晶片图案的基板。 在曝光的步骤中，投射在基板上的光图案由从环形光源发射并通过具有移相器的掩模的准分子激光形成。
-
公开(公告)号：US07277155B2
公开(公告)日：2007-10-02
申请号：US11117447
申请日：2005-04-29
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.
摘要翻译： 一种半导体器件的制造方法，包括以下步骤：通过将半导体器件的衬底上的第一光图案投射到通过第一掩模通过光而形成的第一光图案，使涂覆在半导体器件的衬底上的抗蚀剂曝光， 并通过在基板上投射第二光图案来曝光抗蚀剂，第二光图案是通过使光通过第二掩模而形成的。 在通过投影第二光图案使抗蚀剂曝光的步骤中，第二光图案由具有环形的准分子激光形成并通过第二掩模。
-
-
-
-
-
-
-
-
-
搜索结果
43 条记录 (耗时 0.021 秒)