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公开(公告)号：US08546786B2
公开(公告)日：2013-10-01
申请号：US13344680
申请日：2012-01-06
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译： 非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个 电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。 电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。
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公开(公告)号：US20120104340A1
公开(公告)日：2012-05-03
申请号：US13344680
申请日：2012-01-06
IPC分类号： H01L45/00
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译： 非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个 电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。 电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。
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公开(公告)号：US08115245B2
公开(公告)日：2012-02-14
申请号：US12554581
申请日：2009-09-04
IPC分类号： H01L29/788
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译： 非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构件，并且包括穿过所述多个电介质膜的多个电极膜和所述多个电极膜沿所述多个电极膜的堆叠方向 电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。 电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。
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公开(公告)号：US20100078622A1
公开(公告)日：2010-04-01
申请号：US12554581
申请日：2009-09-04
IPC分类号： H01L27/115 , H01L45/00 , H01L21/8247
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译： 非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个 电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。 电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。
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公开(公告)号：US07986000B2
公开(公告)日：2011-07-26
申请号：US12564349
申请日：2009-09-22
申请人： Makoto Mizukami , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
发明人： Makoto Mizukami , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is formed on a SOI substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the buried oxide film, the semiconductor substrate having a first conductive type, the semiconductor layer having a second conductive type, wherein the buried oxide film has a first opening opened therethrough for communicating the semiconductor substrate with the semiconductor layer, the semiconductor layer is arranged to have a first buried portion buried in the first opening in contact with the semiconductor substrate and a semiconductor layer main portion positioned on the first buried portion and on the buried oxide film, the semiconductor substrate has a connection layer buried in a surface of the semiconductor substrate and electrically connected to the first buried portion in the first opening, the connection layer having the second conductive type, and the semiconductor device includes a contact electrode buried in a second opening, a side surface of the contact electrode being connected to the semiconductor layer main portion, a bottom surface of the contact electrode being connected to the connection layer, the second opening passing through the semiconductor layer main portion and the buried oxide film, and the second opening reaching a surface portion of the connection layer.
摘要翻译： 半导体器件形成在具有半导体衬底的SOI衬底上，形成在半导体衬底上的掩埋氧化膜以及形成在掩埋氧化膜上的半导体层，该半导体衬底具有第一导电类型，该半导体层具有第二导电型 导电型，其中所述掩埋氧化物膜具有通过其开口的第一开口，用于使所述半导体衬底与所述半导体层连通，所述半导体层被布置为具有埋在所述第一开口中的与所述半导体衬底接触的第一掩埋部分和半导体层 主要部分位于第一掩埋部分和掩埋氧化膜上，半导体衬底具有埋在半导体衬底的表面中并与第一开口中的第一掩埋部分电连接的连接层，连接层具有第二导电 类型，并且半导体器件包括接触电极 阴极埋入第二开口中，接触电极的侧表面连接到半导体层主体部分，接触电极的底表面连接到连接层，第二开口穿过半导体层主体部分和埋设 氧化膜，第二开口到达连接层的表面部分。
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公开(公告)号：US20100117135A1
公开(公告)日：2010-05-13
申请号：US12564349
申请日：2009-09-22
申请人： Makoto MIZUKAMI , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
发明人： Makoto MIZUKAMI , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is formed on a SOI substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the buried oxide film, the semiconductor substrate having a first conductive type, the semiconductor layer having a second conductive type, wherein the buried oxide film has a first opening opened therethrough for communicating the semiconductor substrate with the semiconductor layer, the semiconductor layer is arranged to have a first buried portion buried in the first opening in contact with the semiconductor substrate and a semiconductor layer main portion positioned on the first buried portion and on the buried oxide film, the semiconductor substrate has a connection layer buried in a surface of the semiconductor substrate and electrically connected to the first buried portion in the first opening, the connection layer having the second conductive type, and the semiconductor device includes a contact electrode buried in a second opening, a side surface of the contact electrode being connected to the semiconductor layer main portion, a bottom surface of the contact electrode being connected to the connection layer, the second opening passing through the semiconductor layer main portion and the buried oxide film, and the second opening reaching a surface portion of the connection layer.
摘要翻译： 半导体器件形成在具有半导体衬底的SOI衬底上，形成在半导体衬底上的掩埋氧化膜以及形成在掩埋氧化膜上的半导体层，该半导体衬底具有第一导电类型，该半导体层具有第二导电型 导电型，其中所述掩埋氧化物膜具有通过其开口的第一开口，用于使所述半导体衬底与所述半导体层连通，所述半导体层被布置为具有埋在所述第一开口中的与所述半导体衬底接触的第一掩埋部分和半导体层 主要部分位于第一掩埋部分和掩埋氧化膜上，半导体衬底具有埋在半导体衬底的表面中并与第一开口中的第一掩埋部分电连接的连接层，连接层具有第二导电 类型，并且半导体器件包括接触电极 阴极埋入第二开口中，接触电极的侧表面连接到半导体层主体部分，接触电极的底表面连接到连接层，第二开口穿过半导体层主体部分和埋设 氧化膜，第二开口到达连接层的表面部分。
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公开(公告)号：US08406501B2
公开(公告)日：2013-03-26
申请号：US12457842
申请日：2009-06-23
CPC分类号： G06T7/0004 , F28D1/05366 , F28F2200/00 , G01N21/8851 , G06T2207/30136
摘要： A method and system for appearance inspection of a core of a heat exchanger provided with fins and tubes, performing averaging and dynamic binarization on the imaging data to extract an image of only a tube, then calculating, with respect to the extracted tube image, a center axis across a long direction of the tube comprised of the center coordinates of the tube width direction, comparing the discovered center axis with a reference value to find the maximum displacement across the long direction of the tube, and judging the tube is a defect when the maximum displacement is greater than a predetermined threshold.
摘要翻译： 对具有翅片和管的热交换器的芯的外观检查的方法和系统，对成像数据进行平均化和动态二值化以提取仅管的图像，然后相对于提取的管图像计算 中心轴跨越管宽度方向的中心坐标组成的管的长方向，将发现的中心轴与参考值进行比较，以找出跨管的长方向的最大位移，并且判断管是缺陷， 最大位移大于预定阈值。
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公开(公告)号：US08324597B2
公开(公告)日：2012-12-04
申请号：US12848340
申请日：2010-08-02
申请人： Atsushi Fukumoto , Isao Ichimura , Shinichi Kai , Toshio Watanabe , Yuji Segawa
发明人： Atsushi Fukumoto , Isao Ichimura , Shinichi Kai , Toshio Watanabe , Yuji Segawa
IPC分类号： H05B33/00
CPC分类号： G01N21/6452 , B01L3/502715 , B01L2300/0654 , B01L2300/0816 , B01L2300/0829 , G01N21/05 , G01N2021/0346 , G01N2021/6419 , G01N2201/0627
摘要： Disclosed herein is a light detection device including, at least, a substrate provided with a plurality of detection regions where to perform detection of fluorescent light emitted from the inside of a sample upon irradiation of the sample with light, a light irradiation section operable to perform the irradiation with light, an optical control section configured to irradiate the detection regions with the light radiated from the light irradiation section, and a light detection section operable to detect the fluorescent light.
摘要翻译： 本发明公开了一种光检测装置，至少包括设置有多个检测区域的基板，其中，在用光照射样品时，从样品内部发出的荧光进行检测;光照射部分，其可操作以执行 光照射，被配置为用从所述光照射部照射的光照射所述检测区域的光学控制部，以及可操作以检测所述荧光的光检测部。
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公开(公告)号：US07684097B2
公开(公告)日：2010-03-23
申请号：US11862373
申请日：2007-09-27
申请人： Atsushi Fukumoto , Mikio Sugiki , Kenji Tanaka , Masaaki Hara , Kazuyuki Hirooka
发明人： Atsushi Fukumoto , Mikio Sugiki , Kenji Tanaka , Masaaki Hara , Kazuyuki Hirooka
CPC分类号： G11B7/0065 , G03H2223/13 , G03H2225/31 , G11B7/1367
摘要： A recording apparatus performing at least recording with respect to a hologram recording medium is disclosed. The recording medium includes: a light emitting means for emitting light to be radiated with respect to the hologram recording medium set at a prescribed position; a spatial light modulation means configured to be able to generate reference light and signal light to be radiated to the hologram recording medium by performing light intensity modulation to incident light in the unit of pixels; a phase modulation means for performing phase modulation to radiated light from the spatial light modulation means; and an optical system configured to guide light emitted from the light emitting means with respect to the hologram recording medium through the spatial modulation means and the phase modulation means.
摘要翻译： 公开了至少对全息图记录介质进行记录的记录装置。 记录介质包括：发光装置，用于发射相对于设置在规定位置的全息图记录介质辐射的光; 空间光调制装置，其被配置为能够通过对以像素为单位的入射光进行光强度调制来产生将被照射到全息图记录介质的参考光和信号光; 相位调制装置，用于对来自空间光调制装置的辐射光进行相位调制; 以及光学系统，被配置为通过空间调制装置和相位调制装置引导从发光装置相对于全息图记录介质发射的光。
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公开(公告)号：US20100027872A1
公开(公告)日：2010-02-04
申请号：US12457842
申请日：2009-06-23
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , F28D1/05366 , F28F2200/00 , G01N21/8851 , G06T2207/30136
摘要： A method and system for appearance inspection of a core of a heat exchanger provided with fins and tubes, performing averaging and dynamic binarization on the imaging data to extract an image of only a tube, then calculating, with respect to the extracted tube image, a center axis across a long direction of the tube comprised of the center coordinates of the tube width direction, comparing the discovered center axis with a reference value to find the maximum displacement across the long direction of the tube, and judging the tube is a defect when the maximum displacement is greater than a predetermined threshold.
摘要翻译： 对具有翅片和管的热交换器的芯的外观检查的方法和系统，对成像数据进行平均化和动态二值化以提取仅管的图像，然后相对于提取的管图像计算 中心轴跨越管宽度方向的中心坐标组成的管的长方向，将发现的中心轴与参考值进行比较，以找出跨管的长方向的最大位移，并且判断管是缺陷， 最大位移大于预定阈值。
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