公开(公告)号：US20050135020A1

公开(公告)日：2005-06-23

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2c,X3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， X 1，X 3是选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种 ，Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W中的至少一种， Re，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < = a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US06917492B2

公开(公告)日：2005-07-12

申请号：US10611224

申请日：2003-06-27

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49034

摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0

摘要翻译： 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素， 磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0

公开(公告)号：US06950333B2

公开(公告)日：2005-09-27

申请号：US10695731

申请日：2003-10-24

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita ,  Yoshio Kawashima

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita ,  Yoshio Kawashima

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22

CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/228

摘要： A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.

摘要翻译： 本发明的磁存储器包括两层或多层存储层和两层或多层在层的厚度方向上层叠的隧道层。 两个或更多个存储器层串联电连接。 一组第一层包括从两个或更多个存储器层中选择的至少一个层。 一组第二层包括从两个或更多个存储器层中选择的至少一个层。 由第一层组中的磁化反转引起的电阻变化与由第二层组中的磁化反转引起的电阻变化不同。

公开(公告)号：US07079361B2

公开(公告)日：2006-07-18

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， （X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种 ，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US06954372B2

公开(公告)日：2005-10-11

申请号：US10250811

申请日：2002-01-18

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/66 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L29/66984

摘要： A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.

摘要翻译： 一种磁存储器件，包括磁阻元件，用于产生改变磁阻元件的电阻值的磁通的导线以及磁通通过的至少一个铁磁部件。 铁磁构件在磁通量通过磁阻元件的位置处形成磁隙。 在与磁隙平行的方向上测量的磁阻元件的长度小于或等于磁隙长度的两倍。 由铁磁部件中的磁通量追踪的路径的长度小于或等于1.0μm。 路径的长度也大于或等于铁磁构件的厚度的五倍和/或大于或等于铁磁构件沿导线方向除以五的长度。

公开(公告)号：US06878979B2

公开(公告)日：2005-04-12

申请号：US10258313

申请日：2002-01-18

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/66 ,  H01L31/119

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L29/66984

摘要： A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor.

摘要翻译： 可以用电压驱动的自旋开关。 该自旋开关包括：铁磁材料; 与铁磁材料磁耦合的磁半导体; 磁耦合到磁性半导体的反铁磁材料; 和通过绝缘体连接到磁性半导体的电极。 电极的电位变化导致磁性半导体在铁磁性状态和顺磁性状态之间产生可逆的转变。 当磁性半导体变为铁磁性状态时，铁磁材料由于与磁性半导体的磁耦合而在预定方向上被磁化。

公开(公告)号：US06861940B2

公开(公告)日：2005-03-01

申请号：US10732053

申请日：2003-12-10

申请人： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

发明人： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC分类号： G01R33/09 ,  H01F10/32 ,  H01C7/04

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272

摘要： A magnetoresistive element of the present invention includes a multilayer structure that includes a non-magnetic layer (3) and a pair of ferromagnetic layers (1, 2) stacked on both sides of the non-magnetic layer (3). A resistance value differs depending on a relative angle between the magnetization directions of the ferromagnetic layers (1, 2) at the interfaces with the non-magnetic layer (3). The composition of at least one of the ferromagnetic layers (1, 2) in a range of 2 nm from the interface with the non-magnetic layer (3) is expressed by (MxOy)1-zZz, where Z is at least one element selected from the group consisting of Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au, M is at least one element selected from the group consisting of elements other than Z and O and includes a ferromagnetic metal, and x, y, and z satisfy 0.33

摘要翻译： 本发明的磁阻元件包括层叠在非磁性层（3）的两侧的非磁性层（3）和一对铁磁体层（1,2）的多层结构体。 电阻值根据与非磁性层（3）的界面处的铁磁层（1,2）的磁化方向之间的相对角度而不同。 从与非磁性层（3）的界面在2nm范围内的铁磁层（1,2）中的至少一个的组成由（M×Oy）1-zZz表示，其中Z是至少一个元素 选自由Ru，Os，Rh，Ir，Pd，Pt，Cu，Ag和Au组成的组中的至少一种元素，M是选自Z和O以外的元素中的至少一种元素，并且包括铁磁性金属，以及 x，y和z满足0.33

公开(公告)号：US06567246B1

公开(公告)日：2003-05-20

申请号：US09516552

申请日：2000-03-01

申请人： Hiroshi Sakakima ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yasuhiro Kawawake ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

发明人： Hiroshi Sakakima ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yasuhiro Kawawake ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3925 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/18 ,  H01F41/302 ,  H01L43/08

摘要： A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.

摘要翻译： 磁阻效应元件包括自由层，其中其磁化方向响应于外部磁场容易旋转，第一非磁性层和设置在与第一非磁性层的自由层相对的一侧上的第一被钉扎层 非磁性层，其中第一被钉扎层的磁化方向响应于外部磁场而不容易旋转。 第一被钉扎层和自由层中的至少一个包括与第一非磁性层接触的第一金属磁性膜和第一氧化物磁性膜。

公开(公告)号：US06597547B1

公开(公告)日：2003-07-22

申请号：US09162300

申请日：1998-09-28

申请人： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita ,  Hiroshi Sakakima

发明人： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita ,  Hiroshi Sakakima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/10

摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.

摘要翻译： 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包括α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。

公开(公告)号：US06258470B1

公开(公告)日：2001-07-10

申请号：US09228703

申请日：1999-01-12

申请人： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/32 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121

摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8

摘要翻译： 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8