摘要:
A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
摘要翻译:磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由(M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B,C,N,O和P中的至少一种元素。这里,M是Fe L是选自Pt,Pd,Ir和Rh中的至少一种元素,R是具有较低自由能以与非金属元素形成化合物的元素, 磁性层是选自B,C,N,O和P中的至少一种,除了组合物中包含的任何其它元素为M或L,以及a,b,c,x,y和 z满足a + b + c = 100,a> = 30,x + y = 100,0
摘要:
The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2c,X3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
摘要翻译:本发明提供了一种磁阻(MR)元件,它具有优异的MR比和热稳定性,并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层, / SUB>。 这里,M是选自Fe,Co和Ni中的至少一种,X由X 1表示,X 2, X 1,X 3是选自Cu,Ru,Rh,Pd,Ag,Os,Ir中的至少一种 ,Pt和Au,X 2是选自Al,Sc,Ti,V,Cr,Mn,Ga,Ge,Y,Zr,Nb,Mo,Hf,Ta,W中的至少一种, Re,Zn和镧系元素,X 3是选自Si,B,C,N,O,P和S中的至少一种),a,b,c和d满足0.05 < = a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20,a = b + c + d。
摘要:
The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
摘要翻译:本发明提供了一种磁阻(MR)元件,它具有优异的MR比和热稳定性,并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层, / SUB>。 这里,M是选自Fe,Co和Ni中的至少一种,X由X 1表示,X 2, (X 1以上)选自Cu,Ru,Rh,Pd,Ag,Os,Ir中的至少一种, Pt和Au,X 2是选自Al,Sc,Ti,V,Cr,Mn,Ga,Ge,Y,Zr,Nb,Mo,Hf,Ta,W,Re中的至少一种 ,Zn和镧系元素,X 3是选自Si,B,C,N,O,P和S中的至少一种),a,b,c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20,a = b + c + d。
摘要:
A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.
摘要:
A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.
摘要:
A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor.
摘要:
A magnetoresistive element of the present invention includes a multilayer structure that includes a non-magnetic layer (3) and a pair of ferromagnetic layers (1, 2) stacked on both sides of the non-magnetic layer (3). A resistance value differs depending on a relative angle between the magnetization directions of the ferromagnetic layers (1, 2) at the interfaces with the non-magnetic layer (3). The composition of at least one of the ferromagnetic layers (1, 2) in a range of 2 nm from the interface with the non-magnetic layer (3) is expressed by (MxOy)1-zZz, where Z is at least one element selected from the group consisting of Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au, M is at least one element selected from the group consisting of elements other than Z and O and includes a ferromagnetic metal, and x, y, and z satisfy 0.33
摘要:
A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.
摘要:
A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.
摘要:
The present invention provides a magnetoresistive element that can suppress the characteristic degradation even after high-temperature heat treatment, specifically at 400° C. to 450° C. This element is manufactured by a method that includes the following processes in the indicated order: a film formation process for forming at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer on a substrate; a preheat process at 330° C. to 380° C. for not less than 60 minutes; and a heat treatment process at 400° C. to 450° C. This element has a resistance value that changes with a change in relative angle formed by the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer.