摘要:
Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.
摘要:
First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing.In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.
摘要:
Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number.In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.
摘要:
A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要:
The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.
摘要:
An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
摘要:
An insulating film is formed on a semiconductor substrate, and the insulating film on that part of the semiconductor substrate where an emitter is to be formed, is removed to expose the surface of the above part. A polycrystalline or amorphous silicon film is deposited on the entire surface, and then irradiated with a laser beam to convert that portion of the polycrystalline or amorphous silicon film which is deposited on the surface of the semiconductor substrate without interposing the insulating film therebetween, into a single crystal of silicon, thereby forming a stacked emitter.
摘要:
A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities.Thus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.
摘要:
A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed.Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.