公开(公告)号：US06472296B2

公开(公告)日：2002-10-29

申请号：US09912343

申请日：2001-07-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 一种制造半导体层的方法，该方法是通过将原料气体引入放电室并向室内供给高频电力，以通过放电来分解原料气体，由此在放电室内的基板上形成半导体层，该方法包括 提供至少非常高频（VHF）的高频功率作为高频功率的步骤; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US06495392B2

公开(公告)日：2002-12-17

申请号：US09911172

申请日：2001-07-23

申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2100

CPC分类号： H01L31/075 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode.

摘要翻译： 一种用于制造半导体器件的方法，诸如包括太阳能电池的光电元件或具有光电转换半导体层的光电传感器的光电元件，其顺序地形成由非单晶硅系列半导体材料构成的p型或n型半导体层 由非单晶硅系列半导体材料构成的i型半导体层和由等离子体CVD在基板上的非单晶硅系半导体材料构成的n型或p型半导体层， 其特征在于，通过使用含硅原料气体的VHF等离子体CVD，在具有阴极的放电室中形成至少一个作为所述i型半导体层的i型半导体，其中，功率的VHF功率 是分解100％的所述含硅原料气体所需的VHF功率的两倍或更少被施加到所述阴极。

公开(公告)号：US06287943B1

公开(公告)日：2001-09-11

申请号：US09363825

申请日：1999-07-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention provides a process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 本发明提供一种通过将原料气体引入放电室并向室内供给高频电力以通过放电分解原料气体从而在放电室内的基板上形成半导体层来制造半导体层的方法， 过程包括以下步骤：提供至少非常高频（VHF）的高频功率作为高频功率; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US06436797B1

公开(公告)日：2002-08-20

申请号：US09578906

申请日：2000-05-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajimaa

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajimaa

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  C23C16/24 ,  C23C16/545

摘要： A film-forming apparatus for forming a non-single crystalline silicon series semiconductor film on a substrate in a film-forming space provided in a vacuum chamber using a very high frequency power supplied through a high frequency power supply means comprising a bar-like shaped electrode, wherein said bar-like shaped electrode is arranged such that the longitudinal direction thereof intersects a direction for said substrate to be moved, and a length of said film-forming space relative to the direction for said substrate to be moved is in a range of from {fraction (1/16)} to ½ of a wavelength of said very high frequency power supplied in said film-forming space. A film-forming method for forming a non-single crystalline silicon series semiconductor film on a substrate using said film-forming apparatus.

摘要翻译： 一种用于在设置在真空室中的成膜空间中的基板上形成非单晶硅系半导体膜的成膜装置，其使用通过高频电源装置提供的非常高频率的功率，所述高频电源包括棒形 电极，其中所述棒状电极被布置成使得其纵向方向与所述基板移动的方向相交，并且所述成膜空间相对于要移动的所述基板的方向的长度在一定范围内 从{分数（1/16）}到在所述成膜空间中提供的所述非常高频率的波长的1/2。 一种使用所述成膜装置在基片上形成非单晶硅系半导体膜的成膜方法。

公开(公告)号：US5769963A

公开(公告)日：1998-06-23

申请号：US697783

申请日：1996-08-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/0352

CPC分类号： H01L31/076 ,  H01L31/03682 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.

摘要翻译： 一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第 第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸 第一半导体层中的晶体在第一电极侧变化较小。 这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

公开(公告)号：US5720826A

公开(公告)日：1998-02-24

申请号：US657066

申请日：1996-05-29

申请人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.

摘要翻译： 提供适用于实际使用，成本低，可靠性高，光电转换效率高的光电元件及其制造方法。 在具有非单晶半导体层叠的光电元件中，在第一导电型半导体层上层叠至少i型半导体层和第二导电型半导体层，第二导电型半导体层具有层 A通过使用至少化合价电子控制剂和主要构成元素的CVD工艺将i型半导体层的表面暴露于含有价电子控制剂和沉积在层A上的层B的等离子体 i型半导体层。

公开(公告)号：US07211708B2

公开(公告)日：2007-05-01

申请号：US09822191

申请日：2001-04-02

申请人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

发明人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

IPC分类号： A62D3/00 ,  B08B15/00 ,  B08B5/00 ,  H05H1/03 ,  H05H1/16 ,  H05H1/48

CPC分类号： H01J37/32844 ,  C23C14/564 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

摘要翻译： 化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应 不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

公开(公告)号：US20070169890A1

公开(公告)日：2007-07-26

申请号：US11694889

申请日：2007-03-30

申请人： TAKESHI SHISHIDO ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

发明人： TAKESHI SHISHIDO ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32844 ,  C23C14/564 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

摘要翻译： 化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应 不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

公开(公告)号：US06877458B2

公开(公告)日：2005-04-12

申请号：US09797566

申请日：2001-03-05

申请人： Hiroyuki Ozaki ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

发明人： Hiroyuki Ozaki ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/5096 ,  C23C16/545

摘要： To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.

摘要翻译： 为了提供一种用于形成沉积膜的装置，其是平行板电极型CVD装置，放电容器容纳在其中流动的材料气体并从其中排出空气，借助于其中产生的等离子体分解原料气体，并沉积 基板上的材料气体排出装置的排气口的横向方向上的开口比平行板电极宽。 这种结构减少了沉积膜形成过程期间材料气体的停滞区域，并且控制副产物的形成，以使膜在质量和厚度上均匀。

公开(公告)号：US06794275B2

公开(公告)日：2004-09-21

申请号：US10113675

申请日：2002-04-02

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

IPC分类号： H01L21365

CPC分类号： H01L31/1804 ,  C23C16/46 ,  C23C16/463 ,  C23C16/505 ,  C23C16/52 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66765 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.

摘要翻译： 在根据本发明的基板上形成硅基膜的方法中，在形成硅基膜时，基板在其厚度方向上具有温度梯度，并使温度梯度使得沉积表面 的衬底具有比背面更高的温度或温度梯度的方向反转。 利用这种结构，本发明提供一种在高沉积速率下具有良好性能的硅基薄膜，并提供包括它的半导体器件。 本发明还提供一种半导体器件，其包括硅基薄膜，其具有良好的粘合性和耐候性，并且可以在短的时间内制造。