摘要:
A sample cooling apparatus capable of cooling and holding samples or wafers at a cryogenic temperature with no vibration or drift with respect to a measurement reference surface is disclosed. In the sample cooling apparatus, a sample holder is arranged in a vacuum vessel mounted on a housing having a table for forming a measurement reference surface to be supported by a thermal insulator. A frame is disposed within the housing to be supported by a first buffer. A refrigerating machine is disposed in the frame to be supported by a second buffer and has a head directed to the vacuum vessel. The cooling head of the refrigerating machine is connected to the sample holder by way of a flexible thermal conduction member.
摘要:
Disclosed is an image capturing device provided with an irradiation unit, an image capturing unit, and a color representation setting unit. The irradiation unit irradiates a subject with infrared rays having different wavelength intensity distributions, the image capturing unit captures images of the subject by the respective infrared rays being reflected by the subject and forming image information indicating the respective images, and the color representation setting unit sets color representation information for representing the respective images, which are indicated by the formed image information, by different plain colors. Also disclosed is an image capturing method for separating infrared rays from a subject into infrared rays having different wavelength intensity distributions, capturing images of the subject by the respective infrared rays having different wavelength intensity distributions, forming image information indicating the respective images, and representing the respective images, which are indicated by the formed image information, by different plain colors.
摘要:
Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.
摘要:
A process for producing cork lines which comprises holding a leader or lers with a pair of metal molds having at the junctional surfaces thereof one or more cavities for forming a float or floats and one or more furrows formed so as to pass through said cavity or cavities for holding said leader or leaders, injecting a molten synthetic resin mixed witha foaming agent into said cavity or cavities to effect molding and foaming of said resin, cooling said metal molds and taking out a flat or floats integrally fixed to said leader or leaders from said metal molds. An apparatus for producing cork lines which comprises an injection molding machine having a pair of metal molds with a cavity or cavities to form a float or floats and with furrows formed so as to pass through said cavity or cavities for holding a leader or leaders on the junctional surfaces of sid metal molds, a device for maintaining said leader or leaders in stretched state between said metal molds and a device for intermittently conveying said leader or leaders in stretched state for a given distance in the longitudinal direction. A cork line thus produced can be used in various fields of industry, especially for fisheries.
摘要:
The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode.
摘要:
A laser illuminator comprising at least one optical diffusion means capable of modifying an optical diffusion condition (3) and at least one optical suppression means for suppressing divergence of light (100), wherein the optical diffusion means and the optical suppression means are disposed along an optical path of a laser beam (6) radiating from a laser source and the laser beam is converted into a diffused and non-divergent light beam (6-2) for illuminating or exciting an object by passing through the optical diffusion means and the optical suppression means.
摘要:
Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.
摘要:
A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light.
摘要:
In order to achieve a photoelectric conversion cell and an array of high sensitivity and high dynamic range, there is a need for a photoelectric conversion cell and an array in which combination of an amplified photoelectric conversion element and a selection element are resistant to external noise, and the combination is resistant to effects from address selection pulse noise at array readout time. In the present invention, in order to solve the problem, a photoelectric conversion cell has been configured with a combination of an amplified photoelectric conversion element (100) and a selection element (10 and the like) which are resistant to external noise, and various means of solution of the combination are provided which are resistant to the effects of address selection pulse noise at array readout time. As a result, a dynamic range of 6 to 7 orders of magnitude for light detection has become possible.
摘要:
Disclosed is an image capturing device having an irradiation unit, an image capturing unit, and a color representation setting unit. The irradiation unit irradiates a subject with infrared rays having different wavelength intensity distributions, the image capturing unit captures images of the subject by the respective infrared rays having different wavelength distributions which are reflected by the subject, and forms image information indicating the respective images, and the color representation setting unit sets color representation information for representing the respective images, which are indicated by the formed image information, by different plain colors. Also disclosed is an image capturing method for separating infrared rays from a subject into infrared rays having different wavelength intensity distributions, capturing images of the subject by the respective infrared rays having different wavelength intensity distributions, forming image information indicating the respective images, and representing the respective images, which are indicated by the formed image information.