摘要:
A semiconductor image pickup device includes a pixel array having pixels arranged in a matrix. Each pixel includes a photodiode that converts an optical signal into an electrical signal, and a transistor connected to a charge accumulation section of the photodiode. A buffer is additionally provided. This buffer controls the transistor of the pixels using a lower control power supply voltage than a power supply voltage of the pixel array.
摘要:
Each pixel includes first and second photodiodes that are receiving-light detecting elements. The first photodiode applies a first potential according to an amount of light entering into the corresponding pixel. An internal node is electrically coupled with an internal node in another pixel via a resistance component. Hence, the second photodiode applies a second potential according to an average amount of light on the periphery to the corresponding internal node. A pixel signal generating circuit reads out a multiplied result of the first and second potentials as a pixel signal. The pixel signal has an intensity corresponding to the amount of light in the pixel in accordance with a receiving-light sensitivity characteristic (signal amplification factor) that is automatically adjusted based on an average amount of light in a region on the periphery of the pixel.
摘要:
A-MOS devices capable of continuously modulating a gain coefficient &bgr; in accordance with a voltage applied to a control gate provided in addition to a normal gate, are connected in an odd number of stages to configure a ring oscillator. An oscillation circuit can be implemented capable of modulating an oscillation frequency in accordance with the control gate's voltage in a wide range.
摘要:
A product-sum calculation apparatus is provided for cumulatively adding up respective products of first input data and second input data. There is further provided a product-sum calculation unit integrated circuit apparatus including the product-sum calculation apparatus, and a cumulative adder. In the product-sum calculation apparatus, a barrel shifter shifts the first input data by a predetermined number of bits based on the second input data, and an adder adds the shifted data outputted from the barrel shifter and inputted through a first input terminal thereof, and data inputted through a second input terminal thereof. A register temporarily stores data outputted from the adder, outputs a stored data to the adder through the second input terminal of the adder, and outputs the stored data through an output terminal. Further, there is provided a multiplexer for selecting either one of third input data inputted through a first input terminal thereof, and data inputted through a second input terminal thereof. Accordingly, the product-sum calculation apparatus calculates a product of the first input data and the second input data, calculates a sum of a calculated product and the third input data, and outputs a calculated sum from the output terminal.
摘要:
An inverter circuit which is a representative example of the logic circuit includes a p-channel A-MOS transistor and an n-channel transistor. The gain coefficient β of the p-channel A-MOS transistor and n-channel transistor changes according to a voltage on a control gate. The control gate of the p-channel A-MOS transistor and n-channel MOS transistor is connected to an output node of the inverter circuit, and the normal MOS gate is connected to an input node of the inverter circuit. Thus, the ON resistance of the p-channel A-MOS transistor and n-channel transistor is automatically modulated to decrease as the source-drain voltage increases.
摘要:
Arithmetic units are supplied with instructions from a control unit in common through an instruction broadcast bus. Each of the arithmetic units includes a process data input port, an address data input port, a process data output port and an address data output port. Address data appearing on the address ports specify addresses of a local memory. Each of the arithmetic units reads corresponding numeric data from the local memory and executes arithmetic processing in accordance with the instruction supplied from the control unit through a computing element group and a register group. In each arithmetic unit, it is possible to specify addresses of the local memory independently of each other. Each unit include circuitry for omitting an arithmetic operation on data read from the local memory when the read out data is negligible.
摘要:
An extension directed integrated circuit device having a learning function on a Boltzmann model, includes a plurality of synapse representing units arrayed in a matrix to form a rectangle including a first and second triangles on a semiconductor chip, a plurality of neuron representing units and a plurality of educator signal control circuits which are arranged along first and second sides of the rectangle, and a plurality of buffer circuits arranged along third and fourth sides of the rectangle. The first side is opposite to the third side, and the second side is opposite to the fourth side. Axon signal transfer lines and dendrite signal lines are so arranged that the neuron representing units are full-connected in each of the first right triangle the second right triangle. Alternatively, axon signal lines and dendrite signal ines are arranged in parallel with rows and columns of the synapse representing unit matrix, so that the neuron representing units are full-connected in the rectangle. Each synapse representing unit is connected to a pair of axon signal transfer lines and a pair of dendrite signal transfer lines.
摘要:
In a semiconductor device an electric field is controlled in direction or angle relative to a gate, or a channel to adjust a gain coefficient of a transistor. In some embodiments, there are provided a first gate forming a channel region in a rectangle or a parallelogram, and a second gate forming a channel region substantially containing a triangle between the channel region formed by the first gate and each of a source region and a drain region. In some embodiments, there is included a channel region formed by the first gate that is sandwiched by the channel region formed by the second gate, all the channel regions together substantially forming a rectangle or a parallelogram. As such, a semiconductor device allowing a gain coefficient β of an MOS transistor to be modulated by voltage in an analog manner can readily be produced by conventional processing technology and incorporated into any conventional LSIs configured by a CMOS circuit.
摘要:
A self-organizable neural network expressing unit includes a plurality of neuron units electronically expressing nerve cell bodies, and a plurality of synapse expressing units electronically expressing synapses for coupling neuron units through programmed coupling strengths represented by synapse load values, and a control circuit for supplying a pattern of random number data as an educator data. When the pattern of random number data is generated, the neural network expressing unit carries out correction of synapse load values as in a learning mode of operation using the pattern of random number data as an educator data. The memorized internal states in the neural network expressing unit is reinforced based on a faded memory thereof, and the synapse load values are precisely maintained for a long time, resulting in a reliable neural network expressing unit.
摘要:
An extension directed integrated circuit device having a learning function on a Boltzmann model, includes a plurality of synapse representing units arrayed in a matrix, a plurality of neuron representing units, a plurality of educator signal control circuits, and a plurality of buffer circuits. Each synapse representing unit is connected to a pair of axon signal transfer lines and a pair of dendrite signal transfer lines. Each synapse representing unit includes a learning control circuit which derives synapse load change value data in accordance with predetermined learning rules in response to a first axon signal Si and a second axon signal Sj, a synapse load representing circuit which corrects a synapse load in response to the synapse load change valued data and holds the corrected synapse load value Wij, a first synapse coupling operating circuit which derives a current signal indicating a product Wij.multidot.Si from the synapse load Wij and the first axon signal Si and transfers the same to a first dendrite signal line, and a second product signal indicating a product Wij.multidot.Sj from the synapse load Wij and the second axon signal Sj and transfers the same onto a second dendrite signal line.