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公开(公告)号：US20120246761A1
公开(公告)日：2012-09-27
申请号：US13188963
申请日：2011-07-22
申请人： Yen-Hsun Su , Shen-Long Tu , Shih-Hui Chang , Wei-Min Zhang
发明人： Yen-Hsun Su , Shen-Long Tu , Shih-Hui Chang , Wei-Min Zhang
摘要： A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material.
摘要翻译： 提供了制备无机纳米材料的方法。 该方法包括提供包括多个金属离子的第一溶液的步骤; 将第一溶液与表面活性剂混合并加入还原剂以产生第二溶液，其中第二溶液产生从多个金属离子还原的多个金属原子; 并向第二溶液中加入氧化剂以氧化多个金属原子，从而产生多种金属氧化物并形成无机纳米材料。
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公开(公告)号：US09145516B2
公开(公告)日：2015-09-29
申请号：US13188963
申请日：2011-07-22
申请人： Yen Hsun Su , Shen-Lung Tu , Shih-Hui Chang , Wei-Min Zhang , Shih-Wen Tseng , Yun-Chorng Chang
发明人： Yen Hsun Su , Shen-Lung Tu , Shih-Hui Chang , Wei-Min Zhang , Shih-Wen Tseng , Yun-Chorng Chang
摘要： A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material.
摘要翻译： 提供了制备无机纳米材料的方法。 该方法包括提供包括多个金属离子的第一溶液的步骤; 将第一溶液与表面活性剂混合并加入还原剂以产生第二溶液，其中第二溶液产生从多个金属离子还原的多个金属原子; 并向第二溶液中加入氧化剂以氧化多个金属原子，从而产生多种金属氧化物并形成无机纳米材料。
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公开(公告)号：US20180202186A1
公开(公告)日：2018-07-19
申请号：US15792549
申请日：2017-10-24
申请人： Shih-Hui Chang
发明人： Shih-Hui Chang
IPC分类号： E04H15/32
CPC分类号： E04H15/322 , F16G11/14
摘要： A tent wind rope adjusting structure includes: an adjusting plate, having a plate body, with a front section and a rear section of the plate body provided each with a through hole, a side of the adjusting plate is provided with at least a hook, the hook is formed by cutting a notch at a side of the plate body, and having a hook opening and an indent portion; a wind rope, passing through the two through holes of the adjusting plate, with a tail end of the wind rope provided with a rope loop; and an elastic clip buckle, having a press-able rope clipping hole for the wind rope to pass through, to allow the elastic clip buckle to move between a rear section of the wind rope and the adjusting plate.
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公开(公告)号：US06489193B1
公开(公告)日：2002-12-03
申请号：US10040442
申请日：2002-01-09
申请人： Lung Chen , Teng-Feng Wang , Zen-Long Yang , Shih-Hui Chang , Yung-Shin Wang
发明人： Lung Chen , Teng-Feng Wang , Zen-Long Yang , Shih-Hui Chang , Yung-Shin Wang
IPC分类号： H01L218238
CPC分类号： H01L21/823481 , H01L21/762
摘要： A novel process for isolating devices on a semiconductor substrate is disclosed. An isolation layer is first formed over the semiconductor substrate and patterned into at least two isolation mesas on the substrate. Next, a blanket semiconductor layer is formed over the substrate with a thickness sufficient to cover the isolation mesas. The semiconductor layer is subjected to planarization until the isolation mesas are exposed, thus resulting in a semiconductor region between the two isolation mesas to serve as an active region for semiconductor devices.
摘要翻译： 公开了一种在半导体衬底上隔离器件的新颖方法。 首先在半导体衬底上形成隔离层并将其图案化成衬底上的至少两个隔离台面。 接下来，在衬底上形成厚度足以覆盖隔离台面的覆盖半导体层。 对半导体层进行平坦化直到隔离台面露出，从而在两个隔离台面之间形成半导体区域，作为半导体器件的有源区。
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