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    Low profile thick film heaters in multi-slot bake chamber
    1.
    发明授权
    Low profile thick film heaters in multi-slot bake chamber 失效
    低槽厚膜加热器在多槽烘烤室

    公开(公告)号：US06506994B2

    公开(公告)日：2003-01-14

    申请号：US09882769

    申请日：2001-06-15

    申请人： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    发明人： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    IPC分类号： F27B514

    CPC分类号： H01L21/67748 ,  C23C16/0209 ,  C23C16/54 ,  C30B25/10 ,  C30B31/14 ,  H01L21/68

    摘要： A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.

    摘要翻译： 用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板，以在每对相邻的加热器板表面之间形成狭槽。 加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站，或者可以结合在一个或多个这样的处理室的装载锁中。 厚膜加热器板比传统加热板更有效，响应时间更长。 围绕堆叠的加热器板的室是可压力密封的，并且不包括用于在压力下向其供应吹扫气体的吹扫气体入口。 通向室的门打开以允许晶片被插入或移除，并且在关闭时形成压力密封。 堆叠中的槽可与门对准，用于装载和卸载晶片。 该堆叠安装在驱动轴上，该驱动轴延伸穿过该室，在该驱动轴处与驱动轴相接合，该驱动器穿过驱动轴进出腔室，以根据需要对准各种槽。

    Method and apparatus for processing semiconductive wafers
    2.
    发明授权
    Method and apparatus for processing semiconductive wafers 有权
    用于处理半导体晶片的方法和设备

    公开(公告)号：US06300255B1

    公开(公告)日：2001-10-09

    申请号：US09257467

    申请日：1999-02-24

    申请人： Shankar Venkataranan ,  Scott Hendrickson ,  Inna Shmurun ,  Son T. Nguyen

    发明人： Shankar Venkataranan ,  Scott Hendrickson ,  Inna Shmurun ,  Son T. Nguyen

    IPC分类号： H01L2131

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45512

    摘要： There are provided a method and apparatus for forming by chemical vapor deposition on large diameter (e.g., 300 mm) semiconductive wafers thin insulating layers of silicon oxide (SiO2) having high uniformity from rim to rim across any diameter through the centers of the wafers. Such high degree of uniformity of the layers is obtained by directing separately a first reactive gas stream and a second reactive gas stream into close proximity to an exposed surface of a wafer to a be coated by the gasses with an insulating layer, the gas streams when mixed together reacting with each other to deposit an insulating layer on a wafer; forming a whirlpool-like swirling mixture of the first and second gas streams to thoroughly mix together the gasses thereof; forming a highly uniform mixture of the reactive gasses; and promptly flowing the mixture of reactive gasses over and upon the surface of the wafer. The apparatus also provides dual wafer processing chamber cavities.

    摘要翻译： 提供了一种用于通过化学气相沉积在大直径（例如，300mm）半导体晶片上形成薄膜绝缘层的氧化硅（SiO 2）的方法和装置，所述氧化硅（SiO 2）的绝缘层从边缘到边缘具有高度均匀性，并通过晶片中心的任何直径。 通过将第一反应性气体流和第二反应气体流分别靠近晶片的暴露表面引导以由具有绝缘层的气体涂覆而获得这些高度的均匀度，气体流 混合在一起反应以在晶片上沉积绝缘层; 形成第一和第二气流的漩涡状旋转混合物以将其气体充分混合在一起; 形成高度均匀的反应性气体混合物; 并迅速将反应性气体的混合物流过晶片表面上和表面。 该设备还提供双晶片处理室腔。

    Methods and apparatus for forming nitrogen-containing layers
    7.
    发明授权
    Methods and apparatus for forming nitrogen-containing layers 有权
    用于形成含氮层的方法和装置

    公开(公告)号：US08546273B2

    公开(公告)日：2013-10-01

    申请号：US13192139

    申请日：2011-07-27

    申请人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

    发明人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

    IPC分类号： H01L21/469

    CPC分类号： H01L21/3144 ,  C23C8/02 ,  C23C8/36 ,  C23C8/80 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/318

    摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.

    摘要翻译： 本文提供了形成含氮层的方法和装置。 在一些实施方案中，形成含氮层的方法可以包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将基底加热到至少约250摄氏度的温度; 以及将第一层暴露于由基本上由氨（NH 3）和惰性气体组成的工艺气体形成的射频（RF）等离子体，同时将处理室保持在约10mTorr至约40mTorr的压力下，以至少将 第一层的上部成为含氮层。

    DUAL ZONE GAS INJECTION NOZZLE
    8.
    发明申请
    DUAL ZONE GAS INJECTION NOZZLE 审中-公开
    双区气体喷射喷嘴

    公开(公告)号：US20120164845A1

    公开(公告)日：2012-06-28

    申请号：US13415753

    申请日：2012-03-08

    申请人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    发明人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC分类号： H01L21/318 ,  H01L21/263

    CPC分类号： H01J37/3244 ,  H01J37/32449

    摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

    摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

    SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL
    9.
    发明申请
    SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL 有权
    带中心气体输送机的基板加工室

    公开(公告)号：US20100080904A1

    公开(公告)日：2010-04-01

    申请号：US12240120

    申请日：2008-09-29

    申请人： Nir Merry ,  Son T. Nguyen

    发明人： Nir Merry ,  Son T. Nguyen

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45563

    摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.

    摘要翻译： 本文公开了处理衬底的方法和设备。 处理室包括室主体，基板支撑基座，泵口和气体注入漏斗。 腔体具有内部体积，并且衬底支撑基座设置在腔体的内部体积中。 泵口连接到内部体积并且设置在离基板支撑基座的中心轴线偏心的位置。 泵端口提供靠近基板支撑基座的表面的方位不均匀的泵送，并且在使用期间在内部体积内产生高压和低压的局部区域。 气体注入漏斗设置在室主体的顶部并与衬底支撑基座相对。 气体注入漏斗偏离衬底支撑基座的中心轴线并且设置在低压区域中。

    GAS HEATER
    10.
    发明申请
    GAS HEATER 有权
    气体加热器

    公开(公告)号：US20090283252A1

    公开(公告)日：2009-11-19

    申请号：US12122616

    申请日：2008-05-16

    申请人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

    发明人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

    IPC分类号： G05D23/00 ,  F28F1/10 ,  H05B1/00 ,  H05B1/02

    CPC分类号： F28F7/02

    摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.

    摘要翻译： 一种用于加热或冷却流体的方法和装置。 连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。 插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。 在薄间隙附近的热插入物通过出口管道流出或流出流体。