公开(公告)号：US20080059191A1

公开(公告)日：2008-03-06

申请号：US11469893

申请日：2006-09-04

申请人： Yen-Son Paul Huang ,  Bo-Ren Bai ,  Zhen Hou ,  Yaying Liu ,  Hang Yu ,  Ming Zhang

发明人： Yen-Son Paul Huang ,  Bo-Ren Bai ,  Zhen Hou ,  Yaying Liu ,  Hang Yu ,  Ming Zhang

IPC分类号： G10L13/08

CPC分类号： G10L15/30 ,  G10L2015/228

摘要： An improved voice recognition system in which a Voice Keyword Table is generated and downloaded from a set-up device to a voice recognition device. The VKT includes visual form data, spoken form data, phonetic format data, and an entry corresponding to a keyword, and TTS-generated voice prompts and voice models corresponding to the phonetic format data. A voice recognition system on the voice recognition device is updated by the set-up device. Furthermore, voice models in the voice recognition device are modified by the set-up device.

摘要翻译： 一种改进的语音识别系统，其中从设置装置生成和下载语音关键字表到语音识别装置。 VKT包括视觉形式数据，口头表格数据，语音格式数据和与关键字对应的条目，以及与语音格式数据对应的TTS产生的语音提示和语音模型。 语音识别装置上的语音识别系统由设置装置更新。 此外，语音识别装置中的语音模型被设置装置修改。

公开(公告)号：US20100145696A1

公开(公告)日：2010-06-10

申请号：US12704320

申请日：2010-02-11

申请人： Yen-Son Paul Huang ,  Bo-Ren Bai ,  Zhen Hou ,  Yaying Liu ,  Hang Yu ,  Ming Zhang

发明人： Yen-Son Paul Huang ,  Bo-Ren Bai ,  Zhen Hou ,  Yaying Liu ,  Hang Yu ,  Ming Zhang

IPC分类号： G10L17/00

CPC分类号： G10L15/30 ,  G10L2015/228

摘要： An improved voice recognition system in which a Voice Keyword Table is generated and downloaded from a set-up device to a voice recognition device. The VKT includes visual form data, spoken form data, phonetic format data, and an entry corresponding to a keyword, and TTS-generated voice prompts and voice models corresponding to the phonetic format data. A voice recognition system on the voice recognition device is updated by the set-up device. Furthermore, voice models in the voice recognition device are modified by the set-up device.

公开(公告)号：US07689417B2

公开(公告)日：2010-03-30

申请号：US11469893

申请日：2006-09-04

申请人： Yen-Son Paul Huang ,  Bo-Ren Bai ,  Zhen Hou ,  Yaying Liu ,  Hang Yu ,  Ming Zhang

发明人： Yen-Son Paul Huang ,  Bo-Ren Bai ,  Zhen Hou ,  Yaying Liu ,  Hang Yu ,  Ming Zhang

IPC分类号： G10L15/00

CPC分类号： G10L15/30 ,  G10L2015/228

摘要： An improved voice recognition system in which a Voice Keyword Table is generated and downloaded from a set-up device to a voice recognition device. The VKT includes visual form data, spoken form data, phonetic format data, and an entry corresponding to a keyword, and TTS-generated voice prompts and voice models corresponding to the phonetic format data. A voice recognition system on the voice recognition device is updated by the set-up device. Furthermore, voice models in the voice recognition device are modified by the set-up device.

摘要翻译： 一种改进的语音识别系统，其中从设置装置生成和下载语音关键字表到语音识别装置。 VKT包括视觉形式数据，口头表格数据，语音格式数据和与关键字对应的条目，以及与语音格式数据对应的TTS产生的语音提示和语音模型。 语音识别装置上的语音识别系统由设置装置更新。 此外，语音识别装置中的语音模型被设置装置修改。

公开(公告)号：US08097082B2

公开(公告)日：2012-01-17

申请号：US12110879

申请日：2008-04-28

申请人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

发明人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

IPC分类号： C23C16/50

CPC分类号： C23C16/5096 ,  H01J37/32541 ,  Y10T117/10

摘要： A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

摘要翻译： 一种用于在等离子体工艺期间调节局部等离子体密度的方法和装置。 一个实施例提供了一种电极组件，其包括具有非平面表面的导电面板。 非平面表面被配置为在处理期间面向衬底，并且设置导电面板使得非平面表面与具有电极的衬底支撑件相对。 导电面板和基板支撑件形成等离子体体积。 非平面被配置为通过改变导电板和电极之间的距离来调节导电板和电极之间的电场。

公开(公告)号：US10227695B2

公开(公告)日：2019-03-12

申请号：US12974365

申请日：2010-12-21

申请人： Dale R. Du Bois ,  Mohamad A. Ayoub ,  Robert Kim ,  Amit Bansal ,  Mark Fodor ,  Binh Nguyen ,  Siu F. Cheng ,  Hang Yu ,  Chiu Chan ,  Ganesh Balasubramanian ,  Deenesh Padhi ,  Juan Carlos Rocha

发明人： Dale R. Du Bois ,  Mohamad A. Ayoub ,  Robert Kim ,  Amit Bansal ,  Mark Fodor ,  Binh Nguyen ,  Siu F. Cheng ,  Hang Yu ,  Chiu Chan ,  Ganesh Balasubramanian ,  Deenesh Padhi ,  Juan Carlos Rocha

IPC分类号： C23C14/04 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  H01J37/32 ,  H01J37/34 ,  H01L21/687

摘要： Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

公开(公告)号：US20120015521A1

公开(公告)日：2012-01-19

申请号：US13093679

申请日：2011-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：US08349741B2

公开(公告)日：2013-01-08

申请号：US13455916

申请日：2012-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施方案中，提供了形成复合无定形碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中， 用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

公开(公告)号：US08227352B2

公开(公告)日：2012-07-24

申请号：US13093679

申请日：2011-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：US20090269512A1

公开(公告)日：2009-10-29

申请号：US12110879

申请日：2008-04-28

申请人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

发明人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

IPC分类号： C23C16/44

CPC分类号： C23C16/5096 ,  H01J37/32541 ,  Y10T117/10

摘要： A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

摘要翻译： 一种用于在等离子体工艺期间调节局部等离子体密度的方法和装置。 一个实施例提供了一种电极组件，其包括具有非平面表面的导电面板。 非平面表面被配置为在处理期间面向衬底，并且设置导电面板使得非平面表面与具有电极的衬底支撑件相对。 导电面板和基板支撑件形成等离子体体积。 非平面被配置为通过改变导电板和电极之间的距离来调节导电板和电极之间的电场。

公开(公告)号：US20210247318A1

公开(公告)日：2021-08-12

申请号：US17214809

申请日：2021-03-27

申请人： Yunfei Xie ,  Yuliang Liu ,  Hang Yu ,  Weirong Yao ,  Yahui Guo ,  Yuliang Cheng ,  Yichi Zhang

发明人： Yunfei Xie ,  Yuliang Liu ,  Hang Yu ,  Weirong Yao ,  Yahui Guo ,  Yuliang Cheng ,  Yichi Zhang

IPC分类号： G01N21/65 ,  G01N33/08 ,  G06F17/18

摘要： Disclosed is a method for non-destructive detection of egg freshness based on Raman spectroscopy technology, which belongs to the field of food detection. Partial least squares regression models are built using Raman spectroscopic data and measured values of physicochemical indexes for egg freshness, which can be used to predict egg freshness based on Raman spectrum of egg shell surface. The Raman spectroscopic data are collected in the waveband of 100-3000 cm−1. The physicochemical indexes used in the invention include the Haugh unit, the albumen pH, the air chamber diameter and the air chamber height. By using the partial least squares model, values of physicochemical index for egg freshness can be obtained from Raman spectra collected on egg shell surfaces, thus achieving the goal of non-destructive detection of egg freshness.