公开(公告)号：US20130056828A1

公开(公告)日：2013-03-07

申请号：US13436689

申请日：2012-03-30

申请人： Yeon Taek JEONG ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

发明人： Yeon Taek JEONG ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/512 ,  H01L29/786 ,  H01L2029/42388

摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

公开(公告)号：US08871577B2

公开(公告)日：2014-10-28

申请号：US13436689

申请日：2012-03-30

申请人： Yeon Taek Jeong ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

发明人： Yeon Taek Jeong ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

IPC分类号： H01L21/00 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/512 ,  H01L29/786 ,  H01L2029/42388

摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

摘要翻译： 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。 栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料 并且第二材料具有不同的碳和硅原子数比。

公开(公告)号：US08753920B2

公开(公告)日：2014-06-17

申请号：US13195444

申请日：2011-08-01

申请人： Bo Sung Kim ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

发明人： Bo Sung Kim ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

IPC分类号： H01L21/36

CPC分类号： H01L21/02628 ,  H01L21/02554 ,  H01L21/02565

摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn   (Formula 1) Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.

摘要翻译： 提供一种用于氧化物半导体的前体组合物。 用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1）这里，M是金属离子，A是 包括α-取代的羧酸酯的有机配体，n是自然数。

公开(公告)号：US08760596B2

公开(公告)日：2014-06-24

申请号：US13173457

申请日：2011-06-30

申请人： Tae-Young Choi ,  Bo Sung Kim ,  Young Min Kim ,  Seon-Pil Jang ,  Kang Moon Jo ,  Yeon Taek Jeong ,  Ki Beom Lee

发明人： Tae-Young Choi ,  Bo Sung Kim ,  Young Min Kim ,  Seon-Pil Jang ,  Kang Moon Jo ,  Yeon Taek Jeong ,  Ki Beom Lee

IPC分类号： G02F1/136

CPC分类号： H01L27/1225 ,  G02F1/13439 ,  G02F2001/13685 ,  G02F2001/1676

摘要： A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

摘要翻译： 薄膜晶体管阵列面板包括绝缘基板上的源极和漏电极，绝缘基板上的氧化物半导体，与源电极和漏电极重叠，钝化层与氧化物半导体和绝缘基板上重叠， 钝化层上的栅极电极和连接到漏电极的像素电极。 栅电极和像素电极包括相同的材料。 在薄膜晶体管阵列面板的截面图中，氧化物半导体位于源电极和栅电极之间，在漏电极和栅电极之间。

公开(公告)号：US08278648B2

公开(公告)日：2012-10-02

申请号：US11781109

申请日：2007-07-20

申请人： Tae Young Choi ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

发明人： Tae Young Choi ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

IPC分类号： H01L29/08 ,  H01L51/10

CPC分类号： H01L51/0096 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/107 ,  Y02E10/549

摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

摘要翻译： 公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。

公开(公告)号：US09362513B2

公开(公告)日：2016-06-07

申请号：US11782980

申请日：2007-07-25

申请人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

发明人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

IPC分类号： G02B5/08 ,  H01L51/05 ,  H01L27/32

CPC分类号： H01L51/0545 ,  H01L27/3246 ,  H01L51/052

摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

摘要翻译： 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极 薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

公开(公告)号：US20080023695A1

公开(公告)日：2008-01-31

申请号：US11782980

申请日：2007-07-25

申请人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

发明人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L27/3246 ,  H01L51/052

摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

摘要翻译： 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极 薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

公开(公告)号：US20130248850A1

公开(公告)日：2013-09-26

申请号：US13571684

申请日：2012-08-10

申请人： Tae-Young CHOI ,  Bo Sung Kim ,  Byungju Lee ,  Kangmoon Jo

发明人： Tae-Young CHOI ,  Bo Sung Kim ,  Byungju Lee ,  Kangmoon Jo

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L27/32

CPC分类号： H01L29/7869 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor includes a source electrode, a drain electrode, a channel portion disposed between the source electrode and the drain electrode, and a gate electrode disposed on the channel portion and insulated from the channel portion. The source electrode, the drain electrode, and the channel portion are disposed on a same layer. A display apparatus includes a display device and the thin film transistor that applies a driving signal to the display device.

摘要翻译： 薄膜晶体管包括源电极，漏电极，设置在源电极和漏电极之间的沟道部分，以及设置在沟道部分上并与沟道部分绝缘的栅电极。 源电极，漏电极和沟道部分设置在同一层上。 显示装置包括显示装置和向显示装置施加驱动信号的薄膜晶体管。

公开(公告)号：US20080017851A1

公开(公告)日：2008-01-24

申请号：US11781109

申请日：2007-07-20

申请人： Tae Young CHOI ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

发明人： Tae Young CHOI ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0096 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/107 ,  Y02E10/549

摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

摘要翻译： 公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。

公开(公告)号：US08319223B2

公开(公告)日：2012-11-27

申请号：US12971872

申请日：2010-12-17

申请人： Bo Sung Kim ,  Mun-Pyo Hong ,  Min-Seong Ryu ,  Yong-Uk Lee

发明人： Bo Sung Kim ,  Mun-Pyo Hong ,  Min-Seong Ryu ,  Yong-Uk Lee

IPC分类号： H01L29/76

CPC分类号： H01L51/0545 ,  H01L51/0021

摘要： The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.

摘要翻译： 本发明公开了一种有机薄膜晶体管，有机薄膜晶体管阵列基板和有机薄膜晶体管显示器。 本发明公开了适用于大屏幕显示器的有机材料。 本发明还公开了制造这种有机薄膜晶体管，有机薄膜晶体管阵列基板和有机薄膜晶体管显示器的结构和方法。