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    Method of forming thin film using atomic layer deposition method
    1.
    发明授权
    Method of forming thin film using atomic layer deposition method 有权
    使用原子层沉积法形成薄膜的方法

    公开(公告)号：US06576053B1

    公开(公告)日：2003-06-10

    申请号：US09679559

    申请日：2000-10-06

    申请人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

    发明人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

    IPC分类号： C30B2504

    CPC分类号： H01L21/31691 ,  C30B25/02 ,  C30B29/20 ,  H01L21/316

    摘要： In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, injecting a second reactant into the reaction chamber, and purging the second reactant. The thin film is formed by a chemical reaction between the atom that forms the thin film and a second reactant whose binding energy with respect to the atom that forms the thin film is larger than the binding energy of the ligand with respect to the atom that forms the thin film and the generation of by-products is prevented. The generation of a hydroxide by-product in the thin film is suppressed by using a material that does not include a hydroxide as the second reactant, purging the second reactant, and reacting the second reactant with a third reactant that includes hydroxide. After purging the second reactant, the third reactant for removing impurities and improving the stoichiometry of the thin film is injected and purged. In this way, it is possible to obtain a thin film that does not include impurities and whose stoichiometry is excellent.

    摘要翻译： 在使用原子层沉积（ALD）法形成薄膜的方法中，在基板上循环形成薄膜。 每个循环包括将包括形成薄膜的原子和配体的第一反应物注入到包括基板的反应室中，清洗第一反应物，将第二反应物注入反应室，以及清除第二反应物。 薄膜由形成薄膜的原子与第二反应物之间的化学反应形成，第二反应物的结合能相对于形成薄膜的原子的结合能大于配体相对于形成的原子的结合能 防止了薄膜和副产物的产生。 通过使用不包含氢氧化物作为第二反应物的材料，吹扫第二反应物，并使第二反应物与包含氢氧化物的第三反应物反应，可以抑制薄膜中氢氧化物副产物的产生。 在清洗第二反应物之后，注入和清除用于除去杂质的第三反应物和改善薄膜的化学计量。 以这种方式，可以获得不含杂质的化学计量优异的薄膜。

    Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same
    6.
    发明授权
    Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same 有权
    具有通过原子层沉积形成的薄膜的半导体器件及其制造方法

    公开(公告)号：US06833310B2

    公开(公告)日：2004-12-21

    申请号：US09902607

    申请日：2001-07-12

    申请人： Yeong-kwan Kim ,  Dong-chan Kim ,  Seung-hwan Lee ,  Young-wook Park

    发明人： Yeong-kwan Kim ,  Dong-chan Kim ,  Seung-hwan Lee ,  Young-wook Park

    IPC分类号： H01L2176

    CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/823475 ,  H01L27/10873 ,  H01L27/10885

    摘要： A semiconductor device having a thin film formed by atomic layer deposition and a method for fabricating the same, wherein the semiconductor device includes a liner layer formed on an internal wall and bottom of a trench, gate spacers formed on the sidewalls of gate stack patterns functioning as a gate line, a first bubble prevention layer formed on the gate spacers and the gate stack patterns, bit line spacers formed on the sidewalls of bit line stack patterns functioning as a bit line, and a second bubble prevention layer formed on the bit line spacers and the gate stack patterns and at least one of the above is formed of a multi-layer of a silicon nitride layer and a silicon oxide layer, or a multi-layer of a silicon oxide layer and a silicon nitride layer, thereby filling the trench, gate stack patterns, or bit line stack patterns without a void.

    摘要翻译： 具有通过原子层沉积形成的薄膜的半导体器件及其制造方法，其中所述半导体器件包括形成在沟槽的内壁和底部上的衬垫层，形成在栅堆叠图案功能的侧壁上的栅极间隔 作为栅极线，形成在栅极间隔物和栅极堆叠图案上的第一防止气泡层，形成在用作位线的位线堆叠图案的侧壁上的位线间隔物和形成在位线上的第二防止气泡层 间隔物和栅极堆叠图案，并且上述中的至少一个由氮化硅层和氧化硅层的多层或氧化硅层和氮化硅层的多层形成，从而填充 沟槽，栅极堆叠图案或无空隙的位线堆叠图案。

    Apparatus for forming a film on a substrate
    9.
    发明授权
    Apparatus for forming a film on a substrate 有权
    用于在基板上形成膜的装置

    公开(公告)号：US06416584B1

    公开(公告)日：2002-07-09

    申请号：US09350407

    申请日：1999-07-08

    申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    IPC分类号： C23C1600

    CPC分类号： C23C16/56 ,  C23C16/405

    摘要： An apparatus for forming a film on a substrate includes a reaction chamber and gas supply lines. The gas supply lines supply gases for depositing and annealing the film. Depositing a dielectric film and annealing the dielectric film are performed in situ using the reaction chamber. Thus, the time required for forming the dielectric film is shortened, improving the productivity. Also, deposition and annealing of the dielectric film are performed in the same reaction chamber, so that less area is required for manufacturing equipment.

    摘要翻译： 在基板上形成膜的装置包括反应室和气体供给管线。 气体供应管线供应用于沉积和退火膜的气体。 使用反应室原位进行沉积介电膜并退火介电膜。 因此，缩短了形成电介质膜所需的时间，提高了生产率。 此外，电介质膜的沉积和退火在相同的反应室中进行，因此制造设备需要较少的面积。

    Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
    10.
    发明授权
    Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film 失效
    具有氧化钽膜的半导体存储器件的电容器的制造方法

    公开(公告)号：US06207489B1

    公开(公告)日：2001-03-27

    申请号：US09393186

    申请日：1999-09-10

    申请人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

    发明人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

    IPC分类号： H01L218242

    CPC分类号： H01L21/02183 ,  C03C23/0075 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/56

    摘要： A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.

    摘要翻译： 一种制造具有由氧化钽膜形成的电介质膜的电容器的方法。 该方法包括形成电连接到半导体衬底的有源区的下电极。 在下电极的表面上形成包括选自氧化硅，氮化硅及其组合的组分的预处理膜。 使用Ta前体在预处理膜上形成电介质膜。 电介质膜包括在选自指定温度范围的第一温度下沉积的第一介电层和在与第一温度不同的第二温度下沉积并选自相同指定温度范围的第二电介质层。 此后在氧气氛中对电介质膜进行热处理。