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    METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
    2.
    发明申请
    METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe 有权
    选择性沉积重金属外延SiGe的方法

    公开(公告)号：US20060234488A1

    公开(公告)日：2006-10-19

    申请号：US11420906

    申请日：2006-05-30

    申请人： Yihwan Kim ,  Arkadii Samoilov

    发明人： Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： H01L21/44

    CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

    摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

    摘要翻译： 本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时 保持在约0.1托至约200托的范围内的压力。 沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。 在基板上选择性地并外延生长硅膜或硅锗膜。 一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。 方法可以包括使用选择性硅锗外延膜的电子器件的制造。

    Methods of selective deposition of heavily doped epitaxial SiGe
    3.
    发明申请
    Methods of selective deposition of heavily doped epitaxial SiGe 有权
    选择沉积重掺杂外延SiGe的方法

    公开(公告)号：US20050079691A1

    公开(公告)日：2005-04-14

    申请号：US10683937

    申请日：2003-10-10

    申请人： Yihwan Kim ,  Arkadii Samoilov

    发明人： Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： H01L21/20 ,  H01L21/205

    CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

    摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

    摘要翻译： 本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时 保持在约0.1托至约200托的范围内的压力。 沉积气体被提供到处理室，并且包括SiH 4，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂气体。 在基板上选择性地并外延生长硅膜或硅锗膜。 一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。 方法可以包括使用选择性硅锗外延膜的电子器件的制造。

    GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION
    4.
    发明申请
    GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION 有权
    在外膜形成期间使用的气体歧管

    公开(公告)号：US20070259112A1

    公开(公告)日：2007-11-08

    申请号：US11697516

    申请日：2007-04-06

    申请人： David Ishikawa ,  Craig Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii Samoilov

    发明人： David Ishikawa ,  Craig Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： C23C16/00 ,  C30B23/00 ,  C30B28/12

    CPC分类号： C30B35/00 ,  C23C16/45561 ,  C30B25/14 ,  Y10T117/10

    摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

    摘要翻译： 本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。 公开了许多其他方面。

    Pre-cleaning of substrates in epitaxy chambers
    5.
    发明申请
    Pre-cleaning of substrates in epitaxy chambers 有权
    在外延室中预清洗底物

    公开(公告)号：US20080245767A1

    公开(公告)日：2008-10-09

    申请号：US11480134

    申请日：2006-06-30

    申请人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

    发明人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

    IPC分类号： H01L21/306

    CPC分类号： C23C16/0236 ,  C30B25/02 ,  C30B29/52

    摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

    摘要翻译： 公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。 预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。 然后使用外延沉积在衬底表面上形成外延层。

    SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY
    6.
    发明申请
    SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY 有权
    具有替代气体供应的选择性外延工艺

    公开(公告)号：US20060216876A1

    公开(公告)日：2006-09-28

    申请号：US11421156

    申请日：2006-05-31

    申请人： Yihwan Kim ,  Arkadii Samoilov

    发明人： Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： H01L21/84 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/20 ,  H01L21/31

    CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

    摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

    摘要翻译： 在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。 衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。 将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。 沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。 此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多​​晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。 该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

    Selective epitaxy process with alternating gas supply
    7.
    发明申请
    Selective epitaxy process with alternating gas supply 有权

    公开(公告)号：US20060115934A1

    公开(公告)日：2006-06-01

    申请号：US11001774

    申请日：2004-12-01

    申请人： Yihwan Kim ,  Arkadii Samoilov

    发明人： Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： H01L21/84 ,  H01L21/336

    CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

    摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

    Pre-cleaning of substrates in epitaxy chambers
    8.
    发明授权
    Pre-cleaning of substrates in epitaxy chambers 有权
    在外延室中预清洗底物

    公开(公告)号：US07651948B2

    公开(公告)日：2010-01-26

    申请号：US11480134

    申请日：2006-06-30

    申请人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

    发明人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

    IPC分类号： H01L21/302

    CPC分类号： C23C16/0236 ,  C30B25/02 ,  C30B29/52

    摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

    摘要翻译： 公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。 预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。 然后使用外延沉积在衬底表面上形成外延层。

    SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY
    9.
    发明申请
    SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY 有权
    具有替代气体供应的选择性外延工艺

    公开(公告)号：US20070207596A1

    公开(公告)日：2007-09-06

    申请号：US11745416

    申请日：2007-05-07

    申请人： Yihwan Kim ,  Arkadii Samoilov

    发明人： Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： H01L21/20

    CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

    摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

    摘要翻译： 在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。 衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。 将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。 沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。 此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多​​晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。 该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。