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    Dry coating processes for substrates
    3.
    发明授权
    Dry coating processes for substrates 有权
    基材干涂工艺

    公开(公告)号：US08691324B2

    公开(公告)日：2014-04-08

    申请号：US13438088

    申请日：2012-04-03

    申请人： Yiliang Wu ,  Sandra J. Gardner ,  Ping Liu ,  Nan-Xing Hu

    发明人： Yiliang Wu ,  Sandra J. Gardner ,  Ping Liu ,  Nan-Xing Hu

    IPC分类号： C23C26/00 ,  B05D7/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/184 ,  C01P2004/20 ,  C09C1/44 ,  C09C1/46 ,  C09C1/62 ,  C09C3/041 ,  Y10T428/25

    摘要： Disclosed herein are solvent free, dry coating processes for applying a layered material such as graphene, nanoplate graphite, etc., to a substrate. The applied layered material is devoid of any dispersant and substantially uniform in thickness. Generally, a layered material precursor composition is mixed with a milling medium so that the milling medium is coated with the layered material. The substrate is then contacted with the coated milling medium. The layered material on the milling medium transfers to the substrate to form a coating on the substrate. Such processes may be especially useful for applying conductive films onto a polymeric substrate without the need for additives such as a surfactant or a polymeric binder.

    摘要翻译： 本文公开了用于将诸如石墨烯，纳米板石墨等层状材料施加到基底上的无溶剂的干法涂布方法。 所施加的层状材料没有任何分散剂并且厚度基本均匀。 通常，将层状材料前体组合物与研磨介质混合，使得研磨介质涂覆有分层材料。 然后将基材与涂覆的研磨介质接触。 研磨介质上的层状材料转移到基底上以在基底上形成涂层。 这种方法对于将导电膜施加到聚合物基材上而不需要添加剂如表面活性剂或聚合物粘合剂可能是特别有用的。

    SEMICONDUCTOR COMPOSITION
    8.
    发明申请
    SEMICONDUCTOR COMPOSITION 有权
    半导体组成

    公开(公告)号：US20120161110A1

    公开(公告)日：2012-06-28

    申请号：US12977464

    申请日：2010-12-23

    申请人： Yiliang Wu ,  Anthony James Wigglesworth ,  Ping Liu ,  Nan-Xing Hu

    发明人： Yiliang Wu ,  Anthony James Wigglesworth ,  Ping Liu ,  Nan-Xing Hu

    IPC分类号： H01L51/30 ,  H01L51/40 ,  H01B1/12

    CPC分类号： C07D495/04 ,  H01L51/0074 ,  H01L51/0541 ,  H01L51/0545

    摘要： An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): wherein R1, m, n, a, b, c, and X are as described herein. Devices formed from the composition exhibit high mobility and excellent stability.

    摘要翻译： 诸如薄膜晶体管的电子器件包括由半导体组合物形成的半导体层。 半导体组合物包含聚合物粘合剂和式（I）的小分子半导体：其中R 1，m，n，a，b，c和X如本文所述。 由该组合物形成的装置显示出高移动性和优异的稳定性。

    DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS
    9.
    发明申请
    DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS 有权
    薄膜晶体管的电介质组成

    公开(公告)号：US20120142515A1

    公开(公告)日：2012-06-07

    申请号：US12957445

    申请日：2010-12-01

    申请人： Yiliang Wu ,  Ping Liu ,  Anthony James Wigglesworth ,  Nan-Xing Hu

    发明人： Yiliang Wu ,  Ping Liu ,  Anthony James Wigglesworth ,  Nan-Xing Hu

    IPC分类号： H01L21/47 ,  H01B3/30 ,  H01B3/46 ,  H01B3/08

    CPC分类号： H01L21/02126 ,  H01B3/306 ,  H01B3/42 ,  H01B3/447 ,  H01B3/46 ,  H01L21/02118 ,  H01L21/02282 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

    摘要： An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

    摘要翻译： 诸如薄膜晶体管的电子器件包括由电介质组合物形成的衬底和电介质层。 电介质组合物包括电介质材料，交联剂和热酸发生剂。 在特定实施例中，介电材料包括较低介电常数材料和较高介电常数材料。 当沉积时，较低k电介质材料和较高介电材料形成分离相。 热酸发生器允许电介质层在相对较低的温度和/或更短的时间段内固化，允许选择否则通过电介质层的固化而变形的较低成本的基底材料。

    Ultra low melt metal nanoparticle composition for thick-film applications
    10.
    发明授权
    Ultra low melt metal nanoparticle composition for thick-film applications 有权
    用于厚膜应用的超低熔融金属纳米颗粒组合物

    公开(公告)号：US08057849B2

    公开(公告)日：2011-11-15

    申请号：US12631153

    申请日：2009-12-04

    申请人： Ping Liu ,  Yiliang Wu ,  Anthony J. Wigglesworth ,  Nan-Xing Hu

    发明人： Ping Liu ,  Yiliang Wu ,  Anthony J. Wigglesworth ,  Nan-Xing Hu

    IPC分类号： B05D5/12

    CPC分类号： H01B1/22 ,  B22F1/0022 ,  B22F1/0074 ,  B82Y30/00 ,  H05K1/095 ,  H05K1/097 ,  H05K2201/0224 ,  H05K2203/122

    摘要： A method of forming conductive features on a substrate, the method includes reacting a metal compound with a reducing agent in the presence of a stabilizer in a reaction mixture comprising the metal compound, the reducing agent, and the stabilizer, wherein the reaction mixture is substantially free of solvent, to form a plurality of metal nanoparticles with molecules of the stabilizer on the surface of the metal nanoparticles. After isolating the plurality of metal nanoparticles, a liquid composition that includes a polymeric binder, a liquid and the plurality of metal nanoparticles with molecules of the stabilizer on the surface of the metal nanoparticles is deposited on a substrate by a liquid deposition technique to form a deposited composition. The deposited composition is then heated to form conductive features on the substrate.

    摘要翻译： 一种在基材上形成导电特征的方法，所述方法包括使金属化合物与还原剂在稳定剂存在下在包含金属化合物，还原剂和稳定剂的反应混合物中反应，其中反应混合物基本上 不含溶剂，在金属纳米颗粒的表面上形成多个具有稳定剂分子的金属纳米颗粒。 在分离多个金属纳米颗粒之后，通过液体沉积技术将包含聚合物粘合剂，液体和金属纳米颗粒表面上的稳定剂分子的多种金属纳米颗粒的液体组合物通过液体沉积技术沉积在基底上，形成 沉积组成。 然后将沉积的组合物加热以在基底上形成导电特征。