公开(公告)号：US08178363B2

公开(公告)日：2012-05-15

申请号：US13373127

申请日：2011-11-04

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US08062909B2

公开(公告)日：2011-11-22

申请号：US12661365

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

公开(公告)号：US08039885B2

公开(公告)日：2011-10-18

申请号：US12661345

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US07750620B2

公开(公告)日：2010-07-06

申请号：US12321841

申请日：2009-01-26

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G01R15/18 ,  G01R11/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R15/205 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302

摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

摘要翻译： 通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。 所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

公开(公告)号：US07394247B1

公开(公告)日：2008-07-01

申请号：US11881349

申请日：2007-07-26

申请人： Yimin Guo ,  Grace Gorman ,  Po-Kang Wang

发明人： Yimin Guo ,  Grace Gorman ,  Po-Kang Wang

IPC分类号： G01R33/09 ,  G01B7/30

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01D5/145 ,  G01R33/098

摘要： The invention discloses a sensor for 360-degree magnetic field angle measurement. It comprises multiple GMR (or MTJ) stripes with identical geometries except for their orientations. These are used as the building blocks for a pair of Wheatstone bridges that signal the direction of magnetization of their environment. The design greatly enhances sensitivity within GMR stripes and does not require an additional Hall sensor in order to cover the full 360 degree measurement range.

摘要翻译： 本发明公开了一种用于360度磁场角测量的传感器。 它包括除了它们的取向之外具有相同几何形状的多个GMR（或MTJ）条纹。 这些被用作一对惠斯通电桥的结构，它们表示了它们的环境的磁化方向。 该设计极大地提高了GMR条纹下的灵敏度，并且不需要额外的霍尔传感器来覆盖整个360度的测量范围。

公开(公告)号：US07211874B2

公开(公告)日：2007-05-01

申请号：US10818581

申请日：2004-04-06

申请人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

发明人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC分类号： H01L29/82

CPC分类号： G11C11/16

摘要： An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

摘要翻译： 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US20070014146A1

公开(公告)日：2007-01-18

申请号：US11179251

申请日：2005-07-12

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A super-paramagnetic cladding layer formed on from 1 to 3 sides of a conductive line in a magnetic device is disclosed. The cladding layer is made of “x” ML/SL stacks in which x is between 5 and 50, SL is an amorphous AlOx seed layer, and ML is a composite with a soft magnetic layer comprised of discontinuous particles less than 2 nm in size on the seed layer and a capping layer of Ru, Ta, or Cu on the soft magnetic layer. Fringing fields and hysteresis effects from continuous ferromagnetic cladding layers associated with switching the magnetic state of an adjacent MTJ are totally eliminated because of the super-paramagnetic character of the soft magnetic layer at room temperature. The soft magnetic layer has near zero magnetostriction, very high susceptibility, and may be made of Ni˜80Fe˜20, Ni˜30Fe˜70, Co˜90Fe˜10, or CoNiFe.

公开(公告)号：US20060209590A1

公开(公告)日：2006-09-21

申请号：US11080867

申请日：2005-03-15

申请人： Yimin Guo ,  Tai Min ,  Po-Kang Wang

发明人： Yimin Guo ,  Tai Min ,  Po-Kang Wang

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15

摘要： An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.

摘要翻译： 公开了一种改进的TMR装置。 器件的铁磁层，特别是接触介电隧穿层的铁磁层具有无定形结构以及最小厚度（约15）。 用于接触电介质层的优选材料是CoFeB。 公开了克服与磁致伸缩相关的问题的方法，并且描述了用于制造该装置的方法。

公开(公告)号：US07009266B2

公开(公告)日：2006-03-07

申请号：US10781479

申请日：2004-02-17

申请人： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

发明人： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08

摘要： A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

摘要翻译： 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US08089265B2

公开(公告)日：2012-01-03

申请号：US12321772

申请日：2009-01-26

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G01R15/18 ,  G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R15/205 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302

摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

摘要翻译： 通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。 所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。