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    Wafer dicing using scribe line etch
    2.
    发明授权
    Wafer dicing using scribe line etch 有权
    使用划线蚀刻的晶片切割

    公开(公告)号：US08071429B1

    公开(公告)日：2011-12-06

    申请号：US12954151

    申请日：2010-11-24

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

    IPC分类号： H01L21/304

    CPC分类号： H01L21/78 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

    摘要： Embodiments of a method for separating dies from a wafer having first and second sides. The process embodiment includes masking the first side of the wafer, the mask including openings therein to expose parts of the first side substantially aligned with scribe lines of the wafer. The process embodiment also includes etching from the exposed parts of the first side of the wafer until an intermediate position between the first and second sides and sawing the remainder of the wafer, starting from the intermediate position until reaching the second surface.

    摘要翻译： 用于从具有第一和第二侧的晶片分离模具的方法的实施例。 该工艺实施例包括掩蔽晶片的第一侧，掩模包括其中的开口，以暴露基本上与晶片划线对齐的第一侧的部分。 工艺实施例还包括从晶片的第一侧的暴露部分进行蚀刻，直到第一和第二面之间的中间位置，并从中间位置开始到达第二表面，锯切晶片的其余部分。

    PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS
    4.
    发明申请
    PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS 有权
    用于图像传感器的部分通道传输设备

    公开(公告)号：US20130092982A1

    公开(公告)日：2013-04-18

    申请号：US13273026

    申请日：2011-10-13

    申请人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

    发明人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

    IPC分类号： H01L27/148 ,  H01L31/18 ,  H01L31/101

    CPC分类号： H01L27/14616 ,  H01L27/14689

    摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

    摘要翻译： 包括感光元件，浮动扩散区域和转印装置的图像传感器像素的实施例。 感光元件设置在基板层中，用于响应于光积累图像电荷。 浮动扩散区域设置在衬底层中以从感光元件接收图像电荷。 转移装置设置在感光元件和浮动扩散区域之间以选择性地将图像电荷从感光元件转移到浮动扩散区域。 传输装置包括掩埋沟道器件，其包括设置在掩埋沟道掺杂区域上的掩埋沟道栅极。 转移装置还包括表面通道装置，其包括设置在表面通道区域上的表面通道门。 表面通道装置与掩埋通道装置串联。 表面沟道栅极具有与掩埋沟道栅极相反的极性。

    Backside illuminated image sensor with stressed film
    6.
    发明授权
    Backside illuminated image sensor with stressed film 有权
    具有应力膜的背面照明图像传感器

    公开(公告)号：US08338856B2

    公开(公告)日：2012-12-25

    申请号：US12853803

    申请日：2010-08-10

    申请人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    发明人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    IPC分类号： H01L31/0328

    CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

    摘要： A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

    摘要翻译： 背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器包括设置在半导体层和应力调整层内的感光区域。 感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。 应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

    BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM
    7.
    发明申请
    BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM 有权
    带压片的背面照明图像传感器

    公开(公告)号：US20120038014A1

    公开(公告)日：2012-02-16

    申请号：US12853803

    申请日：2010-08-10

    申请人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    发明人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    IPC分类号： H01L27/146 ,  H01L31/0216

    CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

    摘要： A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

    摘要翻译： 背面照明（“BSI”）互补金属氧化物半导体（“CMOS”）图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。 应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

    SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR
    8.
    发明申请
    SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    背面照明图像传感器的密封圈支撑

    公开(公告)号：US20120175722A1

    公开(公告)日：2012-07-12

    申请号：US12986032

    申请日：2011-01-06

    申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

    发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

    摘要： A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

    摘要翻译： 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。

    Seal ring support for backside illuminated image sensor
    9.
    发明授权
    Seal ring support for backside illuminated image sensor 有权
    背面照明图像传感器的密封环支撑

    公开(公告)号：US08373243B2

    公开(公告)日：2013-02-12

    申请号：US12986032

    申请日：2011-01-06

    申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

    发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

    IPC分类号： H01L31/12

    CPC分类号： H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

    摘要： A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

    摘要翻译： 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。

    Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors
    10.
    发明申请
    Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors 审中-公开
    用于在图像传感器中形成掺杂隔离区域的掺杂剂植入硬掩模

    公开(公告)号：US20120319242A1

    公开(公告)日：2012-12-20

    申请号：US13164563

    申请日：2011-06-20

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Keh-Chiang Ku ,  Yin Qian ,  Gang Chen ,  Rongsheng Yang ,  Howard Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Keh-Chiang Ku ,  Yin Qian ,  Gang Chen ,  Rongsheng Yang ,  Howard Rhodes

    IPC分类号： H01L29/02 ,  H01L31/02

    CPC分类号： H01L21/26513 ,  H01L21/76237 ,  H01L27/1463 ,  H01L27/14689

    摘要： Forming a doped isolation region in a substrate during manufacture of an image sensor. A method of an aspect includes forming a hardmask layer over the substrate, and forming a photoresist layer over the hardmask layer. An opening is formed in the photoresist layer over an intended location of the doped isolation region. An opening is etched in the hardmask layer by exposing the hardmask layer to one or more etchants through the opening. The opening in the hardmask layer may have a width of less than 0.4 micrometers. The doped isolation region may be formed in the substrate beneath the opening in the hardmask layer by performing a dopant implantation that introduces dopant through the opening in the hardmask layer. The method of an aspect may include forming sidewall spacers on sidewalls of the opening in the hardmask layer and using the sidewall spacers as a dopant implantation mask.

    摘要翻译： 在图像传感器的制造期间在衬底中形成掺杂的隔离区域。 一种方面的方法包括在衬底上形成硬掩模层，以及在硬掩模层上形成光致抗蚀剂层。 在掺杂隔离区域的预定位置上的光致抗蚀剂层中形成开口。 通过将硬掩模层暴露于通过开口的一个或多个蚀刻剂，在硬掩模层中蚀刻开口。 硬掩模层中的开口可以具有小于0.4微米的宽度。 可以通过执行通过硬掩模层中的开口引入掺杂剂的掺杂剂注入，在硬掩模层中的开口下方的衬底中形成掺杂隔离区。 一方面的方法可以包括在硬掩模层中的开口的侧壁上形成侧壁间隔物，并且使用侧壁间隔物作为掺杂剂注入掩模。