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16 条记录 (耗时 0.025 秒)

    Master-slave voltage doubling full-wave rectifier for wireless power transfer system
    2.
    发明授权
    Master-slave voltage doubling full-wave rectifier for wireless power transfer system 有权
    主从电压倍增全波整流器用于无线电力传输系统

    公开(公告)号：US09548673B1

    公开(公告)日：2017-01-17

    申请号：US14948409

    申请日：2015-11-23

    申请人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Po-Chang Wu ,  Kuei-Cheng Lin ,  Chih-Yuan Yeh

    发明人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Po-Chang Wu ,  Kuei-Cheng Lin ,  Chih-Yuan Yeh

    IPC分类号： H02M7/04

    CPC分类号： H02M7/04 ,  H02M7/103 ,  H02M7/217

    摘要： The invention includes two parallel paths. A first path is composed of two contact ends of a first electronic switch and a first, third and fifth diodes, which connect in series. One contact end connects a first end of an AC source, and a control end connects a second end of the AC source. A second path is composed of two contact ends of a second electronic switch and a second, fourth and sixth diodes, which connect in series. One contact end connects the second end of the AC source, and a control end connects the first end of the AC source. The AC source is connected between the positive ends of the first and second diodes. The second end of the AC source separately connects negative ends of the first and third diodes through two capacitors. The first end of the AC source separately connects negative ends of the second and fourth diodes through another two capacitors. Negative ends of the fifth and sixth diodes connect together to form a voltage output end.

    摘要翻译： 本发明包括两条平行路径。 第一路径由第一电子开关和串联连接的第一，第三和第五二极管的两个接触端组成。 一个接触端连接AC电源的第一端，控制端连接AC电源的第二端。 第二路径由第二电子开关和串联连接的第二，第四和第六二极管的两个接触端组成。 一个接触端连接AC电源的第二端，控制端连接AC电源的第一端。 AC源连接在第一和第二二极管的正极之间。 交流电源的第二端通过两个电容器将第一和第三二极管的负极分开连接。 交流电源的第一端通过另外两个电容器将第二和第四二极管的负极分开连接。 第五和第六二极管的负端连接在一起形成电压输出端。

    RF Power Amplifier with Post-Distortion Linearizer
    3.
    发明申请
    RF Power Amplifier with Post-Distortion Linearizer 审中-公开
    具有后失真线性化的RF功率放大器

    公开(公告)号：US20170070193A1

    公开(公告)日：2017-03-09

    申请号：US14948380

    申请日：2015-11-22

    申请人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Po-Chang Wu ,  Kuei-Cheng Lin ,  Chih-Yuan Yeh ,  Hwann-Kaeo Chiou

    发明人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Po-Chang Wu ,  Kuei-Cheng Lin ,  Chih-Yuan Yeh ,  Hwann-Kaeo Chiou

    IPC分类号： H03F1/02 ,  H03F3/193 ,  H03F3/21 ,  H03F1/32

    CPC分类号： H03F3/211 ,  H03F1/0261 ,  H03F1/3205 ,  H03F3/193 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2201/3215 ,  H03F2203/21106

    摘要： The invention provides an RF power amplifier with post-distortion linearizer. The power amplifier includes a main amplifier, an auxiliary amplifier and a phase compensator. The first amplifier has a first input end and a first output end and operates in class A or AB. The auxiliary amplifier has a second input end and a second output end and operates in class B or C. The second output end connects the first output end to form a signal output end. The phase compensator has a third input end and a third output end and compensates a phase difference between the main and auxiliary amplifiers to make outputs of the two amplifiers opposite in phase. The third output end connects the second input end. The third input end connects the first input end to form a signal input end.

    摘要翻译： 本发明提供一种具有后失真线性化的RF功率放大器。 功率放大器包括主放大器，辅助放大器和相位补偿器。 第一放大器具有第一输入端和第一输出端，​​并且在A或AB类中工作。 辅助放大器具有第二输入端和第二输出端，并且在B或C类中工作。第二输出端连接第一输出端以形成信号输出端。 相位补偿器具有第三输入端和第三输出端，并补偿主放大器和辅助放大器之间的相位差，使两个放大器的输出相位相反。 第三输出端连接第二输入端。 第三输入端连接第一输入端以形成信号输入端。

    Hydrogen ion-sensitive field effect transistor and manufacturing method thereof
    4.
    发明授权
    Hydrogen ion-sensitive field effect transistor and manufacturing method thereof 有权
    氢离子敏感场效应晶体管及其制造方法

    公开(公告)号：US08466521B2

    公开(公告)日：2013-06-18

    申请号：US12724435

    申请日：2010-03-16

    申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： H01L31/119

    CPC分类号： H01L29/78 ,  G01N27/414 ,  H01L29/4958

    摘要： A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

    摘要翻译： 提供氢离子敏感场效应晶体管及其制造方法。 氢离子敏感场效应晶体管包括半导体衬底，绝缘层，晶体管栅极和感测膜。 在具有源极区域和漏极区域的半导体衬底上限定栅极区域。 绝缘层形成在半导体衬底上的栅极区域内。 晶体管栅极沉积在栅极区内并且包括第一栅极层。 此外，第一栅极层是铝层，并且在其上限定感测窗口。 感测膜是通过氧化第一栅极层而在感测窗内形成的氧化铝膜。 因此，在没有任何膜沉积工艺的情况下形成感测膜，因此简化了制造方法。

    HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
    氢离子敏感场效应晶体管及其制造方法

    公开(公告)号：US20110169056A1

    公开(公告)日：2011-07-14

    申请号：US12724435

    申请日：2010-03-16

    申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/78 ,  G01N27/414 ,  H01L29/4958

    摘要： A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

    摘要翻译： 提供氢离子敏感场效应晶体管及其制造方法。 氢离子敏感场效应晶体管包括半导体衬底，绝缘层，晶体管栅极和感测膜。 在具有源极区域和漏极区域的半导体衬底上限定栅极区域。 绝缘层形成在半导体衬底上的栅极区域内。 晶体管栅极沉积在栅极区内并且包括第一栅极层。 此外，第一栅极层是铝层，并且在其上限定感测窗口。 感测膜是通过氧化第一栅极层而在感测窗内形成的氧化铝膜。 因此，在没有任何膜沉积工艺的情况下形成感测膜，因此简化了制造方法。

    Structure for MOSFET sensor
    6.
    发明授权
    Structure for MOSFET sensor 有权
    MOSFET传感器结构

    公开(公告)号：US08704278B2

    公开(公告)日：2014-04-22

    申请号：US13419156

    申请日：2012-03-13

    申请人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Hsin-Hao Liao ,  Chen-Fu Lin

    发明人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Hsin-Hao Liao ,  Chen-Fu Lin

    IPC分类号： G01N27/403 ,  H01L21/00

    CPC分类号： G01N27/4145

    摘要： A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.

    摘要翻译： 提供了一种用于金属氧化物半导体场效应晶体管（MOSFET）传感器的结构。 该结构包括MOSFET，感测膜和参考电极。 参考电极和感测膜形成在MOSFET的第一表面上并且被布置成使得参考电极和感测膜彼此均匀且电耦合。 因此，感测膜和参考电极之间的电场均匀地分布在其间，以稳定MOSFET传感器的工作信号。

    Biosensor package structure with micro-fluidic channel
    7.
    发明授权
    Biosensor package structure with micro-fluidic channel 有权
    具有微流体通道的生物传感器封装结构

    公开(公告)号：US08158063B2

    公开(公告)日：2012-04-17

    申请号：US12333990

    申请日：2008-12-12

    申请人： Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： G01N15/06 ,  G01N33/00

    CPC分类号： B01L3/502707 ,  B01L2200/0689 ,  B01L2300/0636 ,  B01L2300/0816 ,  B01L2400/0439

    摘要： A biosensor package structure with a micro-fluidic channel is provided. The biosensor package structure includes a substrate, a biochip, and a cover. The substrate has a first surface, a second surface, and an opening. The biochip is attached on the first surface. A bio-sensing area of the biochip is exposed to the opening of the substrate. The cover is attached on the second surface to cover the opening so as to form a micro-fluidic channel. By implementing the invention, the manufacturing process of the biosensor is simplified and the productivity is increased.

    摘要翻译： 提供具有微流体通道的生物传感器封装结构。 生物传感器封装结构包括基板，生物芯片和盖。 基板具有第一表面，第二表面和开口。 生物芯片附着在第一表面上。 生物芯片的生物感测区域暴露于基底的开口。 盖子安装在第二表面上以覆盖开口以便形成微流体通道。 通过实施本发明，简化了生物传感器的制造过程，提高了生产率。

    STRUCTURE FOR MOSFET SENSOR
    8.
    发明申请
    STRUCTURE FOR MOSFET SENSOR 有权
    MOSFET传感器结构

    公开(公告)号：US20130153969A1

    公开(公告)日：2013-06-20

    申请号：US13419156

    申请日：2012-03-13

    申请人： Ying-Zong JUANG ,  Hann-Huei Tsai ,  Hsin-Hao Liao ,  Chen-Fu Lin

    发明人： Ying-Zong JUANG ,  Hann-Huei Tsai ,  Hsin-Hao Liao ,  Chen-Fu Lin

    IPC分类号： H01L29/66

    CPC分类号： G01N27/4145

    摘要： A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.

    摘要翻译： 提供了一种用于金属氧化物半导体场效应晶体管（MOSFET）传感器的结构。 该结构包括MOSFET，感测膜和参考电极。 参考电极和感测膜形成在MOSFET的第一表面上并且被布置成使得参考电极和感测膜彼此均匀且电耦合。 因此，感测膜和参考电极之间的电场均匀地分布在其间，以稳定MOSFET传感器的工作信号。

    Biosensor Package Structure with Micro-Fluidic Channel
    9.
    发明申请
    Biosensor Package Structure with Micro-Fluidic Channel 有权
    具有微流通通道的生物传感器封装结构

    公开(公告)号：US20100098585A1

    公开(公告)日：2010-04-22

    申请号：US12333990

    申请日：2008-12-12

    申请人： Chin-Fong CHIU ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Fong CHIU ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： B01J19/00

    CPC分类号： B01L3/502707 ,  B01L2200/0689 ,  B01L2300/0636 ,  B01L2300/0816 ,  B01L2400/0439

    摘要： A biosensor package structure with a micro-fluidic channel is provided. The biosensor package structure includes a substrate, a biochip, and a cover. The substrate has a first surface, a second surface, and an opening. The biochip is attached on the first surface. A bio-sensing area of the biochip is exposed to the opening of the substrate. The cover is attached on the second surface to cover the opening so as to form a micro-fluidic channel. By implementing the invention, the manufacturing process of the biosensor is simplified and the productivity is increased.

    摘要翻译： 提供具有微流体通道的生物传感器封装结构。 生物传感器封装结构包括基板，生物芯片和盖。 基板具有第一表面，第二表面和开口。 生物芯片附着在第一表面上。 生物芯片的生物感测区域暴露于基底的开口。 盖子安装在第二表面上以覆盖开口以形成微流体通道。 通过实施本发明，简化了生物传感器的制造过程，提高了生产率。