公开(公告)号：US08309219B2

公开(公告)日：2012-11-13

申请号：US12881577

申请日：2010-09-14

申请人： Yong Ha Hwang ,  Jae Hyun Cho ,  Gyu Seok Song ,  Chang Beom Chung

发明人： Yong Ha Hwang ,  Jae Hyun Cho ,  Gyu Seok Song ,  Chang Beom Chung

IPC分类号： H01L21/48 ,  H01L21/78 ,  B32B7/12

CPC分类号： H01L21/6835 ,  C09J7/20 ,  C09J7/35 ,  C09J7/38 ,  C09J2201/36 ,  C09J2203/326 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/27 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/29082 ,  H01L2224/73104 ,  H01L2224/83191 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01079 ,  Y10T428/2848 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401

摘要： A multifunction tape for a semiconductor package and configured to bond to a device-formed side of a semiconductor substrate having a plurality of devices thereon while performing a process of grinding a side of the semiconductor substrate opposite to the device-formed side and a process of dicing the semiconductor substrate into individual chips with a dicing tape having a UV-curable adhesive layer bonded to the ground side of the semiconductor substrate, the multifunction tape being bonded to the individual chips while the individual chips, separated from each other by the dicing process, are picked up and die-attached and a method of manufacturing a semiconductor device using the same, the multifunction tape including a base film; a UV-curable adhesive layer on one side of the base film; and first and second bonding layers on the adhesive layer.

摘要翻译： 一种用于半导体封装的多功能带，并且被配置为在其上具有多个器件的半导体衬底的器件形成侧上结合，同时进行研磨与器件形成侧相对的半导体衬底的侧面的工艺，以及 使用具有与半导体衬底的接地侧结合的可UV固化粘合剂层的切割带将半导体衬底切割成单个芯片，多功能带被粘合到各个芯片，而各个芯片通过切割工艺彼此分离 ，并且使用其制造使用该半导体器件的半导体器件的方法，所述多功能带包括基膜; 在基膜的一侧上的UV固化粘合剂层; 以及粘合剂层上的第一和第二粘结层。

公开(公告)号：US20100330780A1

公开(公告)日：2010-12-30

申请号：US12881577

申请日：2010-09-14

申请人： Yong Ha HWANG ,  Jae Hyun Cho ,  Gyu Seok Song ,  Chang Beom Chung

发明人： Yong Ha HWANG ,  Jae Hyun Cho ,  Gyu Seok Song ,  Chang Beom Chung

IPC分类号： H01L21/78 ,  B32B7/12

CPC分类号： H01L21/6835 ,  C09J7/20 ,  C09J7/35 ,  C09J7/38 ,  C09J2201/36 ,  C09J2203/326 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/27 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/29082 ,  H01L2224/73104 ,  H01L2224/83191 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01079 ,  Y10T428/2848 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401

摘要： A multifunction tape for a semiconductor package and configured to bond to a device-formed side of a semiconductor substrate having a plurality of devices thereon while performing a process of grinding a side of the semiconductor substrate opposite to the device-formed side and a process of dicing the semiconductor substrate into individual chips with a dicing tape having a UV-curable adhesive layer bonded to the ground side of the semiconductor substrate, the multifunction tape being bonded to the individual chips while the individual chips, separated from each other by the dicing process, are picked up and die-attached and a method of manufacturing a semiconductor device using the same, the multifunction tape including a base film; a UV-curable adhesive layer on one side of the base film; and first and second bonding layers on the adhesive layer.

摘要翻译： 一种用于半导体封装的多功能带，并且被配置为在其上具有多个器件的半导体衬底的器件形成侧上结合，同时进行研磨与器件形成侧相对的半导体衬底的侧面的工艺， 使用具有与半导体衬底的接地侧结合的可UV固化粘合剂层的切割带将半导体衬底切割成单个芯片，多功能带被粘合到各个芯片，而各个芯片通过切割工艺彼此分离 ，并且使用其制造使用该半导体器件的半导体器件的方法，所述多功能带包括基膜; 在基膜的一侧上的UV固化粘合剂层; 以及粘合剂层上的第一和第二粘结层。

公开(公告)号：US20080160300A1

公开(公告)日：2008-07-03

申请号：US12005403

申请日：2007-12-27

申请人： Yong Ha Hwang ,  Gyu Seok Song ,  Hee Yeon Ki ,  Kyoung Jin Ha ,  Jae Hyun Cho ,  Jun Suk Kim ,  Chang Beom Chung

发明人： Yong Ha Hwang ,  Gyu Seok Song ,  Hee Yeon Ki ,  Kyoung Jin Ha ,  Jae Hyun Cho ,  Jun Suk Kim ,  Chang Beom Chung

IPC分类号： B32B7/12 ,  C08J3/28

CPC分类号： B32B7/12 ,  C08L33/14 ,  C08L75/04 ,  C08L2666/04 ,  C08L2666/18 ,  C09J7/20 ,  C09J133/08 ,  C09J2201/36 ,  C09J2203/326 ,  C09J2205/31 ,  C09J2433/00 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/1461 ,  Y10T428/2809 ,  H01L2924/00 ,  H01L2924/3512

摘要： A composition, including a polymer binder resin A, a UV-curing acrylate B, a heat curing agent C, and a photopolymerization initiator D. The composition includes about 20 to about 150 parts by weight of the UV-curing acrylate B per 100 parts by weight of the polymer binder resin A, and the UV-curing acrylate B is a solid or near-solid at room temperature and has a viscosity of about 10,000 cps or more at 40° C.

摘要翻译： 包含聚合物粘合剂树脂A，UV固化丙烯酸酯B，热固化剂C和光聚合引发剂D的组合物。该组合物包含每100份约20至约150重量份的UV固化丙烯酸酯B 的聚合物粘合剂树脂A，并且UV固化丙烯酸酯B在室温下为固体或近固体，并且在40℃具有约10,000cps或更高的粘度

公开(公告)号：US08623512B2

公开(公告)日：2014-01-07

申请号：US12970045

申请日：2010-12-16

申请人： Ah Ram Pyun ,  Jae Hyun Cho ,  Ki Tae Song

发明人： Ah Ram Pyun ,  Jae Hyun Cho ,  Ki Tae Song

IPC分类号： B32B27/38 ,  C08G59/62 ,  C09J163/00 ,  H01L21/02

CPC分类号： C09J163/00 ,  C08G59/621 ,  C08L63/00 ,  C08L2205/02 ,  Y10T428/31511

摘要： An adhesive composition for stealth dicing of a semiconductor, an adhesive film, and a semiconductor device including the adhesive film, the adhesive composition including a polymer resin, the polymer resin having a glass transition temperature of about 5° C. to about 35° C., an epoxy resin, the epoxy resin including a liquid epoxy resin and a solid epoxy resin, a phenolic resin curing agent, an inorganic filler, a curing catalyst, and a silane coupling agent.

摘要翻译： 一种用于半导体的隐形切割的粘合剂组合物，粘合剂膜和包括粘合剂膜的半导体器件，该粘合剂组合物包括聚合物树脂，该聚合物树脂的玻璃化转变温度为约5℃至约35℃ 环氧树脂，包括液体环氧树脂和固体环氧树脂的环氧树脂，酚醛树脂固化剂，无机填料，固化催化剂和硅烷偶联剂。

公开(公告)号：US20110152394A1

公开(公告)日：2011-06-23

申请号：US12970045

申请日：2010-12-16

申请人： Ah Ram PYUN ,  Jae Hyun Cho ,  Ki Tae Song

发明人： Ah Ram PYUN ,  Jae Hyun Cho ,  Ki Tae Song

IPC分类号： C09J163/00

CPC分类号： C09J163/00 ,  C08G59/621 ,  C08L63/00 ,  C08L2205/02 ,  Y10T428/31511

摘要： An adhesive composition for stealth dicing of a semiconductor, an adhesive film, and a semiconductor device including the adhesive film, the adhesive composition including a polymer resin, the polymer resin having a glass transition temperature of about 5° C. to about 35° C., an epoxy resin, the epoxy resin including a liquid epoxy resin and a solid epoxy resin, a phenolic epoxy resin curing agent, an inorganic filler, a curing catalyst, and a silane coupling agent.

摘要翻译： 一种用于半导体的隐形切割的粘合剂组合物，粘合剂膜和包括粘合剂膜的半导体器件，该粘合剂组合物包括聚合物树脂，该聚合物树脂的玻璃化转变温度为约5℃至约35℃ 环氧树脂，包括液体环氧树脂和固体环氧树脂的环氧树脂，酚醛环氧树脂固化剂，无机填料，固化催化剂和硅烷偶联剂。

公开(公告)号：US20100148181A1

公开(公告)日：2010-06-17

申请号：US12388846

申请日：2009-02-19

申请人： Byoung Deog Choi ,  Jun Sin YI ,  Sung Wook Jung ,  Kyung Soo Jang ,  Jae Hyun Cho

发明人： Byoung Deog Choi ,  Jun Sin YI ,  Sung Wook Jung ,  Kyung Soo Jang ,  Jae Hyun Cho

IPC分类号： H01L29/792 ,  H01L21/20 ,  H01L29/04 ,  H01L21/336

CPC分类号： H01L21/02532 ,  H01L21/02436 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28282 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

摘要： Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

摘要翻译： 提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。 形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。 在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

公开(公告)号：US5758510A

公开(公告)日：1998-06-02

申请号：US698698

申请日：1996-08-16

申请人： Jae Hyun Cho

发明人： Jae Hyun Cho

IPC分类号： F25B5/00 ,  F25B1/00 ,  F25B5/04 ,  F25B41/04

CPC分类号： F25B5/04 ,  F25B2400/23

摘要： A phase separator of a time shared dual evaporator cycle refrigerator includes an attachment unit formed at the end of a suction pipe and a cap formed at the attachment unit which prevents a flow of liquid refrigerant into a compressor. The liquid refrigerant which is flowing into a refrigerator compartment evaporator is expanded in a second capillary tube to be evaporated in a freezer compartment evaporator, and is then returned into the compressor. A refrigerant controlling unit determines the path of the refrigerant.

摘要翻译： 时间共享双蒸发器循环冷冻机的分相器包括形成在吸入管的端部处的附接单元和形成在附接单元处的盖，其防止液体制冷剂流入压缩机。 流入冷藏室蒸发器的液体制冷剂在第二毛细管中膨胀，在冷冻室蒸发器中蒸发，然后返回压缩机。 制冷剂控制单元确定制冷剂的路径。