公开(公告)号：US20140224177A1

公开(公告)日：2014-08-14

申请号：US14126656

申请日：2012-05-30

申请人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim ,  Hong Joo Bang ,  Min Seok Kim

发明人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim ,  Hong Joo Bang ,  Min Seok Kim

IPC分类号： H01L21/02 ,  B05B1/00

CPC分类号： H01L21/02104 ,  B05B1/005 ,  H01J37/3244 ,  H01L21/68764 ,  H01L21/68771

摘要： Provided is a substrate processing apparatus which include a process chamber in which a plurality of substrates are accommodated to be processed, a support member mounted at the process chamber and having the same plane on which a plurality of substrate are placed, an injection member mounted opposite to the support member and including a plurality of independent baffles to independently inject the least one reactive gas and the purge gas at positions respectively corresponding to the plurality of substrates placed on the support member, and a driving unit adapted to rotate the support member or the injection member such that the baffles of the injection member sequentially revolve around the plurality of respective substrates. The injection member includes a plasma generator mounted at least one of the baffles to plasmatize a reactive gas injected to a substrate.

摘要翻译： 提供了一种基板处理装置，其包括处理室，多个基板被容纳在待处理中，支撑构件安装在处理室处，并且具有放置多个基板的相同平面;注射构件安装成相对 并且包括多个独立的挡板，以在分别对应于放置在支撑构件上的多个基板的位置处独立地注入至少一个反应气体和吹扫气体;以及驱动单元，其适于使支撑构件或 注射构件，使得注射构件的挡板顺序围绕多个相应的基底旋转。 注射构件包括安装至少一个挡板的等离子体发生器，以等离子体化注入衬底的反应气体。

公开(公告)号：US20130276983A1

公开(公告)日：2013-10-24

申请号：US13993277

申请日：2012-01-12

申请人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim ,  Kazuyuki Toyoda ,  Osamu Kasahara ,  Tetsuaki Inada

发明人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim ,  Kazuyuki Toyoda ,  Osamu Kasahara ,  Tetsuaki Inada

IPC分类号： H01L21/203 ,  H01L21/3065

CPC分类号： H01L21/203 ,  C23C16/45563 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32633 ,  H01J37/32733 ,  H01L21/3065

摘要： A plasma processing apparatus may include a process chamber configured to perform a plasma using process and contain a plurality of substrates, a support member provided in the process chamber, the substrates being laid on the same level of the support member, an injection member provided to face the support member and include a plurality of baffles, such that at least one reaction gas and a purge gas can be injected onto the substrates in an independent manner, and a driving part configured to rotate the support member or the injection member, such that the baffles of the injection member can orbit with respect to the plurality of the substrates laid on the support member. The injection member may include a plasma generator, which may be provided on at least one, configured to inject the reaction gas, of the baffles to turn the reaction gas into plasma.

摘要翻译： 等离子体处理装置可以包括处理室，其被配置为执行等离子体使用过程并且容纳多个基板，设置在处理室中的支撑构件，基板被放置在支撑构件的同一水平面上， 面对支撑构件并且包括多个挡板，使得可以以独立的方式将至少一个反应气体和吹扫气体注入到基板上，以及驱动部件，其构造成使支撑构件或注射构件旋转，使得 注射构件的挡板可以相对于布置在支撑构件上的多个基板进行轨道运动。 注射构件可以包括等离子体发生器，其可以设置在至少一个构造成用于注入反应气体的挡板上，以将反应气体转化为等离子体。

公开(公告)号：US20130118407A1

公开(公告)日：2013-05-16

申请号：US13811989

申请日：2011-03-16

申请人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim

发明人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim

IPC分类号： C23C16/46

CPC分类号： C23C16/46 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4584 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

摘要： The present disclosure relates to a deposition apparatus used to manufacture a semiconductor device including a process chamber; a substrate susceptor installed in the process chamber and including a plurality of concentrically arranged stages on which substrates are positioned; a plurality of members for supplying reaction gas; a member for supplying purge gas; a spray member including a plurality of baffles for independently spraying reaction gas and purge gas, supplied from the plurality of members supplying reaction gas and the member supplying purge gas, on the entirety of the treating surfaces of the substrate, in positions corresponding respectively to the substrates positioned on the stages; and a driving unit for rotating the substrate susceptor or the spray member in order for the baffles of the spray member to sequentially revolve each of the plurality of substrates positioned on the stages.

摘要翻译： 本公开涉及一种用于制造包括处理室的半导体器件的沉积设备; 衬底基座，安装在所述处理室中并且包括多个同心布置的阶段，基板被放置在所述阶段上; 多个用于提供反应气体的构件; 供应吹扫气体的成员; 喷射构件，其包括多个挡板，用于独立地喷射反应气体和吹扫气体，所述反应气体和吹扫气体从供给反应气体的多个构件和供给吹扫气体的构件供给到基板的整个处理表面上，分别对应于 位于台架上的基板; 以及驱动单元，用于旋转基板基座或喷射构件，以便喷射构件的挡板顺序地旋转位于台上的多个基板中的每一个。

公开(公告)号：US09567673B2

公开(公告)日：2017-02-14

申请号：US13811989

申请日：2011-03-16

申请人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim

发明人： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim

IPC分类号： C23C16/46 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/46 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4584 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

摘要： The present disclosure relates to a deposition apparatus used to manufacture a semiconductor device including a process chamber; a substrate susceptor installed in the process chamber and including a plurality of concentrically arranged stages on which substrates are positioned; a plurality of members for supplying reaction gas; a member for supplying purge gas; a spray member including a plurality of baffles for independently spraying reaction gas and purge gas, supplied from the plurality of members supplying reaction gas and the member supplying purge gas, on the entirety of the treating surfaces of the substrate, in positions corresponding respectively to the substrates positioned on the stages; and a driving unit for rotating the substrate susceptor or the spray member in order for the baffles of the spray member to sequentially revolve each of the plurality of substrates positioned on the stages.

摘要翻译： 本公开涉及一种用于制造包括处理室的半导体器件的沉积设备; 衬底基座，安装在所述处理室中并且包括多个同心布置的阶段，基板被放置在所述阶段上; 多个用于提供反应气体的构件; 供应吹扫气体的成员; 喷射构件，其包括多个挡板，用于独立地喷射反应气体和吹扫气体，所述反应气体和吹扫气体从供给反应气体的多个构件和供给吹扫气体的构件供给到基板的整个处理表面上，分别对应于 位于台架上的基板; 以及驱动单元，用于旋转基板基座或喷射构件，以便喷射构件的挡板顺序地旋转位于台上的多个基板中的每一个。

公开(公告)号：US06786097B2

公开(公告)日：2004-09-07

申请号：US10184727

申请日：2002-06-27

申请人： Tai Kyong Song ,  Dong Yeul Kim

发明人： Tai Kyong Song ,  Dong Yeul Kim

IPC分类号： G01N2906

CPC分类号： G01S15/8961 ,  G01N2291/02491 ,  G01N2291/0258 ,  G01S7/52038

摘要： An ultrasound imaging system and method for making a harmonic image of a good SNR (signal-to-noise ratio) by effectively removing fundamental frequency components through a pulse-compressing using weighted chirp signals, is provided. The ultrasound imaging system includes: a transducer array for converting weighted chirp signals to ultrasound signals, and transmitting the ultrasound signals to a target object; a receiver for receiving signals reflected from the target object; a pulse-compressor for selectively pulse-compressing fundamental frequency components or harmonic frequency components in the reflected signals; and a producer for producing receive-focused signals from the pulse-compressed signals. Therefore, the ultrasound imaging system can form ultrasound image using the fundamental frequency components, and can form ultrasound harmonic image using the harmonic frequency components according to 2fo-correlation method or 2fo-correlation (PI) method.

摘要翻译： 提供了一种通过使用加权啁啾信号通过脉冲压缩有效地去除基本频率分量来制造具有良好SNR（信噪比）的谐波图像的超声成像系统和方法。 所述超声波成像系统包括：用于将加权啁啾信号转换为超声信号的换能器阵列，以及将所述超声信号发送到目标物体; 用于接收从目标对象反射的信号的接收器; 脉冲压缩器，用于选择性地脉冲压缩反射信号中的基频分量或谐波频率分量; 以及用于从脉冲压缩信号产生接收聚焦信号的生成器。 因此，超声成像系统可以使用基频分量形成超声波图像，并且可以使用根据2相关方法或2相关（PI）方法的谐波频率分量形成超声波谐波图像。