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    WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME
    1.
    发明申请
    WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME 审中-公开
    用于发光二极管的波长转换芯片及其制造方法

    公开(公告)号：US20140198528A1

    公开(公告)日：2014-07-17

    申请号：US14239100

    申请日：2011-08-17

    申请人： Yong Tae KIim ,  Tomio Inoue ,  Je Won Kim ,  Tsuyoshi Tsutsui ,  Jong Ho Lee ,  Seung Wan Chae

    发明人： Yong Tae KIim ,  Tomio Inoue ,  Je Won Kim ,  Tsuyoshi Tsutsui ,  Jong Ho Lee ,  Seung Wan Chae

    IPC分类号： H01L33/50 ,  F21V8/00

    CPC分类号： G02B6/0073 ,  H01L33/486 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

    摘要： There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.

    摘要翻译： 提供一种制造波长转换LED芯片的方法，包括将多个LED芯片附接到临时支撑板的上表面的芯片对准区域，在各个LED芯片的电极上形成导电凸块，形成 含磷光体的树脂封装部分在芯片取向区域中覆盖导电凸块，抛光含荧光体的树脂封装部分，通过在LED芯片之间切割提供的含磷树脂封装部分，形成波长转换的LED芯片，波长转换的LED芯片 包括由含荧光体的树脂封装部分形成的波长转换层，并形成在波长转换的LED芯片的侧面和上表面上，并从波长转换的LED芯片上去除临时支撑板。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY
    2.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY 审中-公开
    制造半导体发光元件和制造半导体发光元件的方法

    公开(公告)号：US20140183589A1

    公开(公告)日：2014-07-03

    申请号：US14237515

    申请日：2011-08-09

    申请人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

    发明人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

    IPC分类号： H01L33/00 ,  H01L33/60

    CPC分类号： H01L33/005 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/60

    摘要： There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.

    摘要翻译： 提供一种制造半导体发光器件和由此制造的半导体发光器件的方法。 根据示例性实施例，制造半导体发光器件的方法包括：通过在衬底的第一主表面上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构 所述基板具有彼此相对的第一和第二主表面; 在所述基板的所述第二主表面上形成反射膜，所述反射膜包括至少一个激光吸收区域; 以及通过从对应于所述激光吸收区域的所述发光结构的顶部的一部分照射激光而将所述发光结构和所述衬底分离成器件单元的划线处理到所述发光结构和所述衬底。

    SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME 失效
    半导体发光二极管芯片和发光器件使用它

    公开(公告)号：US20120286309A1

    公开(公告)日：2012-11-15

    申请号：US13279782

    申请日：2011-10-24

    申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    IPC分类号： H01L33/46

    CPC分类号： H01L33/46 ,  H01L33/20

    摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

    摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

    Semiconductor light emitting diode chip and light emitting device using the same
    5.
    发明授权
    Semiconductor light emitting diode chip and light emitting device using the same 失效
    半导体发光二极管芯片和发光装置使用相同

    公开(公告)号：US08487334B2

    公开(公告)日：2013-07-16

    申请号：US13279782

    申请日：2011-10-24

    申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/20

    摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

    摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

    Semiconductor light emitting device having multi-cell array and method for manufacturing the same
    6.
    发明授权
    Semiconductor light emitting device having multi-cell array and method for manufacturing the same 有权
    具有多单元阵列的半导体发光器件及其制造方法

    公开(公告)号：US08637897B2

    公开(公告)日：2014-01-28

    申请号：US13035063

    申请日：2011-02-25

    申请人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

    发明人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

    摘要翻译： 半导体发光器件包括衬底和布置在衬底上的多个发光单元。 每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层发射蓝色光。 互连结构将一个发光单元的第一导电型和第二导电型半导体层电连接到另一发光单元的第一导电型和第二导电型半导体层。 在由发光单元限定的发光区域中形成光转换部分，并且包括分别具有红色和/或绿色光转换材料的红色和/或绿色光转换部分。

    Semiconductor light emitting device having multi-cell array and method for manufacturing the same
    7.
    发明授权
    Semiconductor light emitting device having multi-cell array and method for manufacturing the same 有权
    具有多单元阵列的半导体发光器件及其制造方法

    公开(公告)号：US08598619B2

    公开(公告)日：2013-12-03

    申请号：US13034136

    申请日：2011-02-24

    申请人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

    发明人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

    摘要翻译： 半导体发光器件包括衬底和布置在衬底上的多个发光单元。 每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层发射蓝色光。 互连结构将一个发光单元的第一导电型和第二导电型半导体层电连接到另一发光单元的第一导电型和第二导电型半导体层。 在由发光单元限定的发光区域中形成光转换部分，并且包括分别具有红色和/或绿色光转换材料的红色和/或绿色光转换部分。

    Safety outlet
    8.
    发明授权
    Safety outlet 有权

    公开(公告)号：US11223159B2

    公开(公告)日：2022-01-11

    申请号：US16674228

    申请日：2019-11-05

    申请人： Jong Ho Lee

    发明人： Jong Ho Lee

    IPC分类号： H01R13/52 ,  H01R33/965 ,  H01R13/18 ,  H01R13/10

    摘要： Disclosed herein is a safety outlet. The safety outlet includes a casing having at least one hole into which a pin of a plug is inserted; and at least one drain pipe forming a drain channel for independently communicating the at least one hole and the outside of the casing; wherein the drain channel provided in the at least one drain pipe each serves as drain passage separated from each other, and the drain pipe is partitioned so as to maintain sealing between inside of the casing and the drain channel, wherein a contact portion connected to a power terminal arranged outside of the at least one drain pipe is provided in the at least one drain pipe.

    Multilayer ceramic electronic component and method of manufacturing the same
    10.
    发明授权
    Multilayer ceramic electronic component and method of manufacturing the same 有权
    多层陶瓷电子元件及其制造方法

    公开(公告)号：US08630082B2

    公开(公告)日：2014-01-14

    申请号：US13491192

    申请日：2012-06-07

    申请人： Jong Ho Lee ,  Sung Chul Bae ,  Jae Yeol Choi ,  Sung Woo Kim ,  Yu Na Kim

    发明人： Jong Ho Lee ,  Sung Chul Bae ,  Jae Yeol Choi ,  Sung Woo Kim ,  Yu Na Kim

    IPC分类号： H01G4/005

    CPC分类号： H01G4/30 ,  H01G4/0085 ,  H01G4/012 ,  H01G4/12

    摘要： There are provided a multilayer ceramic electronic component and a method of manufacturing the same, the multilayer ceramic electronic including: a ceramic body; and a plurality of internal electrodes laminated within the ceramic body, wherein, when T1 is the greatest distance between an upper outermost internal electrode and a lower outermost internal electrode among the plurality of internal electrodes and T2 is the distance between the highest point and the lowest point in each of the upper outermost internal electrode and the lower outermost internal electrode in a thickness direction of the ceramic body, T2/T1

    摘要翻译： 提供了一种多层陶瓷电子部件及其制造方法，所述多层陶瓷电子器件包括：陶瓷体; 以及层叠在所述陶瓷体内的多个内部电极，其中，当所述多个内部电极中的最外侧内部电极与最外侧内部电极之间的距离为T1时，T2为最高点与最低点之间的距离 在陶瓷体的厚度方向上的最外侧内部电极和下部最外侧的内部电极中的每一个点都满足T2 / T1 <0.05，因此可能抑制多层陶瓷电子部件的内部电极的排列缺陷 。