摘要:
Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.
摘要:
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要:
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要:
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolated the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要:
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要:
Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
摘要:
Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
摘要:
A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.
摘要:
A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.
摘要:
A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.