公开(公告)号：US08350208B1

公开(公告)日：2013-01-08

申请号：US13011475

申请日：2011-01-21

申请人： Yong-Hang Zhang ,  Ding Ding ,  Elizabeth Steenbergen

发明人： Yong-Hang Zhang ,  Ding Ding ,  Elizabeth Steenbergen

IPC分类号： H01J31/00 ,  H01J40/14

CPC分类号： H01L27/14647 ,  H01L27/14636 ,  H01L31/0687 ,  H01L31/0725

摘要： Two-terminal multi junction photodetectors and focal plane arrays for multi-color detection or imaging acquisition can be formed by connecting photodiodes with different bandgaps or wavelengths, through tunnel diodes, in series with the same polarization. Under reverse bias in the dark, the total current going through such multi junction photodetectors is dictated by the smallest reverse saturation current of the photodiodes. When in operating mode, a set of light sources with different wavelengths corresponding to each individual photodiode can be used to optically bias all the photodiodes except the detecting photodiode Under illumination, all other photodiodes work in the photovoltaic mode and have much higher maximum possible reverse currents than the detecting photodiode. As a result, the total current of the multi junction photodetector is dictated by the detecting photodiode. Therefore, a total current can be read by, for example, read-out circuits to give the optical signal strength at that specific wavelength of the detecting photodiode. By using an algorithm one can use such multi junction photodetectors to detect different wavelengths and to take multicolor images.

摘要翻译： 可以通过连接具有不同带隙或波长的光电二极管，通过隧道二极管与相同的极化串联，形成用于多色检测或成像采集的两端多结光电探测器和焦平面阵列。 在黑暗中的反向偏置下，通过这种多结光电探测器的总电流由光电二极管的最小反向饱和电流决定。 当处于工作模式时，可以使用一组与各个光电二极管相对应的具有不同波长的光源来光学偏置检测光电二极管外的所有光电二极管。在照明下，所有其他光电二极管工作在光伏模式，并具有高得多的最大可能反向电流 比检测光电二极管。 结果，多结光电检测器的总电流由检测光电二极管决定。 因此，可以通过例如读出电路来读取总电流，以在检测光电二极管的特定波长处给出光信号强度。 通过使用算法，可以使用这种多结光电探测器来检测不同波长并采取多色图像。

公开(公告)号：US20120073638A1

公开(公告)日：2012-03-29

申请号：US13238847

申请日：2011-09-21

申请人： Yong-Hang Zhang ,  Ding Ding

发明人： Yong-Hang Zhang ,  Ding Ding

IPC分类号： H01L29/267 ,  H01L31/0328

CPC分类号： H01L31/0687 ,  H01L31/02966 ,  H01L31/03046 ,  Y02B10/10 ,  Y02E10/544

摘要： Lattice-matched II-VI (ZnCdHg)(SeTe) and III-V (InGaAsP) semiconductors grown on InP substrates can be used for preparing multi junction solar cells that can potentially reach efficiencies greater than 40% under one sun. For example, a semiconductor structure can be prepared comprising, an InP substrate; an optional InGaAsP building block formed over the InP substrate; an InP building block formed over either the InGaAsP building block, when present, or the InP substrate and at least one (ZnCdHg)(SeTe) building block formed over the InP building block.

摘要翻译： 在InP衬底上生长的晶格匹配的II-VI（ZnCdHg）（SeTe）和III-V（InGaAsP））半导体可用于制备在一个太阳下潜在地达到40％以上的效率的多结太阳能电池。 例如，可以制备半导体结构，其包括：InP衬底; 形成在InP衬底上的可选InGaAsP结构单元; 形成在InGaAsP结构单元上，当存在时，或InP衬底和至少一个（ZnCdHg）（SeTe）构件块形成在InP构件上的InP构件块。

公开(公告)号：US20100301454A1

公开(公告)日：2010-12-02

申请号：US12743113

申请日：2008-11-10

申请人： Yong-Hang Zhang ,  Shade R. Johnson ,  Shui-Qing Yu ,  Ding Ding ,  Songnan Wu

发明人： Yong-Hang Zhang ,  Shade R. Johnson ,  Shui-Qing Yu ,  Ding Ding ,  Songnan Wu

IPC分类号： H01L29/22 ,  H01L29/20 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L31/0687 ,  Y02B10/10 ,  Y02E10/544

摘要： The present invention provides semiconductor structures comprising a substrate and at least three III-V and/or II-VI multi junction building blocks, each comprising a p-n junction having at least two alloy layers, formed over the substrate, provided at least one multi-junction building block comprises II-VI alloy layers. Further described are methods for preparing semiconductor structures utilizing a sacrificial or etch-stop ternary III-V alloy layer over an III-V substrate.

摘要翻译： 本发明提供了包括衬底和至少三个III-V和/或II-VI多结构建块的半导体结构，每个III-V和/或II-VI多结构建块包括形成在衬底上的具有至少两个合金层的pn结， 结构构件包括II-VI合金层。 进一步描述了利用在III-V衬底上的牺牲或蚀刻停止三元III-V合金层制备半导体结构的方法。

公开(公告)号：US09794952B2

公开(公告)日：2017-10-17

申请号：US14440339

申请日：2013-09-17

申请人： Gaopeng Du ,  Qun Li ,  Zijiang Ma ,  Shouyong Zhang ,  Ding Ding

发明人： Gaopeng Du ,  Qun Li ,  Zijiang Ma ,  Shouyong Zhang ,  Ding Ding

IPC分类号： H04H20/71 ,  H04W72/10 ,  H04W4/06 ,  H04W4/10 ,  H04W74/04

CPC分类号： H04W72/10 ,  H04W4/06 ,  H04W4/10 ,  H04W74/04

摘要： A method for implementing speaking right seizing of an LTE-based broadband cluster system, an MME, a network subsystem, a broadband wireless access subsystem and the LTE-based broadband cluster system are disclosed. The method includes: the broadband wireless access subsystem sending a trunking speaking right update request to the network subsystem, receiving trunking speaking right update accept message returned by the network subsystem, and sending the trunking speaking right update accept message to the speaking right seizing terminal; the broadband wireless access subsystem, the network subsystem and the speaking right terminal interacting to complete a trunking speaking right context modification; and the broadband wireless access subsystem receiving speaking right occupation prompt message sent by the network subsystem, and sending trunking speaking right occupation prompt message to the speaking right terminal and the speaking right seizing terminal via a multicast control channel of an eMBMS and updating configuration information.

公开(公告)号：US20230146219A1

公开(公告)日：2023-05-11

申请号：US17614507

申请日：2021-11-08

申请人： Ding Ding

发明人： Ding Ding

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5253 ,  H01L27/3246 ,  H01L27/3276

摘要： A display device includes a display region and a non-display region. The display device includes a substrate; a non-organic insulation layer disposed on a side of the substrate; wherein a first groove is defined in the non-organic insulation layer corresponding to the non-display region, an opening of the first groove is away from the substrate, and a metal retaining wall is disposed in the first groove; a light-emitting layer disposed on a side of the non-organic insulation layer away from the substrate; and an encapsulation layer disposed on a side of the light-emitting layer away from the substrate and extending from the display region to the non-display region. Wherein, the encapsulation layer is overlapped with the first groove in the non-display region, and a first gap is between an edge of the encapsulation layer and an edge of the non-organic insulation layer.

公开(公告)号：US20150282199A1

公开(公告)日：2015-10-01

申请号：US14440339

申请日：2013-09-17

申请人： Gaopeng Du ,  Qun Li ,  Zijiang Ma ,  Shouyong Zhang ,  Ding Ding

发明人： Gaopeng Du ,  Qun Li ,  Zijiang Ma ,  Shouyong Zhang ,  Ding Ding

IPC分类号： H04W72/10 ,  H04W74/04 ,  H04W4/06

CPC分类号： H04W72/10 ,  H04W4/06 ,  H04W4/10 ,  H04W74/04

摘要： A method for implementing speaking right seizing of an LTE-based broadband cluster system, an MME, a network subsystem, a broadband wireless access subsystem and the LTE-based broadband cluster system are disclosed. The method includes: the broadband wireless access subsystem sending a trunking speaking right update request to the network subsystem, receiving trunking speaking right update accept message returned by the network subsystem, and sending the trunking speaking right update accept message to the speaking right seizing terminal; the broadband wireless access subsystem, the network subsystem and the speaking right terminal interacting to complete a trunking speaking right context modification; and the broadband wireless access subsystem receiving speaking right occupation prompt message sent by the network subsystem, and sending trunking speaking right occupation prompt message to the speaking right terminal and the speaking right seizing terminal via a multicast control channel of an eMBMS and updating configuration information.

摘要翻译： 公开了一种实现基于LTE的宽带集群系统，MME，网络子系统，宽带无线接入子系统和基于LTE的宽带集群系统的说话权利的方法。 该方法包括：宽带无线接入子系统向网络子系统发送中继讲话权更新请求，接收网络子系统返回的中继讲话权更新接收消息，向发言权扣留终端发送中继讲话权更新接收消息; 宽带无线接入子系统，网络子系统和讲话终端进行交互，完成中继语音权限上下文修改; 宽带无线接入子系统接收网络子系统发出的说话权占用提示消息，通过eMBMS的组播控制信道向会话终端和会话权限终端发送中继讲话权占用提示消息，并更新配置信息。