公开(公告)号：US08343881B2

公开(公告)日：2013-01-01

申请号：US12794713

申请日：2010-06-04

申请人： Yong-Won Lee ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Li-Qun Xia ,  Prahallad Iyengar ,  Sanjeev Baluja ,  Scott A Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Derek R Witty

发明人： Yong-Won Lee ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Li-Qun Xia ,  Prahallad Iyengar ,  Sanjeev Baluja ,  Scott A Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Derek R Witty

IPC分类号： H01L29/06 ,  H01L21/31 ,  C23C16/448

CPC分类号： H01L21/02271 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/0332 ,  H01L21/76898

摘要： A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.

摘要翻译： 使用包含BDEAS和含氧气体如臭氧的工艺气体将二氧化硅层沉积到衬底上。 二氧化硅层可以是包括抗蚀剂层的抗蚀刻堆叠的一部分。 在另一个版本中，二氧化硅层被沉积到通孔中以形成用于通硅通孔的氧化物衬垫。

公开(公告)号：US20120097330A1

公开(公告)日：2012-04-26

申请号：US12908617

申请日：2010-10-20

申请人： Prahallad Iyengar ,  Sanjeev Baluja ,  Dale R. DuBois ,  Juan Carlos Rocha-Alverez ,  Thomas Nowak ,  Scott A. Hendrickson ,  Yong-Won Lee ,  Mei-Yee Shek ,  Li-Qun Xia ,  Derek R. Witty

发明人： Prahallad Iyengar ,  Sanjeev Baluja ,  Dale R. DuBois ,  Juan Carlos Rocha-Alverez ,  Thomas Nowak ,  Scott A. Hendrickson ,  Yong-Won Lee ,  Mei-Yee Shek ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/465 ,  H01L21/46

CPC分类号： H01L21/02164 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/463 ,  C23C16/5096 ,  H01L21/02274

摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.

摘要翻译： 衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。 第一处理气体进入热处理器或等离子体发生器。 然后，第一处理气体直接通过喷头流入处理室。 第二处理气体流过穿过喷头的第二流路。 第一和第二处理气体混合在喷淋头下面，并且一层材料沉积在喷头下方的基底上。

公开(公告)号：US20120276301A1

公开(公告)日：2012-11-01

申请号：US13545738

申请日：2012-07-10

申请人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee (Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

发明人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee (Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

IPC分类号： B05D5/12 ,  B05D3/06

CPC分类号： H01L21/76832 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

摘要翻译： 本文所述的实施例提供了一种处理衬底的方法。 该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。 在一个实施例中，提供了一种用于处理衬底的方法。 该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

公开(公告)号：US20090107626A1

公开(公告)日：2009-04-30

申请号：US12258300

申请日：2008-10-24

申请人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee(Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

发明人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee(Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

IPC分类号： B32B37/00

CPC分类号： H01L21/76832 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

摘要翻译： 本文所述的实施例提供了一种处理衬底的方法。 该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。 在一个实施例中，提供了一种用于处理衬底的方法。 该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

公开(公告)号：US07802538B2

公开(公告)日：2010-09-28

申请号：US11608333

申请日：2006-12-08

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US07166544B2

公开(公告)日：2007-01-23

申请号：US10931609

申请日：2004-09-01

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US08758638B2

公开(公告)日：2014-06-24

申请号：US13104314

申请日：2011-05-10

申请人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

公开(公告)号：US20120289049A1

公开(公告)日：2012-11-15

申请号：US13104314

申请日：2011-05-10

申请人： WEIFENG YE ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： WEIFENG YE ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

公开(公告)号：US08138104B2

公开(公告)日：2012-03-20

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20120196450A1

公开(公告)日：2012-08-02

申请号：US13365226

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。