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    BIOAVAILABLE FORMULATIONS OF HETEROCYCLIC COMPOUNDS
    5.
    发明申请
    BIOAVAILABLE FORMULATIONS OF HETEROCYCLIC COMPOUNDS 审中-公开
    杂环化合物的生物可利用配方

    公开(公告)号：US20080194638A1

    公开(公告)日：2008-08-14

    申请号：US12028058

    申请日：2008-02-08

    申请人： Mahendra G. DEDHIYA ,  Rahul Surana ,  Suneel K. Rastogi ,  Anil Chhetrry

    发明人： Mahendra G. DEDHIYA ,  Rahul Surana ,  Suneel K. Rastogi ,  Anil Chhetrry

    IPC分类号： A61K31/443 ,  C07D405/02 ,  A61P29/00 ,  A61P11/00 ,  A61P37/00

    CPC分类号： A61K31/443 ,  C07D405/04

    摘要： The present invention relates to bioavailable pharmaceutical formulations of heterocyclic compounds, such as such as N-(3,5-dichloropyrid-4-yl)-4-difluoromethoxy-8-methanesulfonamido-dibenzo[b,d]furan-1-carboxamide (oglemilast) and pharmaceutically acceptable salts thereof, to processes for their preparation and to methods of treatment using the same. The present invention also relates to substantially pure amorphous forms of heterocyclic compounds, such as oglemilast. The invention is particularly directed to bioavailable pharmaceutical oral dosage forms containing amorphous oglemilast.

    摘要翻译： 本发明涉及杂环化合物的生物可利用药物制剂，例如N-（3,5-二氯吡啶-4-基）-4-二氟甲氧基-8-甲磺酰氨基 - 二苯并[b，d]呋喃-1-甲酰胺（ 奥米米特）及其药学上可接受的盐，其制备方法和使用其的治疗方法。 本发明还涉及基本上纯的无定形形式的杂环化合物，例如奥格米司特。 本发明特别涉及含有无定形奥昔莫司的生物可利用药物口服剂型。

    System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
    7.
    发明授权
    System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss 有权
    用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗

    公开(公告)号：US07848839B2

    公开(公告)日：2010-12-07

    申请号：US12004730

    申请日：2007-12-21

    申请人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

    发明人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

    IPC分类号： G06F19/00 ,  G05B15/00

    CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/55 ,  H01L22/26

    摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.

    摘要翻译： 在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光 检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异 在所述至少一个第一强度和所述至少一个第二强度之间。 如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

    Technique for process-qualifying a semiconductor manufacturing tool using metrology data
    8.
    发明申请
    Technique for process-qualifying a semiconductor manufacturing tool using metrology data 失效
    使用测量数据处理半导体制造工具的技术

    公开(公告)号：US20050032459A1

    公开(公告)日：2005-02-10

    申请号：US10809906

    申请日：2004-03-26

    申请人： Rahul Surana ,  Ajoy Zutshi

    发明人： Rahul Surana ,  Ajoy Zutshi

    IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/10 ,  B24B49/12

    CPC分类号： B24B49/10 ,  B24B37/16 ,  B24B49/12

    摘要： A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen. In these cases, the technique involves transferring a wafer to each of the bulk removal polishing platen, copper clearing platen and barrier removal polishing platen, where qualification characteristics are measured from the wafer during processing. These platens are subsequently qualified by adjusting one or more parameters of a recipe associated with each platen in accordance with the qualification characteristics measured from the wafer, to target one or more platen specifications.

    摘要翻译： 本发明的技术利用来自单个晶片的鉴定特性来限定半导体制造工具。 一般来说，该技术开始于通过制造工具处理晶片。 在处理过程中，使用原位传感器或计量装置测量正确限定工具所需的一个或多个限定特性。 随后，通过根据从晶片测量的限定特性来调整配方的一个或多个参数以达到一个或多个制造工具规格，从而对制造工具进行限定。 在一些实施例中，要被认证的工具包括散装移除抛光压板，铜清除压板和屏障移除抛光压板。 在这些情况下，该技术涉及将晶片转移到每个散装移除抛光平台，铜清除压板和屏障去除抛光平台上，其中在处理期间从晶片测量鉴定特性。 这些压板随后通过根据从晶片测量的鉴定特性调整与每个压板相关联的配方的一个或多个参数来限定，以达到一个或多个压板规格。

    System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
    10.
    发明申请
    System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss 有权
    用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗

    公开(公告)号：US20080109104A1

    公开(公告)日：2008-05-08

    申请号：US12004730

    申请日：2007-12-21

    申请人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

    发明人： Ajoy Zutshi ,  Rahul Surana ,  Girish Dixit

    IPC分类号： G06F19/00 ,  G06F3/048 ,  G06F12/00 ,  G06F17/30

    CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/55 ,  H01L22/26

    摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.

    摘要翻译： 在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光 检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异 在所述至少一个第一强度和所述至少一个第二强度之间。 如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。