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261 条记录 (耗时 0.031 秒)

    Magnetic memory
    1.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US07848136B2

    公开(公告)日：2010-12-07

    申请号：US12100969

    申请日：2008-04-10

    申请人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

    发明人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

    IPC分类号： G11C11/15

    CPC分类号： G11B5/39

    摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

    摘要翻译： 可以减小写入电流而不引起写入特性的波动。 磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向 存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

    Magnetic memory
    5.
    发明申请
    Magnetic memory 审中-公开
    磁记忆

    公开(公告)号：US20050141148A1

    公开(公告)日：2005-06-30

    申请号：US11000093

    申请日：2004-12-01

    申请人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

    发明人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

    IPC分类号： G11B5/33 ,  G11B5/39

    CPC分类号： G11B5/39

    摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

    摘要翻译： 可以减小写入电流而不引起写入特性的波动。 磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向 存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

    Magnetic random access memory
    6.
    发明授权
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US06900490B2

    公开(公告)日：2005-05-31

    申请号：US10649986

    申请日：2003-08-28

    申请人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

    发明人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

    IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

    摘要： In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.

    摘要翻译： 在磁性随机存取存储器中，用于通过将电流传递到靠近MTJ元件布置的写布线中来产生感应磁通量，其电阻值根据包括两个磁性层的MTJ元件的两个磁性层的磁化阵列状态而变化， 磁性层对应于“0”/“1”的存储信息，并且通过改变MTJ元件的自由层的磁化方向来写入信息，MTJ元件的形状被扭曲以与磁场大体一致 从写布线产生的曲线。

    Magnetic memory device having yoke layer
    7.
    发明授权
    Magnetic memory device having yoke layer 有权
    具有轭层的磁存储器件

    公开(公告)号：US06879515B2

    公开(公告)日：2005-04-12

    申请号：US10926047

    申请日：2004-08-26

    申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

    摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

    Magnetic memory
    8.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06717845B2

    公开(公告)日：2004-04-06

    申请号：US10345253

    申请日：2003-01-16

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    IPC分类号： G11C1115

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

    摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。