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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08614455B2

    公开(公告)日：2013-12-24

    申请号：US13424687

    申请日：2012-03-20

    申请人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    发明人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE 审中-公开
    制造发光装置的方法

    公开(公告)号：US20110300651A1

    公开(公告)日：2011-12-08

    申请号：US12888558

    申请日：2010-09-23

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Susumu Obata ,  Hideo Nishiuchi

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Susumu Obata ,  Hideo Nishiuchi

    IPC分类号： H01L33/44

    CPC分类号： H01L33/0079 ,  H01L33/0075 ,  H01L33/486 ,  H01L2224/16 ,  H01L2933/0066

    摘要： According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.

    摘要翻译： 根据一个实施例，公开了一种用于制造发光器件的方法。 该方法可以包括在包括在第一结构体中的半导体层上形成第一电极和第二电极，该半导体层包括在基板上的发光层。 该方法可以包括形成与第一电极导通的第一金属柱和与第二电极导通的第二金属柱。 该方法可以包括用绝缘层填充第一金属柱和第二金属柱之间的区域。 此外，该方法可以包括从半导体层分离衬底，以及形成第二结构体，其中半导体层被绝缘层支撑并且朝向绝缘层的与半导体层相反的一侧凸出。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20120241792A1

    公开(公告)日：2012-09-27

    申请号：US13424687

    申请日：2012-03-20

    申请人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    发明人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    IPC分类号： H01L33/60 ,  H01L33/00

    CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    Semiconductor light emitting device and method for manufacturing same
    10.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09153746B2

    公开(公告)日：2015-10-06

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    发明人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    IPC分类号： H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L21/50

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。