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41 条记录 (耗时 0.037 秒)

    Magneto-resistive head using flux guide
    1.
    发明授权
    Magneto-resistive head using flux guide 失效
    磁阻头使用助焊剂

    公开(公告)号：US5583726A

    公开(公告)日：1996-12-10

    申请号：US435379

    申请日：1995-05-05

    申请人： Yoshifumi Mizoshita ,  Takao Koshikawa ,  Hitoshi Kanai ,  Junichi Kane ,  Yoshinori Otsuka ,  Yukinori Ikegawa

    发明人： Yoshifumi Mizoshita ,  Takao Koshikawa ,  Hitoshi Kanai ,  Junichi Kane ,  Yoshinori Otsuka ,  Yukinori Ikegawa

    IPC分类号： G11B5/02 ,  G11B5/31 ,  G11B5/39 ,  G11B19/04 ,  G11B5/33

    CPC分类号： G11B5/3916 ,  G11B19/04 ,  G11B5/02 ,  G11B5/3183 ,  G11B5/3903 ,  G11B5/3925 ,  G11B5/3967

    摘要： A magneto-resistive (MR) head has an MR layer in a space formed by shield layers by providing a distance enough to protect magnetic flux, flowing through the MR layer from a recording medium through a gap formed by the shield layers, from leaking out to the shield layers. A flux guide is provided between the MR layer and the gap and has an end magnetically connected to the MR extending over an effective area of the MR head, and another end having a width a little narrower than a width of track of the recording medium. A side of the MR layer, opposite to the side connected with the flux guide layer is placed in a narrow space formed at a corner of the space. Magnetic flux leaked from the gap due to a sense current flowing through the MR layer is eliminated by making a current flow through a recording coil layer or through an electrically conductive layer placed in the space.

    摘要翻译： 磁阻（MR）头在由屏蔽层形成的空间中具有MR层，通过提供足够的距离来保护磁通量，通过由屏蔽层形成的间隙从记录介质流过MR层，从而泄漏 到屏蔽层。 磁通引导件设置在MR层和间隙之间，并且具有与在MR磁头的有效区域上延伸的MR磁性连接的端部，另一端具有比记录介质的磁道宽度稍窄的宽度。 MR层的与与磁通引导层连接的一侧相对的一侧被放置在形成在该空间的角部的狭窄空间中。 通过使流过记录线圈层的电流或通过放置在该空间中的导电层而消除由于流过MR层的感测电流而从间隙泄漏的磁通。

    Horizontal type magneto-resistive head using flux guide
    2.
    发明授权
    Horizontal type magneto-resistive head using flux guide 失效
    水平型磁阻头使用磁通导向

    公开(公告)号：US5777827A

    公开(公告)日：1998-07-07

    申请号：US709270

    申请日：1996-09-06

    申请人： Yoshifumi Mizoshita ,  Takao Koshikawa ,  Hitoshi Kanai ,  Junichi Kane ,  Yoshinori Otsuka ,  Yukinori Ikegawa

    发明人： Yoshifumi Mizoshita ,  Takao Koshikawa ,  Hitoshi Kanai ,  Junichi Kane ,  Yoshinori Otsuka ,  Yukinori Ikegawa

    IPC分类号： G11B5/02 ,  G11B5/31 ,  G11B5/39 ,  G11B19/04 ,  G11B5/33

    CPC分类号： G11B5/3916 ,  G11B19/04 ,  G11B5/02 ,  G11B5/3183 ,  G11B5/3903 ,  G11B5/3925 ,  G11B5/3967

    摘要： A magneto-resistive (MR) head has an MR layer in a space formed by shield layers by providing a distance enough to protect magnetic flux, flowing through the MR layer from a recording medium through a gap formed by the shield layers, from leaking out to the shield layers. A flux guide is provided between the MR layer and the gap, and has an end magnetically connected to the MR, extending over an effective area of the MR head, and another end having a width a little narrower than a width of track of the recording medium. A side of the MR layer, opposite to the side connected with the flux guide layer is placed in a narrow space formed at a corner of the space. Magnetic flux leaked from the gap due to a sense current flowing through the MR layer is eliminated by making a current flow through a recording coil layer or through an electrically conductive layer placed in the space.

    摘要翻译： 磁阻（MR）头在由屏蔽层形成的空间中具有MR层，通过提供足够的距离来保护磁通量，通过由屏蔽层形成的间隙从记录介质流过MR层，从而泄漏 到屏蔽层。 磁通引导件设置在MR层和间隙之间，并且具有磁性地连接到MR的端部，延伸在MR磁头的有效区域上，另一端的宽度比记录的轨道的宽度稍窄 中。 MR层的与与磁通引导层连接的一侧相对的一侧被放置在形成在该空间的角部的狭窄空间中。 通过使流过记录线圈层的电流或通过放置在该空间中的导电层而消除由于流过MR层的感测电流而从间隙泄漏的磁通。

    Magnetoresistive head and magnetic recording apparatus
    4.
    发明授权
    Magnetoresistive head and magnetic recording apparatus 失效
    磁阻磁头和磁记录装置

    公开(公告)号：US5898546A

    公开(公告)日：1999-04-27

    申请号：US503006

    申请日：1995-07-17

    申请人： Hitoshi Kanai ,  Yoshifumi Mizoshita ,  Junichi Kane ,  Kenichi Aoshima

    发明人： Hitoshi Kanai ,  Yoshifumi Mizoshita ,  Junichi Kane ,  Kenichi Aoshima

    IPC分类号： G11B5/00 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  G11B5/3925 ,  G11B5/3967

    摘要： The present invention relates to a magnetoresistive head capable of converting a change in a magnetic field generated by a magnetic recording medium into a change in electric resistivity by utilizing spin valve magnetoresistance effect to read signal information. The magnetoresistive head comprises a first magnetic layer, a second magnetic layer formed on the first magnetic layer through a first nonmagnetic metal layer and magnetized in one direction, a third magnetic layer formed on the second magnetic layer through a second nonmagnetic metal layer, and an electric current supplying layer for applying a constant current to at least the third magnetic layer, the second nonmagnetic metal layer and the second magnetic layer in one of the same direction as and the opposite direction to the direction of magnetization of the second magnetic layer.

    摘要翻译： 本发明涉及一种能够通过利用自旋阀磁电阻效应将磁记录介质产生的磁场变化转换为电阻率变化的磁阻头。 磁阻头包括第一磁性层，通过第一非磁性金属层形成在第一磁性层上并沿一个方向磁化的第二磁性层，通过第二非磁性金属层形成在第二磁性层上的第三磁性层，以及 电流供给层，用于向与第二磁性层的磁化方向相同的方向和与第二磁性层的磁化方向相反的方向中的至少第三磁性层，第二非磁性金属层和第二磁性层施加恒定电流。

    Magnetoresistive head with spin valve configuration
    5.
    发明授权
    Magnetoresistive head with spin valve configuration 失效
    具有自旋阀配置的磁阻头

    公开(公告)号：US5978182A

    公开(公告)日：1999-11-02

    申请号：US971102

    申请日：1997-11-14

    申请人： Hitoshi Kanai ,  Yoshifumi Mizoshita ,  Junichi Kane ,  Kenichi Aoshima

    发明人： Hitoshi Kanai ,  Yoshifumi Mizoshita ,  Junichi Kane ,  Kenichi Aoshima

    IPC分类号： G11B5/00 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  G11B5/3925 ,  G11B5/3967

    摘要： The present invention relates to a magnetoresistive head capable of converting a change in a magnetic field generated by a magnetic recording medium into a change in electric resistivity by utilizing spin valve magnetoresistance effect to read signal information. The magnetoresistive head comprises a first magnetic layer, a second magnetic layer formed on the first magnetic layer through a first nonmagnetic metal layer and magnetized in one direction, a third magnetic layer formed on the second magnetic layer through a second nonmagnetic metal layer, and an electric current supplying layer for applying a constant current to at least the third magnetic layer, the second nonmagnetic metal layer and the second magnetic layer in one of the same direction as and the opposite direction to the direction of magnetization of the second magnetic layer.

    摘要翻译： 本发明涉及一种能够通过利用自旋阀磁电阻效应将磁记录介质产生的磁场变化转换为电阻率变化的磁阻头。 磁阻头包括第一磁性层，通过第一非磁性金属层形成在第一磁性层上并在一个方向上被磁化的第二磁性层，通过第二非磁性金属层形成在第二磁性层上的第三磁性层，以及 电流供给层，用于向与第二磁性层的磁化方向相同的方向和与第二磁性层的磁化方向相反的方向中的至少第三磁性层，第二非磁性金属层和第二磁性层施加恒定电流。

    Apparatus for recognizing spin valve head failure due to pin layer magnetic field offset
    6.
    发明授权
    Apparatus for recognizing spin valve head failure due to pin layer magnetic field offset 失效
    用于识别由于针层磁场偏移引起的自旋阀头故障的装置

    公开(公告)号：US06295175B1

    公开(公告)日：2001-09-25

    申请号：US09218494

    申请日：1998-12-22

    申请人： Isamu Tomita ,  Takao Koshikawa ,  Toshinori Hoshino ,  Tadashi Nakamura ,  Hitoshi Kanai ,  Hiroaki Ueno

    发明人： Isamu Tomita ,  Takao Koshikawa ,  Toshinori Hoshino ,  Tadashi Nakamura ,  Hitoshi Kanai ,  Hiroaki Ueno

    IPC分类号： G11B2736

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/455 ,  G11B5/465 ,  G11B5/54 ,  G11B33/14 ,  G11B2005/0008 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： When a pin layer magnetic field offset judgment unit judges that a magnetic field in a pin layer of a spin valve head through which a sense current flows in the interference direction has been deviated from a normal direction, a recovery processing unit allows a recovery from the abnormality arising from the magnetic field offset. For example, the direction of the sense current is switched from the interference direction to the assist direction, and the sense current larger than that upon the ordinary reading action is allowed to flow so that the temperature of an antiferromagnetic layer exceeds the blocking temperature, whereby the direction of the magnetic field in the pin layer is modified to the normal direction by the action of a magnetic field generated from the sense current. After the modification, the sense current is returned to have its ordinary value in the interference direction.

    摘要翻译： 当针层磁场偏移判断单元判断出感测电流沿着干涉方向流动的自旋阀头的针层中的磁场已经从正常方向偏离时，恢复处理单元允许从 由磁场偏移引起的异常。 例如，感测电流的方向从干涉方向切换到辅助方向，并且允许大于普通读取动作的感测电流流动，使得反铁磁层的温度超过阻塞温度，由此 通过由感应电流产生的磁场的作用，将销层中的磁场的方向修正为法线方向。 修改后，检测电流返回到干涉方向上的普通值。

    Magnetoresistive transducer including CoFeZ soft magnetic layer
    7.
    发明授权
    Magnetoresistive transducer including CoFeZ soft magnetic layer 失效
    磁阻换能器包括CoFeZ软磁层

    公开(公告)号：US6154349A

    公开(公告)日：2000-11-28

    申请号：US783464

    申请日：1997-01-16

    申请人： Hitoshi Kanai ,  Junichi Kane ,  Ken'ichiro Yamada

    发明人： Hitoshi Kanai ,  Junichi Kane ,  Ken'ichiro Yamada

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3268 ,  G11B2005/3996

    摘要： A magnetoresistive transducer includes a multilayer provided with a first soft magnetic layer, a conductive nonmagnetic layer, a second soft magnetic layer, and a biasing magnetic layer giving a magnetization of a predetermined direction to the second soft magnetic layer, in that order of superposition. The first soft magnetic layer is a multilayer superposed structure including a (Co.sub.y Fe.sub.100-y).sub.100-x Z.sub.x alloy layer where Z represents boron and x and y represent atomic fractions (at %), and an alloy layer containing at least Ni and Fe. The (Co.sub.y Fe.sub.100-y).sub.100-x Z.sub.x alloy layer ofthe first soft magnetic layer borders on the nonmagnetic layer and has a face-centered cubic lattice structure with a d spacing smaller than a d spacing of a Co.sub.y Fe.sub.100-y alloy. A pair of electrodes are formed on the multilayer for allowing a sense current to pass through the multilayer.

    摘要翻译： 磁阻换能器包括按照叠加次序设置有第一软磁层，导电非磁性层，第二软磁层和给予第二软磁层预定方向的磁化的偏置磁性层的多层。 第一软磁层是包括（CoyFe100-y）100-xZx合金层，其中Z表示硼，x和y表示原子级分（at％））的多层重叠结构，以及至少含有Ni和Fe的合金层。 第一软磁层的（CoyFe100-y）100-xZx合金层与非磁性层相邻，并且具有d间距小于CoyFe100-y合金的d间距的面心立方晶格结构。 在多层上形成一对电极，以使感测电流通过多层。

    Spin-valve magnetoresistive sensor and magnetic head having such a spin-valve magnetoresistive sensor
    9.
    发明授权
    Spin-valve magnetoresistive sensor and magnetic head having such a spin-valve magnetoresistive sensor 失效
    旋转阀磁阻传感器和具有这种自旋阀磁阻传感器的磁头

    公开(公告)号：US06493196B1

    公开(公告)日：2002-12-10

    申请号：US09476005

    申请日：1999-12-29

    申请人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

    发明人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49034

    摘要： A spin-valve magnetoresistive sensor includes a free layer of a ferromagnetic material, a pinned layer provided on the free layer and a pinning layer of an anti-ferromagnetic material provided on the pinned layer, the anti-ferromagnetic material being an ordered alloy containing manganese. The pinned layer includes a first pinned layer of a ferromagnetic material, a second pinned layer of a ferromagnetic material provided on the first pinned layer and an intermediate layer interposed between the first and second pinned layers such that the first and second pinned layers establish a super-exchange interaction in an anti-parallel manner. The second pinned layer has a magnetic moment smaller than a magnetic moment of the first pinned layer.

    摘要翻译： 自旋阀磁阻传感器包括铁磁材料的自由层，设置在自由层上的钉扎层和设置在钉扎层上的反铁磁材料的钉扎层，反铁磁材料是含有锰的有序合金 。 被钉扎层包括铁磁材料的第一固定层，设置在第一被钉扎层上的铁磁材料的第二钉扎层和介于第一和第二钉扎层之间的中间层，使得第一和第二钉扎层建立超级 以反并行方式交换互动。 第二钉扎层具有小于第一钉扎层的磁矩的磁矩。