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1.发明授权Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices 失效半导体集成电路器件的曝光方法，对准器及其制造方法
公开(公告)号：US5691115A
公开(公告)日：1997-11-25
申请号：US546313
申请日：1995-10-20
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译： 为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动， 在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生 透射光的相移。
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2.发明授权Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices 失效半导体集成电路器件的曝光方法，对准器及其制造方法
公开(公告)号：US6020109A
公开(公告)日：2000-02-01
申请号：US257063
申请日：1999-02-25
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译： 为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动， 在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生 透射光的相移。
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3.发明授权Exposure method, aligner, and method manufacturing semiconductor integrated circuit devices 失效半导体集成电路器件的曝光方法，对准器和方法制造
公开(公告)号：US5932395A
公开(公告)日：1999-08-03
申请号：US92139
申请日：1998-06-05
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译： 为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动， 在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生 透射光的相移。
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4.发明授权
公开(公告)号：US5902705A
公开(公告)日：1999-05-11
申请号：US914086
申请日：1997-08-19
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
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5.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5700601A
公开(公告)日：1997-12-23
申请号：US495836
申请日：1995-06-28
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件打印掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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6.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5895741A
公开(公告)日：1999-04-20
申请号：US906162
申请日：1997-08-05
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件印制掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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公开(公告)号：US5305364A
公开(公告)日：1994-04-19
申请号：US945146
申请日：1992-09-15
申请人： Kozo Mochiji , Hiroaki Oizumi , Shigeo Moriyama , Shinji Okazaki , Tsuneo Terasawa , Masaaki Itou
发明人： Kozo Mochiji , Hiroaki Oizumi , Shigeo Moriyama , Shinji Okazaki , Tsuneo Terasawa , Masaaki Itou
IPC分类号： G03F7/20 , H01L21/027 , G21K5/00
CPC分类号： G03F7/70233 , G03F7/70808 , G03F7/70841 , G03F7/70866 , G03F7/70883 , G03F7/70933
摘要： Reduction projection type X-ray lithography with an exposing beam wavelength of 40-150A, longer than in conventional 1:1 proximity exposure, has a high-vacuum space. This would reduce wafer replacement work efficiency and contaminate optical mirrors with substances released by a resist decomposed during exposure except for separating an optical system chamber and a wafer exposing chamber by a differential pumping section and a thin-film window. Wafer exposure is under atmospheric pressure, improving productivity, accuracy of exposure and longevity of the optical devices.
摘要翻译： 具有40-150A的曝光光束波长的还原投影型X射线光刻比传统的1：1接近曝光更长，具有高真空空间。 这将降低晶片更换工作效率，并且通过在曝光期间分解的抗蚀剂释放的物质污染光学反射镜，除了通过差分泵送部分和薄膜窗口分离光学系统室和晶片曝光室之外。 晶圆曝光在大气压下，提高了生产率，曝光精度和光学元件的寿命。
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公开(公告)号：US5621497A
公开(公告)日：1997-04-15
申请号：US415937
申请日：1995-04-03
申请人： Tsuneo Terasawa , Shinji Okazaki , Minoru Toriumi
发明人： Tsuneo Terasawa , Shinji Okazaki , Minoru Toriumi
CPC分类号： G03F7/70091 , G03F7/2002 , G03F7/2022 , G03F7/701 , G03F7/70216 , G03F7/70233 , G03F7/70408 , G03F7/70458
摘要： Disclosed is a pattern forming method including the steps of preparing second grating stripes disposed near a reticle having a mask pattern to be projected, modulating the mask pattern by emission of a light, and demodulating the modulated mask pattern by first grating stripes formed within a photosensitive film made of a material capable of reversibly inducing photochemical reaction, thereby forming the modulated image of the mask pattern within a resist film disposed under the photosensitive film. With this method, various kinds of fine patterns each being smaller than the resolution limit of a projection exposure tool used are formed.
摘要翻译： 公开了一种图案形成方法，包括以下步骤：制备设置在具有要投射的掩模图案的掩模版附近的第二光栅条，通过发射光来调制掩模图案，以及通过在感光体内形成的第一格栅条来解调调制掩模图案 由能够可逆地诱导光化学反应的材料制成的膜，从而在设置在感光膜下方的抗蚀剂膜内形成掩模图案的调制图像。 利用这种方法，形成各种精细图案，每种精细图案都小于使用的投影曝光工具的分辨率极限。
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公开(公告)号：US4798470A
公开(公告)日：1989-01-17
申请号：US927939
申请日：1986-11-07
CPC分类号： G03F9/7026 , G03F9/7076 , G03F9/7084
摘要： A pattern printing method includes a step of printing a pattern on a wafer on the basis of a target mark provided on the surface of the wafer which is opposite to the surface thereof on which the pattern is to be printed. Also disclosed is a pattern printing apparatus which comprises detecting means for detecting a target mark provided on the surface of a wafer which is opposite to the surface thereof on which a pattern is to be printed, and pattern printing means for printing the pattern on the pattern printing surface of the wafer on the basis of mark position data obtained by the detecting means.
摘要翻译： 图案印刷方法包括基于设置在与要印刷图案的表面相对的晶片表面上的目标标记在晶片上印刷图案的步骤。 还公开了一种图案打印装置，其包括检测装置，用于检测设置在与其上要印刷图案的表面相对的晶片表面上的目标标记，以及用于在图案上印刷图案的图案印刷装置 基于由检测装置获得的标记位置数据，晶片的印刷表面。
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公开(公告)号：US5757409A
公开(公告)日：1998-05-26
申请号：US644089
申请日：1996-05-10
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.
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