Micro-actuation element provided with torsion bars
    2.
    发明申请
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号:US20050200986A1

    公开(公告)日:2005-09-15

    申请号:US11101519

    申请日:2005-04-08

    IPC分类号: G02B26/08 H02N1/00

    摘要: The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译: 微致动元件(X 1)包括可移动单元(111),框架(112)和用于连接它们的耦合器(113),其中单元,框架和耦合器一体形成在具有 由导电层(110a-110c),例如芯导电层(110b)和介于导电层(110a-110c)之间的绝缘层(110d,110e))组成的多层结构, 。 可移动单元(111)包括源于芯导电层(110b)的第一结构。 框架(112)包括源于芯导电层(110b)的第二结构。 耦合器(113)包括多个电分离的扭力杆(113a,113b),其产生在芯导电层(110b)中并连续地连接到第一结构和第二结构。

    Micro-actuation element provided with torsion bars
    5.
    发明授权
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号:US07751108B2

    公开(公告)日:2010-07-06

    申请号:US11987899

    申请日:2007-12-05

    IPC分类号: G02B26/08 H02N1/00

    摘要: The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译: 微型致动元件(X1)包括可移动单元(111),框架(112)和用于连接它们的联接器(113),其中单元,框架和耦合器一体地形成在具有多个 由导电层(110a-110c)(例如芯导电层(110b))和介于导电层(110a-110c)之间的绝缘层(110d,110e)组成。 可移动单元(111)包括源于芯导电层(110b)的第一结构。 框架(112)包括源于芯导电层(110b)的第二结构。 耦合器(113)包括多个电分离的扭杆(113a,113b),其产生在芯导电层(110b)中并且连续地连接到第一结构和第二结构。

    Micro-actuation element provided with torsion bars
    6.
    发明申请
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号:US20080285108A1

    公开(公告)日:2008-11-20

    申请号:US11987899

    申请日:2007-12-05

    IPC分类号: G02B26/08 H02N1/00

    摘要: The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译: 微致动元件(X 1)包括可移动单元(111),框架(112)和用于连接它们的耦合器(113),其中单元,框架和耦合器一体形成在具有 由导电层(110a-110c),例如芯导电层(110b)和介于导电层(110a-110c)之间的绝缘层(110d,110e))组成的多层结构, 。 可移动单元(111)包括源于芯导电层(110b)的第一结构。 框架(112)包括源于芯导电层(110b)的第二结构。 耦合器(113)包括多个电分离的扭力杆(113a,113b),其产生在芯导电层(110b)中并连续地连接到第一结构和第二结构。